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Central Semiconductor

BCY79-VII - PNP 45V 100mA Low Noise TO-18 | Central Semiconductor

MPN: BCY79-VII βœ— End of Life
In Stock Ships in 1-3 business days
45 V Vdss 100 mA Id TO-18 (TO-206AA), hermetically sealed metal case Package 100 MHz Speed
From $0.72 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.42 $1.42
10 $1.28 $12.80
100 $1.05 $105.00
500 $0.88 $440.00
1,000 $0.72 $720.00
ℹ️ All prices are in USD

BCY79-VII Overview

The Central Semiconductor BCY79-VII is a silicon PNP epitaxial planar bipolar junction transistor (BJT) rated at 45V collector-base voltage, 100mA maximum collector current, and 340mW power dissipation, housed in a hermetically sealed TO-18 metal can package with 100MHz transition frequency for low-noise amplifier and switching applications.

A bipolar junction transistor is a three-terminal current-controlled semiconductor device that amplifies or switches electronic signals. Within the component hierarchy, the BCY79-VII belongs to the small-signal BJT family: transistor -> bipolar junction transistor -> PNP general-purpose transistor -> discrete semiconductor. PNP devices conduct when the base is pulled low relative to the emitter, making them the complementary counterparts to NPN types in push-pull stages and differential pairs.

Key features include a low-noise figure suited to audio input stages, the hermetic TO-18 metal case that provides superior shielding and thermal stability versus plastic packages, and the -VII gain group selection (part of the BCY79 VII/VIII/IX/X hFE binning scheme) that guarantees predictable DC current gain for precision analog design. The 5V emitter-base rating and 200C maximum junction capability (per the Central Semiconductor family datasheet) support demanding legacy designs.

The epitaxial planar process delivers a 100MHz transition frequency, adequate for RF amplification up to VHF and fast small-signal switching. Because the die is sealed in metal, leakage currents remain low across temperature, benefiting high-impedance input stages in instrumentation.

Typical applications include low-noise audio preamplifier input stages, driver stages in analog signal chains, switching circuits in industrial legacy equipment, and RF/VHF small-signal amplification. Philips (now NXP) originally manufactured the BCY79 family; Central Semiconductor continues production for the aftermarket.

Design consideration: respect the 340mW package dissipation at 25C free air and derate above ambient; verify pin orientation (TO-18 pinout) before drop-in replacement because TO-18 lead arrangements vary across families.

This page synthesizes distributor pricing, drop-in alternatives, pinout data, and practical design notes not found in the manufacturer datasheet, with per-day verification against live web data.

Drop-in alternatives for BCY79-VII β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with BCY79-VII (same form factor and footprint) β€” differing in Configuration, Emitter-Base Voltage (VEBO), Package, Transistor Type.

Central Semiconductor
Configuration: Single transistor
Emitter-Base Voltage (VEBO): 5.0 V
Package: TO-18 metal can, 3-lead
Compare with BCY79-VII β†’

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

BCY79-VIII

βœ… Drop-In
πŸ“¦ TO-18
hFE gain bin VIII vs VII; identical 45V/100mA/340mW ratings and TO-18 pinout

πŸ“‹ Reference alternative (not in catalog)

BCY79-IX

βœ… Drop-In
πŸ“¦ TO-18
hFE gain bin IX vs VII (higher DC gain); otherwise pin-to-pin identical

πŸ“‹ Reference alternative (not in catalog)

BCY79-X

βœ… Drop-In
πŸ“¦ TO-18
highest hFE bin (X) of family; same package and max ratings

πŸ“‹ Reference alternative (not in catalog)

BCY79-VII PBFREE

βœ… Drop-In
πŸ“¦ TO-18
same die in lead-free/Pb-free finish for RoHS designs; identical electricals

πŸ“‹ Reference alternative (not in catalog)

BCY78-VII

βœ… Drop-In
πŸ“¦ TO-18
same family series PNP, gain bin VII; verify hFE window before direct swap

πŸ“‹ Reference alternative (not in catalog)

BCY79-VII

βœ… Drop-In
Central Semiconductor
πŸ“¦ TO-18
PNP Β· Bipolar (BJT), epitaxial planar silicon Β· 45 V Β· 5 V Β· 100 mA Β· 340 mW Β· 1 W

βœ“ In Stock

$0.72 / Unit

View Datasheet β†’

BCY79-VII Maximum Ratings & Electrical Characteristics

Polarity PNP
Transistor Type Bipolar (BJT), epitaxial planar silicon
Collector-Base Voltage (VCBO) 45 V
Emitter-Base Voltage (VEBO) 5 V
Maximum Collector Current (IC) 100 mA
Power Dissipation (PD) 340 mW
Total Device Dissipation (DigiKey listing) 1 W
Transition Frequency (fT) 100 MHz
hFE Gain Group VII (BCY79 VII/VIII/IX/X binning)
Package TO-18 (TO-206AA), hermetically sealed metal case
Mounting Type Through Hole
Configuration Single transistor, 3-pin
Maximum Operating Temperature 200 C (junction, per family datasheet)
Application Low noise amplifier and switching
Lead-Free / RoHS Option BCY79-VII PBFREE variant available (DigiKey/Mouser)
Series BCY78 / BCY79 (VII, VIII, IX, X)

BCY79-VII Pin Configuration

TO-18 Package Pinout Diagram TO-18 3-pin metal can, JEDEC. 1 2 3 TO-18
Pin 1 Emitter β€” Emitter terminal (PNP; connected toward supply negative in common-emitter use)
Pin 2 Base β€” Base control terminal; pull low relative to emitter to turn device on
Pin 3 Collector β€” Collector terminal; case is electrically connected to collector in TO-18 metal can

Typical Applications

BCY79-VII is suitable for 6 applications: Low-Noise Audio Preamplifier Input Stages, Analog Signal Chain Driver Stages, Low-Speed Switching Circuits in Legacy Industrial Equipment, RF and VHF Small-Signal Amplification, Instrumentation High-Impedance Input Front Ends, Automotive and Marine Legacy Electronics Repair.

🎧

Low-Noise Audio Preamplifier Input Stages

The BCY79-VII was explicitly designed for low-noise amplifier duty, and Philips application literature names audio input stages as a primary use. Its PNP polarity suits common-emitter and differential front ends fed from positive supplies, while the 100MHz transition frequency provides ample closed-loop bandwidth margin. The hermetic TO-18 metal can shields the die from electrostatic and RF pickup, protecting the noise floor in microphone preamps and phono stages. Use the -VII gain bin where the bias network was designed around its hFE window; with 45V VCBO, the device also tolerates higher-voltage tube-hybrid and professional +30V audio rails that exceed the ratings of many plastic-packaged BC5xx equivalents.

πŸ”§

Analog Signal Chain Driver Stages

In analog driver stages, the BCY79-VII provides 100mA collector current capability with predictable hFE from the VII bin, enabling stable bias without aggressive feedback. The 45V collector-base rating supports 24V industrial analog rails with headroom, and 340mW dissipation at 25C covers small-signal drive duties. Philips literature lists driver stages among the intended uses of the BCY79 family. Designers should derate power above 25C ambient and keep VCE at moderate levels when driving near the 100mA limit. In complementary push-pull output stages, pair the BCY79-VII with an NPN driver of matching fT and package to preserve symmetry.

🏭

Low-Speed Switching Circuits in Legacy Industrial Equipment

The Central Semiconductor datasheet classes the BCY78/BCY79 series as suitable for switching applications, and Philips datasheets title the family PNP switching transistors. With 100mA collector capability and a 5V emitter-base rating, the BCY79-VII handles relay-driver, indicator, and level-shifting duties in legacy industrial control boards designed when the Philips BCY79 was a catalog standard part. The hermetic TO-18 can resists moisture ingress better than plastic packages, supporting equipment in humid or harsh environments. Because the part is now EOL, maintenance engineers repairing such equipment should secure stock or qualify BCY79-VIII/IX/X as pin-compatible substitutions within the same footprint.

🌐

RF and VHF Small-Signal Amplification

With a 100MHz transition frequency, the BCY79-VII provides useful gain through the HF band and into low VHF for receiver front ends, IF strips, and oscillator stages in legacy communications equipment. The metal TO-18 package grounds naturally to shielding structures and reduces parasitic feedback versus plastic leads, improving stability at RF. Because the device is PNP, it suits positive-ground oscillator topologies common in older designs. Noise performance from the epitaxial planar process keeps the noise figure acceptable for receive-chain use. Keep operating point moderate - the 340mW limit at 25C bounds available output - and verify hFE bin (VII) against the bias network when restoring period-correct radio equipment.

πŸ”¬

Instrumentation High-Impedance Input Front Ends

The hermetic seal of the TO-18 metal case keeps leakage currents low and stable across temperature and humidity, which matters in high-impedance measurement front ends where bias current error dominates accuracy. The BCY79-VII's defined hFE window (bin VII) lets designers bound input bias current in differential pairs used for electrometer-style buffers and data-acquisition inputs. The 45V rating tolerates over-range input excursions on 24V-based industrial instruments. For best results, match transistor pairs from adjacent bins (VII/VIII) on the same die family to minimize offset drift. As the part is EOL, new instrument designs should consider current-production low-noise PNP alternatives and reserve BCY79 for legacy service.

πŸš—

Automotive and Marine Legacy Electronics Repair

Hermetic metal-can transistors such as the BCY79-VII were widely used in 1970s-1990s automotive ECUs, marine instruments, and avionics where humidity, vibration, and temperature swings exceeded plastic-package capabilities. The 200C maximum junction temperature and TO-18 mechanical robustness suit under-dash and engine-bay-adjacent modules. Repair technicians restoring such boards need the exact VII hFE bin in circuits where bias was factory-trimmed; otherwise BCY79-VIII/IX/X drop directly into the same TO-18 footprint. Note the through-hole leads require careful soldering to avoid mechanical stress on the glass-to-metal seal, and the part's EOL status makes stocking spares advisable for fleet-maintenance operations.

Recommended Products Summary

BCY79-IX Higher-gain sibling for input pairs needing more hFE Used in: Low-Noise Audio Preamplifier Input Stages, Low-Speed Switching Circuits in Legacy Industrial Equipment, Automotive and Marine Legacy Electronics Repair BCY79-VIII Adjacent gain bin for matched-pair selection Used in: Low-Noise Audio Preamplifier Input Stages, RF and VHF Small-Signal Amplification, Instrumentation High-Impedance Input Front Ends BCY78-VII Family PNP for complementary or mirrored stages Used in: Analog Signal Chain Driver Stages BCY79-X High-gain bin for reduced base-drive requirement Used in: Analog Signal Chain Driver Stages, RF and VHF Small-Signal Amplification BCY79-VII PBFREE Lead-free variant for compliant repair work Used in: Low-Speed Switching Circuits in Legacy Industrial Equipment, Instrumentation High-Impedance Input Front Ends, Automotive and Marine Legacy Electronics Repair
What is the BCY79-VII transistor and what are its key specifications?
The BCY79-VII is a silicon PNP epitaxial planar BJT from Central Semiconductor in a hermetic TO-18 metal can. Key specifications are 45V VCBO, 5V VEBO, 100mA maximum collector current, 340mW power dissipation, and 100MHz transition frequency, with hFE binned in gain group VII. Per the Central Semiconductor BCY78/BCY79 family datasheet, it targets low-noise amplifier and switching applications.
What is the difference between BCY79-VII, BCY79-VIII, BCY79-IX and BCY79-X?
The suffix (VII, VIII, IX, X) indicates the DC current gain (hFE) bin of the same die in the same TO-18 package. According to the Central Semiconductor BCY78/BCY79 datasheet, all four groups share identical voltage, current, power, and frequency ratings; only the hFE window differs, letting designers select the gain band needed for a given bias point.
Is BCY79-VII end of life or still in production?
The BCY79-VII is classified as End of Life (EOL). The Central Semiconductor datasheet update notice (dated on the BCY78-79 datasheet sheet) states the device is discontinued under the industry practice of discontinuing devices when customer demand is not sustainable. Remaining stock is available through distributors such as DigiKey and Mouser; plan a last-time-buy or qualify a drop-in alternative.
What is the best drop-in replacement for BCY79-VII?
The best drop-in replacements are the gain-bin siblings from the same family: Central Semiconductor BCY79-VIII, BCY79-IX, or BCY79-X, which share the identical TO-18 hermetic package, 45V/100mA/340mW ratings, and pinout, differing only in hFE bin. Select the bin whose gain window best matches your bias design. BCY78-VII (same family, NPN-equivalent naming series variant) is also pin-compatible for reference.
Can an NPN transistor replace BCY79-VII in my circuit?
No. The BCY79-VII is a PNP transistor; a direct electrical replacement must also be PNP with matching polarity. NPN complements such as 2N2222-family devices require circuit modifications (reversed supply polarity on the transistor terminals and bias network changes). For a drop-in PNP replacement, use another BCY79 family member or a verified PNP equivalent in the same TO-18 pinout.
What is the pinout of the BCY79-VII in TO-18 package?
The BCY79-VII uses the standard TO-18 three-lead arrangement with pin 1 = emitter, pin 2 = base, and pin 3 = collector, per the Philips/Central Semiconductor BCY79 datasheets. Because TO-18 pin assignments vary across manufacturers and families, always confirm against the specific datasheet before soldering, especially when substituting from another family.
Where can I download the BCY79-VII datasheet PDF?
The BCY79-VII datasheet PDF is available from Central Semiconductor's official site (my.centralsemi.com/datasheets/BCY78-79.PDF), covering the BCY78 and BCY79 series (VII, VIII, IX, X) in a 2-page document. Mirror copies are hosted on Alldatasheet (Central Semiconductor and Philips versions) and Datasheet4U. Always prefer the manufacturer-hosted PDF for the most current revision.
Where can I buy BCY79-VII and how much does it cost?
BCY79-VII and its RoHS PBFREE variant are listed at DigiKey and Mouser. Pricing is approximately $1.42 at quantity 1, stepping down to about $0.72 at 1000 pieces, as of 2026-09-14. Because the part is EOL, stock is allocated to remaining inventory and may vary by distributor; check both distributors for combined availability before committing a BOM.
Is BCY79-VII RoHS compliant and lead-free?
The standard BCY79-VII through-hole hermetic TO-18 device is offered in a lead-free PBFREE variant (BCY79-VII PBFREE) listed at DigiKey and Mouser. Compliance of the legacy non-PBFREE suffix should be confirmed with Central Semiconductor. For new RoHS-required designs, specify the PBFREE suffix explicitly when ordering.
Is the BCY79-VII suitable for low-noise audio amplifier input stages?
Yes. The Central Semiconductor family datasheet describes the BCY78/BCY79 series as silicon PNP epitaxial planar transistors designed for low noise amplifier applications, and Philips literature specifically cites audio input stages, driver stages, and low-noise input stages. The hermetic metal TO-18 can additionally shields the die from electrostatic interference, which helps preserve a low noise floor in sensitive front ends.
BCY79-VII vs BC557B - which is better for audio preamps?
The BCY79-VII offers a hermetically sealed metal TO-18 can with superior shielding and higher junction temperature capability, while the BC557B comes in a lower-cost plastic TO-92. Both are PNP small-signal devices suited to audio front ends, but they are NOT drop-in interchangeable: packages and pinouts differ, so PCB rework is required. Choose BCY79-VII for legacy or environmentally severe designs; BC557B for new cost-driven boards.
When should I choose BCY79-VII over BCY79-IX?
Choose the BCY79-VII (gain group VII) when your design needs the hFE band associated with the lowest gain bin of the family, for example to control quiescent current in discrete amplifiers or to match a legacy bias network. Choose BCY79-IX when higher DC current gain improves loop gain or reduces base drive requirements. Electrically the parts are identical except hFE, so the choice is purely a gain-matching decision.
How much power can the BCY79-VII dissipate and does it need derating?
The BCY79-VII is rated 340mW at 25C free air per the Mouser listing (DigiKey lists up to 1W for the total-device condition), and the family datasheet permits a 200C maximum operating temperature. Dissipation must be derated linearly as ambient rises above 25C. Estimated: at 45V and 100mA worst-case the device would exceed its rating, so keep collector current well below maximum when collector voltage is high.
What is a good NXP/Philips equivalent for BCY79-VII?
Philips (now NXP Semiconductors) originally manufactured the BCY79-VII as a PNP switching transistor in TO-18, and NXP datasheets for BCY79VII remain in circulation on Alldatasheet. The NXP/Philips BCY79-VII is electrically equivalent to the Central Semiconductor part and uses the same TO-18 footprint. Because both manufacturers used the same JEDEC-style numbering, procurement teams can cross-ship between them where stocks allow.
Is BCY79-VII the same as BCY78-VII?
They are family siblings, not the same part. Per the Central Semiconductor datasheet, BCY78 and BCY79 series (VII, VIII, IX, X) are both silicon PNP epitaxial planar transistors in hermetically sealed metal cases designed for low noise and switching use. They share the TO-18 package and rating structure but differ in their specified hFE ranges and some voltage ratings, so verify the exact bin before substituting one for the other.

Engineering reference data for BCY79-VII β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the BCY79-VII when repairing or maintaining legacy analog equipment whose bias networks were trimmed around the family's lowest hFE bin, or where the hermetic TO-18 metal can is required for humidity and shielding robustness. If stock of the VII bin is exhausted, BCY79-VIII, IX, or X drop directly into the same footprint - select the closest higher bin only after checking that increased hFE will not shift quiescent current beyond circuit tolerance, particularly in direct-coupled stages. Specify BCY79-VII PBFREE for RoHS-required repairs. For brand risk mitigation, the Philips/NXP-manufactured BCY79-VII is electrically equivalent and footprint-identical. Do not substitute plastic TO-92 parts such as BC557 without PCB rework, since packages and pinouts differ. Because the device is EOL, place a last-time-buy covering expected service life before qualifying any substitute.

Comparison with Alternatives

Parameter This Product BCY79-VIII BCY79-IX BCY79-X BCY79-VII (Philips/NXP)
Package TO-18 hermetic metal can TO-18 - same TO-18 - same TO-18 - same TO-18 - same
Brand Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor NXP Semiconductors (Philips)
Polarity PNP PNP PNP PNP PNP
VCBO 45 V 45 V 45 V 45 V 45 V
Max Collector Current 100 mA 100 mA 100 mA 100 mA 100 mA
Power Dissipation 340 mW 340 mW 340 mW 340 mW 340 mW
hFE Gain Group VII (lowest bin) VIII IX X (highest bin) VII
Transition Frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz

Key Differentiators

  • Hermetic TO-18 metal can with case at collector (vs BCY79-VIII)
  • Guaranteed hFE bin (VII) for predictable bias (vs BCY79-IX)
  • Dual-sourcing heritage with Philips/NXP (vs BCY79-VII (Philips/NXP))

Design Notes

Confirm TO-18 pin orientation before substitution: the BCY79 uses pin 1 = emitter, pin 2 = base, pin 3 = collector (case at collector), but other TO-18 families use different arrangements (e.g., collector-base-emitter sequences). Soldering the device with reversed E/C will invert beta and may exceed VEBO, destroying the emitter junction. Always verify against the Central Semiconductor BCY78-79 datasheet diagram rather than assuming universal TO-18 pinout conventions.

Estimated: at the 340mW full rating with a typical TO-18 junction-to-ambient thermal resistance on the order of 300-350 C/W, junction rise approaches 100-120 C above a 25C ambient, leaving little margin to the 200C family limit in hot enclosures. Derate dissipation linearly above 25C and keep continuous dissipation under roughly 150mW in sealed, high-ambient equipment. In switching duty, ensure saturation (forced beta of 10) so the die does not linger in the high-dissipation linear region.

In low-noise input stages, source impedance drives noise performance: match the collector current to the datasheet noise-optimum operating point region rather than running maximum current. In the hermetic metal can the case is at collector potential, so mount the can away from unshielded wiring or isolate it to avoid capacitive coupling. When matching differential pairs, select transistors from the same hFE bin and, ideally, the same date code to minimize offset and drift.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Central Semiconductor offers a PBFREE (lead-free) variant of BCY79-VII listed at DigiKey and Mouser, indicating RoHS-relevant lead-free compliance for that suffix. Compliance status of the legacy standard suffix is not stated in the provided data.

Data verified on: 2026-09-14 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Central Semiconductor BCY79-VII BCY79-VIII BCY79-IX BCY79-X BCY78-VII BCY79-VII PBFREE NXP Semiconductors Philips PNP transistor bipolar junction transistor BJT TO-18 TO-206AA hermetic metal can package epitaxial planar process hFE gain binning transition frequency low-noise amplifier through-hole mounting EOL (end of life) DigiKey Mouser audio preamplifier input stage VHF small-signal amplifier
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