IRFZ48NSTRLPBF vs IRF3710STRLPBF 比較

詳細並排比較 IRFZ48NSTRLPBF 由 Infineon 與 IRF3710STRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFZ48NSTRLPBF IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF ✓ 啟用中

規格比較

參數 IRFZ48NSTRLPBF IRF3710STRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel Power MOSFET N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC 86.7 nC
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
工作接面溫度 -55C to +175C —
封裝 D2PAK (TO-263) Surface Mount D2PAK (TO-263), surface mount
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
RoHS 狀態 Compliant Compliant (Pb-free)
Technology Family HEXFET advanced process technology —
Technology — HEXFET / IR MOSFET (planar)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc=25 C) — 57 A
On-Resistance RDS(on) max — 23 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc=25 C) — 200 W
工作溫度範圍 — -55 C to +175 C
Lead-Free — Yes
Tape & Reel Orientation — TRL (left)

資料表與資源

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