M29F200FT55M3F2 vs M29F200FB55N3F2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F200FT55M3F2 disebabkan oleh Micron Technology dan M29F200FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ Aktif
Micron Technology
M29F200FB55N3F2 M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 ✓ Aktif

Pengandingan Spesifikasi

Parametr M29F200FT55M3F2 M29F200FB55N3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan Parallel NOR Flash Parallel NOR Flash
Density 2 Mbit (2097 kbits) 2 Mbit (2097 kbits)
Organisasi 256K x 8 / 128K x 16 256K x 8 bit / 128K x 16 bit
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V 5 V
Boot Block Architecture Top Boot Block Bottom Boot Block (FB)
Programming Interface Embedded program/erase controller, byte or word —
Suhu Operasi -40C to +125C -40C to +125C
Automotive Qualification Yes —
Kemasan 44-pin SO (TSOP) 48-TSOP I
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (T/R) Tape & Reel (TR)
Number of Words (x16 mode) 128 K —
Bits per Word (x16 mode) 16 bits —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Number of Words — 128 K (x16 mode)
Bits per Word — 16 bits
Programming — Embedded byte/word program algorithm
Erase — Embedded block erase controller
Antaramuka — Parallel
Endurance — [DATA_NEEDED: program/erase cycles]

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