ISC056N08NM6ATMA1 vs ISC011N04NM7VATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC056N08NM6ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC056N08NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC056N08NM6ATMA1 | — |
| Series | OptiMOS 6 | — |
| Technology | N-Channel Trench MOSFET (OptiMOS 6) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 15.3 A | 38 A |
| Continuous Drain Current (ID) at TC=25°C | 88 A | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 100 W | — |
| Kemasan | PG-TDSON-8 FL (TDSON-8 Flat Lead) | PG-TDSON-8 (source-down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Gambaran Suhu Operasi | -55°C to +175°C | -55 °C to +175 °C (TJ) |
| Aras MSL | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |