NT5CB256M16CP-EK vs MT41K256M16RE-125:D Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CB256M16CP-EK sa pamamagitan ng Nanya Technology at MT41K256M16RE-125:D sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CB256M16CP-EK | MT41K256M16RE-125:D |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35V (1.425V to 1.575V) | 1.35 V |
| Rate ng Data | DDR3-2133 (CL14) | 1600 MT/s |
| CAS Latency (CL) | 9, 10, 11, 12, 13, 14 | — |
| WRITE Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Posted CAS Additive Latency | Programmable | — |
| Internal Banks | 8 (BA0-BA2) | — |
| Packhaging | 96-ball TFBGA | FBGA-96 (9x14 mm) |
| Temperature na Operasyon | Commercial: 0C to +95C; Industrial: -40C to +95C; Automotive: -40C to +95C | 0C to +95C (TC) |
| RoHS | Compliant | Compliant |
| REACH | Compliant | — |
| Lead-Free | Yes | Yes |
| Uri ng Pagpapasok | Surface Mount | — |
| Latensya ng CAS | — | 11 |
| Burst Length | — | 8, 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| Ball Pitch | — | 0.8 mm |