K4AAG085WM-BCRC vs K4AAG085WA-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG085WM-BCRC disebabkan oleh Samsung Electronics dan K4AAG085WA-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG085WM-BCRC | K4AAG085WA-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | [DATA_NEEDED: exact density in Gb] | 16 Gbit (2 GB) |
| Organisasi | x8 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Max Data Rate | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) | — |
| Antaramuka | SSTL12 | DDR4 parallel, JEDEC DDR4 ballout |
| Kemasan | 78-ball FBGA | 78-ball FBGA (78FBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Architecture | Bank-group DDR4 | — |
| Termination | On-Die Termination (ODT) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Latensi CAS | [DATA_NEEDED: CL of -BCRC speed grade] | — |
| Clock | Differential clock CK/CK# | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Kadar Data | — | 2666 Mbps |
| Tegangan Pemberi Arus | — | 1.2 V |
| Speed Grade | — | DDR4-2666 (-BCTD) |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Burst Length | — | BL8 (DDR4 standard) |
| Application Domain | — | Computing, networking, industrial memory |
| Manufacturing Standard | — | JEDEC DDR4 SDRAM |
| Lead Time / Stock | — | [DATA_NEEDED: current stock status] |