MW7IC2040NBR1 vs MD7IC2050NR1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MW7IC2040NBR1 disebabkan oleh NXP Semiconductors dan MD7IC2050NR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
MW7IC2040NBR1 ✓ AktifPengandingan Spesifikasi
| Parametr | MW7IC2040NBR1 | MD7IC2050NR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Status Lingkungan Hidup | Aktif | Aktif |
| RF Type | General Purpose | — |
| Frequency Range | 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) | — |
| Test Frequency | 1990 MHz | — |
| Gain | 23.5 dB (typ at 1990 MHz) | — |
| Output Power (P1dB/avg) | 4 W (family rating) | — |
| Tegangan Pemberi Arus | 24 V to 32 V | — |
| Quiescent Supply Current | 75 mA (typ) | 230 mA |
| Kemasan / Case | TO-272-16 Variant, Flat Leads | TO-270-14 Variant, Flat Leads (TO-270 WB-14) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | RF LDMOS (later-generation, on-chip matching) | — |
| Number of Functions | 1 (multi-stage integrated PA) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Modulation Support | W-CDMA, GSM, EDGE, CW | — |
| Status RoHS | Compliant (per ETEI / distributor data) | [DATA_NEEDED: current RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MD7IC2050NR1 |
| Device Type | — | RF LDMOS Integrated Power Amplifier |
| RF Type / Modulation | — | W-CDMA / 3GPP |
| Frequency Range (datasheet typical) | — | 1.88 GHz to 2.1 GHz |
| Frequency Range (broadband match) | — | 1.75 GHz to 2.05 GHz |
| Output Power (Average, W-CDMA) | — | 10 W |
| Supply Voltage (Vdd) | — | 28 V |
| Supply Voltage Range | — | 26 V to 32 V |
| Power Gain (Gp) | — | 30.5 dB at 2.14 GHz |
| Architecture | — | Two-stage, on-chip matched |
| Maximum Input Power (CW) | — | 28 dBm |
| Packaging | — | Tape & Reel |