IRLR3410TRPBF vs IRLR2705TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3410TRPBF disebabkan oleh Infineon dan IRLR2705TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR3410TRPBF IRLR2705TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (IR MOSFET generation 5)
Drain-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 17 A —
Power Dissipation (Pd) at Tc=25C 79 W —
On-Resistance RDS(on) max 105 mOhm —
Gate Threshold Voltage Vgs(th) Logic-level (drive ~4.5V) —
Total Gate Charge (Qg) 22.7 nC 16.7 nC
Kemasan TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (junction) —
Lead-Free / RoHS Yes (PBF suffix) Yes (Pb-free, RoHS compliant)
Aras MSL 1 (unlimited floor life at <30C/85% RH) [DATA_NEEDED: MSL rating per JEDEC J-STD-020]
Drain Tab Connection Tab electrically tied to Drain —
Polarity N-Channel enhancement mode —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 28 A
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C with 1in2 copper]
RDS(on) Max at VGS=10V — 40 mOhm
RDS(on) Max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate-to-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute max, +/-V]
Gate Threshold Voltage (VGS(th)) — Logic-Level (compatible with 4V drive)
Power Dissipation (PD) at Tc=25C — 68 W
Power Dissipation (PD) at TA=25C — [DATA_NEEDED: PD at TA=25C with 1in2 copper]
Suhu Hubungan Operasi — -55C to +175C
Avalanche Rated — Yes

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