M29W128GH70N3E vs M29W128GH70ZA3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W128GH70N3E disebabkan oleh Micron Technology dan M29W128GH70ZA3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W128GH70ZA3E - 128Mbit Parallel NOR Flash, 70ns | Micron
M29W128GH70ZA3E ✓ AktifPengandingan Spesifikasi
| Parametr | M29W128GH70N3E | M29W128GH70ZA3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash |
| Saiz Ingatan | 128 Mbit (16 MB) | 128 Mbit |
| Organisasi | 8M x 16 / 16M x 8 | 8M x 16 |
| Antaramuka | Parallel (asynchronous) | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | [DATA_NEEDED: supply voltage range] |
| Suhu Operasi | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Temperature Grade | Automotive | — |
| Kemasan | 56-TSOP | 64-TBGA (10x13 mm) |
| Number of Terminals | 56 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lebar Bus Data | 16 bit (byte/word selectable) | — |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Technology | — | SLC NOR |
| Boot Block Architecture | — | Bottom boot (GH suffix) |
| Program/Erase Voltage | — | [DATA_NEEDED: program/erase voltage] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| CFI Compliant | — | [DATA_NEEDED: CFI compliance] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |