ISZ019N03L5SATMA1 vs BSC028N06NSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ019N03L5SATMA1 disebabkan oleh Infineon dan BSC028N06NSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISZ019N03L5SATMA1 BSC028N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 (<= 40V) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at TA=25C 22 A 24 A
Continuous Drain Current (ID) at TC=25C 40 A 100 A
RDS(on) at VGS=10V 1.9 mΩ (typical, ID=20A) —
Gate Threshold Voltage (VGS(th)) 2 V (typical) —
Gate-Source Voltage Rating (VGS) ±20 V —
Total Gate Charge (Qg) 44 nC at VGS=10V —
Input Capacitance (Ciss) 2800 pF at VDS=15V —
Kemasan PG-TSDSON-8-FL (5x6 mm) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (TJ max) —
Aras MSL 1 (per JEDEC J-STD-020) 1
RoHS / REACH Compliant —
Avalanche Rated Yes —
RG-tested 100% —
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Technology — MOSFET N-Channel (OptiMOS 5)
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
Suhu Hubungan Operasi — -55C to +175C
Status RoHS — Compliant
Boson Bebas — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

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