ISC056N08NM6ATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of ISC056N08NM6ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC056N08NM6ATMA1

ISC056N08NM6ATMA1 - 80V N-Ch OptiMOS 6 MOSFET | Infineon

ISC056N08NM6ATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter ISC056N08NM6ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC056N08NM6ATMA1 β€”
Series OptiMOS 6 β€”
Technology N-Channel Trench MOSFET (OptiMOS 6) Trench MOSFET, silicon
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) at TA=25Β°C 15.3 A 38 A
Continuous Drain Current (ID) at TC=25Β°C 88 A β€”
Power Dissipation (PD) at TA=25Β°C 3 W β€”
Power Dissipation (PD) at TC=25Β°C 100 W β€”
Package PG-TDSON-8 FL (TDSON-8 Flat Lead) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Operating Temperature Range -55Β°C to +175Β°C -55 Β°C to +175 Β°C (TJ)
MSL Level 1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
RoHS Status Compliant β€”
Product Family β€” OptiMOS 7 Power-Transistor
FET Type β€” N-Channel
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)

Datasheets & Resources

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