K4B4G1646D-BMK0 vs K4B4G1646D-BMH9 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BMK0 disebabkan oleh Samsung Electronics dan K4B4G1646D-BMH9 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BMK0 | K4B4G1646D-BMH9 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) | — |
| Voltage | 1.35 V | — |
| Suhu Operasi | -40°C to 95°C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 96FBGA (TFBGA) | 96-ball FBGA (9x13mm) |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Die Version | D-die | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | Yes |
| RoHS Compliant | Yes | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Number of Functions | 1 | — |
| Kadar Data | 1600 Mbps | 2133 Mb/s per pin |
| Number of Banks | — | 8 |
| Supply Voltage (VDD) | — | 1.35V |
| Supply Voltage (VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Latensi CAS | — | Programmable |
| Burst Length | — | 8 and 4 |
| Status RoHS | — | Compliant |