ISZ028N03LF2SATMA1 vs ISC015N06NM5ATMA1 比較
詳細並排比較 ISZ028N03LF2SATMA1 由 Infineon 與 ISC015N06NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ 啟用中規格比較
| 參數 | ISZ028N03LF2SATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET 2 (Trench MOSFET) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | — |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| 封裝 | PG-TSDSON-8 FL (FL = flat lead) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C (junction, typical) | -55 C to +175 C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| MSL (Moisture Sensitivity Level) | — | 1 |