M29W800FT70N3E vs M29W128GL70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W800FT70N3E disebabkan oleh Micron Technology dan M29W128GL70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W800FT70N3E | M29W128GL70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 8 Mbit | 128 Mbit |
| Organisasi | 1M x 8 / 512K x 16 | 16M x8 / 8M x16 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Programming / Erase Supply | Single supply at VCC (2.7 V to 3.6 V) | — |
| Boot Block Location | Top boot block (FT variant) | — |
| Bus Width | 8-bit or 16-bit (BYTE pin selectable) | — |
| Antaramuka | Parallel, address/data bus | Parallel |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Kemasan | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) | 56-pin TSOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Block Organization | [DATA_NEEDED: block size/organization] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Tegangan Pemberi Arus | — | 2.7 V to 3.6 V (3V/3.3V class) |
| Boot Block Configuration | — | Bottom boot (GL suffix) |
| Packaging | — | Tray |
| Automotive Qualification | — | Automotive grade ordering code (N3E) |
| Bus Width Mode | — | Software-selectable x8/x16 (BYTE# pin) |