K6X0808C1D-GF55000 vs K6X0808C1D-GF55T Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-GF55000 disebabkan oleh Samsung Electronics dan K6X0808C1D-GF55T disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ AktifSamsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-GF55000 | K6X0808C1D-GF55T |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electro-Mechanics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SRAM - Asynchronous | SRAM - Asynchronous |
| Saiz Ingatan | 256 Kbit | 256 Kbit |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| Antaramuka | Parallel | Parallel |
| Tegangan Pemberi Arus | 5 V | 5.0 V |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | 28-SOP | 28-SOP (450 mil) |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Write Cycle Time | [DATA_NEEDED: write cycle time] | — |
| Jenis Output | Three-state, common data I/O | — |
| Control Signals | CE, OE, WE (active low) | CE, OE, WE |
| Memory Format | Volatile, no refresh required | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Technology | Low-power CMOS | — |
| Process Technology | — | Full CMOS |
| Active Current | — | [DATA_NEEDED: active current] |
| Data Retention Voltage | — | Low data retention voltage supported (per datasheet) |
| Address Bus Width | — | 15 bit |
| Lebar Bus Data | — | 8 bit |
| Packaging | — | Tape & Reel (T suffix) |