K4A4G165WG-BCWE vs MT41K64M16TW-107 AUT:J 比較
詳細並排比較 K4A4G165WG-BCWE 由 Samsung Electronics 與 MT41K64M16TW-107 AUT:J 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
MT41K64M16TW-107 AUT:J ✓ 啟用中規格比較
| 參數 | K4A4G165WG-BCWE | MT41K64M16TW-107 AUT:J |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $16.90 | — |
| 記憶體類型 | DDR4 SDRAM (volatile DRAM) | SDRAM - DDR3L |
| 記憶體容量 | 4 Gbit | 1 Gbit |
| Memory Organization | 256M x 16 | — |
| 介面 | Parallel | Parallel |
| 資料速率 | 3200 Mbps | 1866 MT/s (DDR3L-1866) |
| Access Time | 19 ns | 20 ns |
| 供應電壓 | 1.2 V | 1.35 V (DDR3L), 1.5 V compatible |
| 工作溫度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封裝 | FBGA-96 | 96-FBGA (8 x 14 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| RoHS 狀態 | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | 933 MHz |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS latency] |
| Refresh Rate | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh rate] |
| 組織 | — | 64M x 16 |
| Temperature Grade | — | AUT (automotive) |
| Termination | — | On-Die Termination (ODT) |
| Packaging | — | Tray (T/R per listing) |