ISC080N10NM6ATMA1 vs BSC060N10NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC080N10NM6ATMA1 disebabkan oleh Infineon dan BSC060N10NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC080N10NM6ATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | — |
| Kemasan | PG-TDSON-8 FL (TDSON EP) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55°C to +175°C (TJ max, per datasheet) | — |
| Aras MSL | 1 (per JEDEC J-STD-020, per datasheet) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | [DATA_NEEDED: halogen status] |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Part Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Ta) | — | 14.9 A |
| Continuous Drain Current (ID, Tc) | — | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6 mOhm |
| Power Dissipation (PD, Tc=25C) | — | 125 W |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 3.5 V |
| Suhu Hubungan Operasi | — | -55 C to +150 C |
| Technology | — | OptiMOS 3 (Trench MOSFET) |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS value] |