NT5CB256M16CP-EK vs MT41K256M16RE-125:D Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CB256M16CP-EK disebabkan oleh Nanya Technology dan MT41K256M16RE-125:D disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ AktifPengandingan Spesifikasi
| Parametr | NT5CB256M16CP-EK | MT41K256M16RE-125:D |
|---|---|---|
| Merek | Nanya Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35V (1.425V to 1.575V) | 1.35 V |
| Kadar Data | DDR3-2133 (CL14) | 1600 MT/s |
| CAS Latency (CL) | 9, 10, 11, 12, 13, 14 | — |
| WRITE Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Posted CAS Additive Latency | Programmable | — |
| Internal Banks | 8 (BA0-BA2) | — |
| Kemasan | 96-ball TFBGA | FBGA-96 (9x14 mm) |
| Suhu Operasi | Commercial: 0C to +95C; Industrial: -40C to +95C; Automotive: -40C to +95C | 0C to +95C (TC) |
| RoHS | Compliant | Compliant |
| REACH | Compliant | — |
| Lead-Free | Yes | Yes |
| Jenis Pemasangan | Surface Mount | — |
| Latensi CAS | — | 11 |
| Burst Length | — | 8, 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| Ball Pitch | — | 0.8 mm |