K4A8G085WC-BCTD vs MT40A1G8SA-062E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCTD disebabkan oleh Samsung Electronics dan MT40A1G8SA-062E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | K4A8G085WC-BCTD | MT40A1G8SA-062E |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Masa Terakhir Dibeli | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 2666 Mbps (PC4-2133) | 3200 MT/s (DDR4-3200) |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| Kemasan | 78-ball FBGA (78FBGA) | 78-ball FBGA (7.5 x 11 mm) |
| Ball Pitch | 0.8 mm | — |
| Suhu Operasi | 0C to +95C | 0C to +95C (CT range; IT: -40C to +95C) |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | BL8, BC4 (burst chop) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Jenis Antaramuka | Synchronous, parallel | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Clock Frequency | — | 1.6 GHz |
| Access Time (CAS Latency) | — | CL22 at 3200 MT/s |
| Row Access Time | — | 19 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV, +250 mV |
| Internal Banks | — | 16 banks (4 bank groups x 4 banks) |
| Refresh | — | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| I/O Type | — | 1.2 V pseudo open-drain |
| Ciri-ciri | — | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |