K4A4G165WG-BCWE vs MT41K64M16TW-107 AUT:J Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WG-BCWE disebabkan oleh Samsung Electronics dan MT41K64M16TW-107 AUT:J disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ AktifMicron Technology
MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
MT41K64M16TW-107 AUT:J ✓ AktifPengandingan Spesifikasi
| Parametr | K4A4G165WG-BCWE | MT41K64M16TW-107 AUT:J |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $16.90 | — |
| Jenis Ingatan | DDR4 SDRAM (volatile DRAM) | SDRAM - DDR3L |
| Saiz Ingatan | 4 Gbit | 1 Gbit |
| Memory Organization | 256M x 16 | — |
| Antaramuka | Parallel | Parallel |
| Kadar Data | 3200 Mbps | 1866 MT/s (DDR3L-1866) |
| Access Time | 19 ns | 20 ns |
| Tegangan Pemberi Arus | 1.2 V | 1.35 V (DDR3L), 1.5 V compatible |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Kemasan | FBGA-96 | 96-FBGA (8 x 14 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| Status RoHS | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | 933 MHz |
| Latensi CAS | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS latency] |
| Refresh Rate | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh rate] |
| Organisasi | — | 64M x 16 |
| Temperature Grade | — | AUT (automotive) |
| Termination | — | On-Die Termination (ODT) |
| Packaging | — | Tray (T/R per listing) |