MW7IC2040NBR1 vs MD7IC2050NR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MW7IC2040NBR1 tarafından NXP Semiconductors ve MD7IC2050NR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
MW7IC2040NBR1 ✓ AktifÖzellik Karşılaştırması
| Parametre | MW7IC2040NBR1 | MD7IC2050NR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| RF Type | General Purpose | — |
| Frequency Range | 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) | — |
| Test Frequency | 1990 MHz | — |
| Gain | 23.5 dB (typ at 1990 MHz) | — |
| Output Power (P1dB/avg) | 4 W (family rating) | — |
| Besleme Gerilimi | 24 V to 32 V | — |
| Quiescent Supply Current | 75 mA (typ) | 230 mA |
| Paket / Kas | TO-272-16 Variant, Flat Leads | TO-270-14 Variant, Flat Leads (TO-270 WB-14) |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | RF LDMOS (later-generation, on-chip matching) | — |
| Number of Functions | 1 (multi-stage integrated PA) | — |
| İşletim Sıcaklığı | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Modulation Support | W-CDMA, GSM, EDGE, CW | — |
| RoHS Durumu | Compliant (per ETEI / distributor data) | [DATA_NEEDED: current RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MD7IC2050NR1 |
| Device Type | — | RF LDMOS Integrated Power Amplifier |
| RF Type / Modulation | — | W-CDMA / 3GPP |
| Frequency Range (datasheet typical) | — | 1.88 GHz to 2.1 GHz |
| Frequency Range (broadband match) | — | 1.75 GHz to 2.05 GHz |
| Output Power (Average, W-CDMA) | — | 10 W |
| Supply Voltage (Vdd) | — | 28 V |
| Supply Voltage Range | — | 26 V to 32 V |
| Power Gain (Gp) | — | 30.5 dB at 2.14 GHz |
| Architecture | — | Two-stage, on-chip matched |
| Maximum Input Power (CW) | — | 28 dBm |
| Packaging | — | Tape & Reel |