M29F400FT55N3F2 vs M29F800FT55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F400FT55N3F2 disebabkan oleh Micron Technology dan M29F800FT55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | M29F400FT55N3F2 | M29F800FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (SLC) | NOR Flash, Parallel |
| Saiz Ingatan | 4 Mbit | 8 Mbit |
| Organisasi | 256K x 16 | 1M x 8 bit / 512K x 16 bit |
| Antaramuka | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemberi Arus | 5 V | 5 V (single supply) |
| Block Architecture | Top boot block | — |
| Kemasan | 44-SO (SOP-44) | 48-pin TSOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | 5.0 V VCC (no 12 V VPP required) |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Suhu Operasi | [DATA_NEEDED: min operating temperature] | [DATA_NEEDED: operating temperature range] |
| Boot Block Architecture | — | Top boot block (T) |
| Packaging | — | Tape & Reel (T/R) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |