TPS4H000BQPWPRQ1 vs BTS5215LAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci TPS4H000BQPWPRQ1 disebabkan oleh Texas Instruments dan BTS5215LAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Texas Instruments
TPS4H000BQPWPRQ1 TPS4H000BQPWPRQ1 - 40V 4-Ch Smart High-Side Switch | TI

TPS4H000BQPWPRQ1 - 40V 4-Ch Smart High-Side Switch | TI

TPS4H000BQPWPRQ1 ✓ Aktif

Pengandingan Spesifikasi

Parametr TPS4H000BQPWPRQ1 BTS5215LAUMA1
Merek Texas Instruments Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Quad-channel smart high-side switch Smart High-Side Power Switch
Number of Channels 4 2
Supply Voltage Range 3.4 V to 40 V —
On-Resistance (per channel) 1000 mOhm (typical) —
Rated Output Current (per channel) 750 mA —
Had Arus External, adjustable —
Current Sense High-accuracy, multiplexed via CS pin —
Diagnostics Open-load, short-circuit, thermal, full fault reporting —
Control Inputs IN1, IN2, IN3, IN4, SEL —
Qualification AEC-Q100 qualified (automotive) —
Kemasan 20-pin HTSSOP (PWP) with exposed pad PG-DSO-12-9
Jenis Pemasangan Surface Mount —
Power FET Type Integrated NMOS with internal charge pump —
Target Rails 12-V and 24-V automotive/industrial —
Protection Overload, thermal shutdown, output clamp —
Status RoHS Compliant Compliant
On-State Resistance (RDS(on)) — 90 mΩ typical per channel
Continuous Output Current per Channel — 3.7 A
Operating Voltage Range — 8 V to 36 V
Standby Current — Very low (datasheet value [DATA_NEEDED: standby current uA])
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Status feedback per channel
MOSFET Technology — N-channel vertical power MOSFET with charge pump
Load Type Support — Resistive and inductive loads
Protection Features — Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage
Demagnetization — Fast demagnetization of inductive loads
Suhu Operasi — -40C to +150C (TJ) [DATA_NEEDED: ambient range exact]

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