MW7IC2750GNR1 vs MW7IC2040GNR1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MW7IC2750GNR1 disebabkan oleh NXP Semiconductors dan MW7IC2040GNR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MW7IC2750GNR1 - 8W 2.3-2.7GHz WiMAX RF Power Amplifier | NXP
MW7IC2750GNR1 ✓ AktifPengandingan Spesifikasi
| Parametr | MW7IC2750GNR1 | MW7IC2040GNR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale/Motorola) |
| Part Series | MW7IC2750N | — |
| RF Type | WiMAX / Broadband Wireless Access | General Purpose / Cellular Base Station PA |
| Frequency Range | 2300 MHz to 2700 MHz | 1805 MHz to 1990 MHz |
| Supply Voltage (VDD) | 28 V (rated 26 V to 32 V operation) | — |
| Quiescent Supply Current | 550 mA (typical) | — |
| Output Power (Pout) | 8 W average (per datasheet title) | — |
| Power Gain | 26 dB (typical) | — |
| Characteristic Impedance | 50 ohm | — |
| Tetstruktur | Multi-stage integrated (on-chip input and output matching) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | LDMOS (Laterally Diffused MOS) |
| Drain-Source Breakdown Rating | 65 V (per package marking referenced in distributor listings) | — |
| Kemasan / Case | TO-270 WB-14 Gull Wing, 14-pin | TO-270-16 Variant, Gull Wing (TO-270 WBL-16) |
| Jenis Pemasangan | Surface Mount (gull-wing leads with back-side flange) | Surface Mount (Gull Wing leads) |
| Packaging | Tape & Reel (TR) | Tape & Reel |
| Operating Class | Class AB or Class C (OFDM multicarrier capable) | — |
| Status RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Part Family | — | MW7IC2040 (NR1 / GNR1 / NBR1) |
| Device Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Output Power (CW) | — | 4 W typical |
| Power Supply Voltage | — | 24 V to 32 V (28 V nominal) |
| Arus Dalam Tentera | — | 75 mA (typical, per web data) |
| Small-Signal Gain | — | 23.5 dB (typical at 1.99 GHz, per web data) |
| Modulation Support | — | W-CDMA, GSM/EDGE, multi-carrier cellular |
| On-Chip Matching | — | Yes (input/output 50 ohm) |
| Number of Stages | — | 2 (multi-stage integrated) |
| Package Body Material | — | Plastic / Epoxy overmold |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Boson Bebas | — | Not Compliant (per GlobalSpec listing) |