K4RHE086VB-BCWM vs K4RAH086VE-BCWM Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RHE086VB-BCWM disebabkan oleh Samsung Electronics dan K4RAH086VE-BCWM disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4RHE086VB-BCWM K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM ✓ Aktif
Samsung Electronics
K4RAH086VE-BCWM K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics

K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics

K4RAH086VE-BCWM ✓ Aktif

Pengandingan Spesifikasi

Parametr K4RHE086VB-BCWM K4RAH086VE-BCWM
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $7.60
Jenis Ingatan DDR5 SDRAM DDR5 SDRAM
Density 24 Gb 16 Gb
Organisasi 2G x 8 2G x 8
Kadar Data 5600 Mbps 5600 Mbps
Tegangan Pemberi Arus 1.1 V —
Kemasan 82 FBGA 82-ball FBGA
Jenis Pemasangan Surface Mount Surface Mount
Antaramuka DDR5 (JEDEC) —
Configuration x8 —
Application Segment Server / Data Center / Premium PC —
Manufacturer Samsung Semiconductor Samsung Electronics
Status RoHS unknown [DATA_NEEDED: RoHS status]
Suhu Operasi [DATA_NEEDED: operating temperature range] 0C to +85C
Access Time / CAS Latency [DATA_NEEDED: CAS latency] —
On-Die ECC [DATA_NEEDED: on-die ECC support] —
Package Height [DATA_NEEDED: package height] —
Supply Voltage (VDD) — 1.1 V
Generation — DDR5
Bank Groups — [DATA_NEEDED: bank group count]
Latensi CAS — [DATA_NEEDED: CL at 5600 Mbps]
VDDQ Voltage — [DATA_NEEDED: VDDQ value]
Refresh — [DATA_NEEDED: refresh rate]
Status Lingkungan Hidup — Mass Production

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