MRF6S9130HSR3 vs MRF6S9160HSR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF6S9130HSR3 disebabkan oleh NXP Semiconductors dan MRF6S9160HSR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ AktifNXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | MRF6S9130HSR3 | MRF6S9160HSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Masa Terakhir Dibeli |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Status | Active | — |
| Jenis Transistor | Lateral N-Channel RF Power MOSFET (LDMOS) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Frequency | 880 MHz | 865 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Max | 68 V | — |
| Drain Current (Id) Max | [DATA_NEEDED: maximum pulsed drain current] | — |
| Typical Quiescent Current (Idq) | 950 mA | — |
| Drain-Source On Resistance (Rds(on)) | [DATA_NEEDED: Rds(on) value] | — |
| Output Power (Pout) Avg | 27 W (N-CDMA single-carrier) | — |
| Power Gain (Gps) | 19.2 dB typical | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency figure] | 31% typical at 880 MHz |
| Supply Voltage (Vdd) Recommended | 28 V | — |
| Kemasan / Case | NI-780S (CASE 465-06, Style 1) ceramic flange | — |
| Jenis Pemasangan | Chassis / flange mount with screw-down | Flange / Chassis Mount with screw holes |
| Gambaran Suhu Operasi | [DATA_NEEDED: Tj operating range] | — |
| Storage Temperature Range | [DATA_NEEDED: Tstg range] | — |
| Kiraan Pin | 3 | — |
| Style | Style 1 | — |
| Technology | LDMOS (laterally diffused MOS) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Packing | Tape & Reel (HSR3 suffix) | — |
| Primary Applications | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers | — |
| Application | — | RF Power Amplifier |
| Test Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| Power Gain | — | 20.9 dB typical at 880 MHz |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Kemasan | — | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |