ISZ028N03LF2SATMA1 vs IQE020N04LM6CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ028N03LF2SATMA1 disebabkan oleh Infineon dan IQE020N04LM6CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ AktifInfineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISZ028N03LF2SATMA1 | IQE020N04LM6CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 6 trench |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | — |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Kemasan | PG-TSDSON-8 FL (FL = flat lead) | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction, typical) | -55 °C to +150 °C (junction, per Infineon MOSFET convention) |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current at TA=25°C | — | 25 A |
| Continuous Drain Current at TC=25°C | — | 166 A |
| Maximum RDS(on) | — | 2.0 mΩ (per IQE part-number decode) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 107 W |
| Kiraan Pin | — | 9 |
| Lead-Free | — | Yes |