ISZ028N03LF2SATMA1 vs ISC015N06NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ028N03LF2SATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISZ028N03LF2SATMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology StrongIRFET 2 (Trench MOSFET) Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Tc 128 A —
Continuous Drain Current (ID) at Ta 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (VGS(th)) 2.35 V —
On-Resistance (RDS(on)) max 2.8 mΩ —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Kemasan PG-TSDSON-8 FL (FL = flat lead) PG-TDSON-8 (PQFN 5x6) Drain-Down
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (junction, typical) -55 C to +175 C
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) —
Status RoHS Compliant Compliant
Aras MSL 1 —
Avalanche Energy Rated Yes (single-pulse) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

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