K4AAG085WM-BCRC vs K4AAG085WA-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG085WM-BCRC sa pamamagitan ng Samsung Electronics at K4AAG085WA-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG085WA-BCTD - 16Gb DDR4 2666Mbps SDRAM | Samsung
K4AAG085WA-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG085WM-BCRC | K4AAG085WA-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | [DATA_NEEDED: exact density in Gb] | 16 Gbit (2 GB) |
| Organisasyon | x8 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Max Data Rate | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) | — |
| Interface | SSTL12 | DDR4 parallel, JEDEC DDR4 ballout |
| Packhaging | 78-ball FBGA | 78-ball FBGA (78FBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Architecture | Bank-group DDR4 | — |
| Termination | On-Die Termination (ODT) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Latensya ng CAS | [DATA_NEEDED: CL of -BCRC speed grade] | — |
| Clock | Differential clock CK/CK# | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Rate ng Data | — | 2666 Mbps |
| Volte ng Pagbibigay | — | 1.2 V |
| Speed Grade | — | DDR4-2666 (-BCTD) |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Burst Length | — | BL8 (DDR4 standard) |
| Application Domain | — | Computing, networking, industrial memory |
| Manufacturing Standard | — | JEDEC DDR4 SDRAM |
| Lead Time / Stock | — | [DATA_NEEDED: current stock status] |