ISC019N08NM7ATMA1 vs ISC015N06NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC019N08NM7ATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC019N08NM7ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Trench MOSFET (OptiMOS 7) | Trench MOSFET (OptiMOS 5) |
| Drain-to-Source Voltage (VDS) | 80 V | 60 V |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Drain Current (ID), TC=25°C | 209 A | — |
| Drain Current (ID), TA=25°C | 26 A | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.9 mΩ | — |
| Power Dissipation (PD), TC=25°C | 188 W | — |
| Power Dissipation (PD), TA=25°C | 3 W (6 cm² FR4) | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge QG | [DATA_NEEDED: QG] | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | — | 1 |