MT40A512M16TB-062E:J vs MT40A512M16JY-07EAIT:B Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16TB-062E:J disebabkan oleh Micron Technology dan MT40A512M16JY-07EAIT:B disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ AktifMicron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ AktifPengandingan Spesifikasi
| Parametr | MT40A512M16TB-062E:J | MT40A512M16JY-07EAIT:B |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SDRAM - DDR4 | DDR4 SDRAM |
| Saiz Ingatan | 8Gbit (512M x 16) | 8 Gbit |
| Clock Frequency | 1.6 GHz | 1.33 GHz |
| Access Time | 19 ns | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| I/O Type | 1.2V pseudo open-drain | 1.2V pseudo open-drain |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) | — |
| Prefetch Architecture | 8n-bit | — |
| Kemasan | 96-FBGA (7.5x13.5 mm) | 96-FBGA (8x14) |
| Gambaran Suhu Operasi | 0°C to 95°C | -40°C to +105°C (AIT grade) |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Jenis Pemasangan | Surface Mount | — |
| Organisasi | — | 512M x 16 |
| Kadar Data | — | 2666 MT/s |
| VPP Voltage | — | 2.5V, -125mV, +250mV |
| Antaramuka | — | Parallel |
| VREFDQ | — | On-die, internal, adjustable |
| AEC-Q100 | — | Qualified (AIT suffix) |
| RoHS | — | Compliant |