MW7IC2750GNR1 vs MW7IC2040GNR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MW7IC2750GNR1 tarafından NXP Semiconductors ve MW7IC2040GNR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MW7IC2750GNR1 - 8W 2.3-2.7GHz WiMAX RF Power Amplifier | NXP
MW7IC2750GNR1 ✓ AktifÖzellik Karşılaştırması
| Parametre | MW7IC2750GNR1 | MW7IC2040GNR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Yaşam Döngüsü Durumu | Aktif | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale/Motorola) |
| Part Series | MW7IC2750N | — |
| RF Type | WiMAX / Broadband Wireless Access | General Purpose / Cellular Base Station PA |
| Frequency Range | 2300 MHz to 2700 MHz | 1805 MHz to 1990 MHz |
| Supply Voltage (VDD) | 28 V (rated 26 V to 32 V operation) | — |
| Quiescent Supply Current | 550 mA (typical) | — |
| Output Power (Pout) | 8 W average (per datasheet title) | — |
| Power Gain | 26 dB (typical) | — |
| Characteristic Impedance | 50 ohm | — |
| Ağ Yapısı | Multi-stage integrated (on-chip input and output matching) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | LDMOS (Laterally Diffused MOS) |
| Drain-Source Breakdown Rating | 65 V (per package marking referenced in distributor listings) | — |
| Paket / Kas | TO-270 WB-14 Gull Wing, 14-pin | TO-270-16 Variant, Gull Wing (TO-270 WBL-16) |
| Montaj Türü | Surface Mount (gull-wing leads with back-side flange) | Surface Mount (Gull Wing leads) |
| Packaging | Tape & Reel (TR) | Tape & Reel |
| Operating Class | Class AB or Class C (OFDM multicarrier capable) | — |
| RoHS Durumu | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| İşletim Sıcaklığı | [DATA_NEEDED: operating temperature range] | — |
| Part Family | — | MW7IC2040 (NR1 / GNR1 / NBR1) |
| Device Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Output Power (CW) | — | 4 W typical |
| Power Supply Voltage | — | 24 V to 32 V (28 V nominal) |
| Durağan Akım | — | 75 mA (typical, per web data) |
| Small-Signal Gain | — | 23.5 dB (typical at 1.99 GHz, per web data) |
| Modulation Support | — | W-CDMA, GSM/EDGE, multi-carrier cellular |
| On-Chip Matching | — | Yes (input/output 50 ohm) |
| Number of Stages | — | 2 (multi-stage integrated) |
| Package Body Material | — | Plastic / Epoxy overmold |
| İşletim Sıcaklığı Aralığı | — | [DATA_NEEDED: operating temperature range] |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Klorürsüz | — | Not Compliant (per GlobalSpec listing) |