IRLB4132PBF vs IRFB4020PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLB4132PBF disebabkan oleh Infineon dan IRFB4020PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLB4132PBF IRFB4020PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Jenis Transistor N-Channel MOSFET (HEXFET) —
Drain-Source Voltage (VDS) 30 V 200 V
Continuous Drain Current (ID, Tc=25C) 78 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD, Tc=25C) 140 W —
On-Resistance (RDS(on), VGS=10V) 3.5 mOhm (typical) —
On-Resistance (RDS(on), VGS=4.5V) [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th), typical) 1.0 V to 2.5 V —
Gate Charge (Qg, typical) [DATA_NEEDED: total gate charge] —
Maximum Junction Temperature 175 C —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan / Case TO-220AB (through-hole, 3 leads) —
Jenis Pemasangan Through Hole Through Hole
Lead-Free / RoHS Yes (Pb-free PBF suffix) —
AEC-Q101 Automotive Qualification Not qualified (industrial/commercial) —
FET Type — N-Channel
Technology — IR MOSFET (HEXFET)
Continuous Drain Current (ID) at TC — 18 A
Power Dissipation (PD) at TC — 100 W
RDS(on) Maximum — 100 mOhm
Gate-Source Voltage (VGS) Maximum — 20 V
Thermal Resistance, Junction-to-Case (RthJC) — 1.43 C/W
Suhu Hubungan Operasi — 175 C (max)
Kemasan — TO-220AB (through-hole)
Kiraan Pin — 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) — Yes
Market Qualification — Consumer
Recommended Use — Class-D audio amplifier and high-efficiency switching applications

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