ISZ033N03LF2SATMA1 vs ISC028N03LF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ033N03LF2SATMA1 disebabkan oleh Infineon dan ISC028N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISZ033N03LF2SATMA1 ISC028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 20 A 24 A
Continuous Drain Current (ID) at TC=25C 109 A 128 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TA=25C 3 W —
Power Dissipation (PD) at TC=25C 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Suhu Hubungan Operasi -55 C to +175 C -55 C to +175 C
Kemasan PG-TSDSON-8 FL (8-pin) PG-TDSON-8-62 (5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
RoHS / Lead-Free — Yes (RoHS compliant)
Aras MSL — 1 (per JEDEC J-STD-020)

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