PDRQLAKCDF12-00 vs K4RAH165VB-BCWM Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci PDRQLAKCDF12-00 disebabkan oleh Samsung Electronics dan K4RAH165VB-BCWM disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
PDRQLAKCDF12-00 PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics

PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics

PDRQLAKCDF12-00 ✓ Aktif
Samsung Electronics
K4RAH165VB-BCWM K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung

K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung

K4RAH165VB-BCWM ✓ Aktif

Pengandingan Spesifikasi

Parametr PDRQLAKCDF12-00 K4RAH165VB-BCWM
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR5 SDRAM DDR5 SDRAM (volatile DRAM)
Density 16 Gbit —
Organisasi 1G x 16 —
Kadar Data 7200 Mbps per pin —
Speed Bin DDR5-7200 —
Operating Voltage 1.1 V —
Kemasan 102-ball FBGA FBGA-106
Jenis Pemasangan Surface Mount Surface Mount
Generation DDR5 (improved from 6400 Mbps generation) —
Antaramuka JEDEC DDR5 —
Package Height [DATA_NEEDED: package height] —
Suhu Operasi [DATA_NEEDED: operating temperature range] 0C to +85C
tCK / Cycle Time [DATA_NEEDED: clock cycle time] —
Latensi CAS [DATA_NEEDED: CAS latency] —
Standby Current [DATA_NEEDED: standby current] —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Saiz Ingatan — 16 Gb
Memory Organization — 1G x 16
Memory Interface — Parallel
Tegangan Pemberi Arus — 1.1 V
Technology — DDR5
Maximum Data Rate (DDR5 family) — up to 7200 Mbps
On-die ECC — Yes
Auto Self-Refresh — Yes
Asynchronous Reset — Yes
Write Leveling — Yes
CRC Function — Yes
ZQ Calibration — Yes
Speed Grade (suffix BCWM) — [DATA_NEEDED: speed grade / CAS latency]
Packaging — Tray

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