IKN06N60RC2ATMA1 - 600V 8A RC2 Reverse-Conducting IGBT | Infineon
MPN: IKN06N60RC2ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.86 | $430.00 |
| 1,000 | $0.72 | $720.00 |
IKN06N60RC2ATMA1 Overview
An RC (Reverse Conducting) IGBT is a single-die power switch that combines the IGBT transistor and a freewheeling diode on the same silicon substrate, eliminating the need for an external anti-parallel diode. This integration reduces parasitic inductance, simplifies PCB layout, lowers BOM cost, and improves reliability by removing the diode-to-IGBT bond-wire connection that often fails in discrete designs. RC-IGBTs are widely used in home-appliance motor drives, induction cooking, and welding inverters where cost-sensitive, high-volume power conversion is required.
The IKN06N60RC2ATMA1 features a typical VCE(sat) of 2 V at rated current, low switching losses optimized for hard-switched topologies, and a 600 V collector-emitter breakdown voltage that provides 100 V safety margin above standard 400 V rectified mains. The monolithically integrated diode delivers robust reverse-recovery behavior matched to the IGBT's switching characteristics, eliminating the diode selection step from the design cycle. The device is also known as part of Infineon's 600 V RC2 product family.
Typical applications include induction cooking inverter half-bridges, low-power motor drives for pumps and fans, electronic ballasts for fluorescent and HID lighting, and small uninterruptible power supplies (UPS). The 8 A current rating and 600 V blocking voltage suit 1-phase rectified mains (220-240 VAC) and 3-phase 400 V rectified bus designs. The PG-SOT223-3 surface-mount package supports high-volume automated assembly while providing sufficient thermal performance for these moderate-power applications.
When designing with this device, ensure adequate copper area on the PCB for the tab to act as a heat spreader. The gate drive should use a 15 V supply with a gate resistor in the 10-47 ohm range to control switching speed and EMI. The integrated diode's reverse-recovery characteristics are tuned for hard switching, so this part is not recommended for zero-voltage-switching (ZVS) or zero-current-switching (ZCS) resonant topologies.
This page synthesizes distributor pricing, SOT-223 drop-in alternatives, and practical thermal design notes not found in the standalone manufacturer datasheet, helping engineers shorten selection time and avoid common design pitfalls in cost-sensitive 600 V switching applications.
Drop-in alternatives for IKN06N60RC2ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IKN06N60RC2
β Drop-Inπ Reference alternative (not in catalog)
IKN03N60RC2ATMA1
β Drop-Inπ Reference alternative (not in catalog)
IKN06N60RC2ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IKN06N60RC2ATMA1 |
| Product Family | Reverse Conducting IGBT (RC2) |
| Collector-Emitter Voltage (Vces) | 600 V |
| Continuous Collector Current (IC @ TC=25C) | 8 A |
| Maximum Power Dissipation (Ptot) | 7.2 W |
| VCE(sat) typical @ IC | 2.0 V |
| Gate-Emitter Voltage (VGES) | +/-20 V |
| Integrated Diode | Yes (Reverse Conducting) |
| Package | PG-SOT223-3 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40C to +175C (TJ max) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Technology | RC2 (Reverse Conducting 2nd gen) |
IKN06N60RC2ATMA1 Pin Configuration
| Pin 1 | G (Gate) β Gate control input, typically driven with 15V via gate resistor |
| Pin 2 | D (Drain/Collector internal) β Connected to internal collector region; pin 2 is typically NC or internally tied to tab |
| Pin 3 | S (Source/Emitter) β Emitter return, connected to power ground |
| Pin Tab | C (Collector) β Collector (drain) terminal and thermal pad, must be soldered to PCB copper pour for heat dissipation |
Safe Operating Area (DC)
Typical Applications
IKN06N60RC2ATMA1 is suitable for 6 applications: Induction Cooking Inverter Half-Bridge, Low-Power Motor Drive (Pumps, Fans, Small Appliances), Electronic Ballast for HID and Fluorescent Lighting, Small Uninterruptible Power Supply (UPS) Inverter, Solar Micro-Inverter (Low-Power Grid-Tie), Welding Inverter (Small Hobbyist / Low-Power Stick Welder).
Induction Cooking Inverter Half-Bridge
The IKN06N60RC2ATMA1's 600 V blocking voltage, 8 A continuous current, and monolithically integrated RC2 freewheeling diode make it ideal for 1-2 kW single-coil induction cooker half-bridge inverters. The 8 A rating matches typical resonant current for low-mid power induction heating, while the integrated diode eliminates BOM cost and reduces parasitic inductance. The 600 V rating provides 100 V margin above 400 V bus voltages seen in single-phase rectified mains. Compared to a discrete IGBT + diode solution, the RC-IGBT delivers matched switching characteristics and reduces assembly steps, making it well-suited for high-volume consumer induction cooking products.
Recommended
Low-Power Motor Drive (Pumps, Fans, Small Appliances)
The IKN06N60RC2ATMA1 is well-suited for low-power variable-frequency motor drives in pumps, fans, washing machines, and small home appliances. The 8 A continuous current handles fractional-horsepower single-phase AC motors at 220-240 VAC, and the integrated RC2 diode simplifies the inverter half-bridge. The PG-SOT223-3 surface-mount package enables compact PCB designs typical of home appliance mainboards. The 7.2 W power dissipation rating is adequate for the moderate switching frequencies (5-20 kHz) used in motor PWM control.
Recommended
Electronic Ballast for HID and Fluorescent Lighting
The IKN06N60RC2ATMA1 is applicable in electronic ballasts for high-intensity discharge (HID) lamps and high-power fluorescent lighting. Its 600 V Vces and 8 A continuous current suit the half-bridge resonant inverter that drives the lamp. The integrated RC2 diode reduces component count in cost-sensitive ballast designs. The 2.0 V VCE(sat) keeps conduction losses manageable at the high RMS currents typical of lamp ballasts. The SOT-223 package supports the compact form factor of integrated ballast electronics.
Recommended
Small Uninterruptible Power Supply (UPS) Inverter
The IKN06N60RC2ATMA1 fits low-power line-interactive UPS inverters rated 500-1000 VA, where 8 A continuous current supports the inverter bridge feeding the AC load. The 600 V blocking voltage handles the rectified 220-240 VAC mains with safety margin. The integrated RC2 freewheeling diode simplifies the inverter's bridge or half-bridge structure, reducing PCB area and BOM cost. The SOT-223 surface-mount package supports high-volume automated assembly typical of consumer-grade UPS products.
Recommended
Solar Micro-Inverter (Low-Power Grid-Tie)
In small single-panel solar micro-inverters (100-300 W), the IKN06N60RC2ATMA1 can serve as the DC-AC inverter switch. The 600 V rating supports 600 V PV string voltages with appropriate derating, and the 8 A current matches low-power micro-inverter output stages. The integrated RC2 diode reduces component count in the compact micro-inverter housing. Note that high-frequency switching (>20 kHz) may require careful EMI mitigation due to the device's hard-switching optimization.
Recommended
Welding Inverter (Small Hobbyist / Low-Power Stick Welder)
The IKN06N60RC2ATMA1 is usable in low-power hobbyist welding inverter designs up to ~100 A output, where 8 A primary-side current supports the high-frequency transformer. The 600 V blocking voltage handles the rectified 220 VAC mains, and the integrated RC2 diode reduces the secondary-side rectifier complexity. The hard-switching optimization of RC2 technology is suitable for the IGBT-based full-bridge topology used in these designs. The SOT-223 package supports the compact PCB layouts typical of portable welding equipment.
Recommended
Recommended Products Summary
Engineering reference data for IKN06N60RC2ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKN06N60RC2 | IKN03N60RC2ATMA1 | IKD15N60RFATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SOT223-3 | PG-SOT223-3 | PG-SOT223-3 | TO-252 (DPAK) |
| Vces (V) | 600 | 600 | 600 | 600 |
| Continuous IC (A) | 8 | 8 | 3 | 15 |
| Ptot (W) | 7.2 | 7.2 | 3.5 | 75 |
| Integrated Diode | Yes (RC2) | Yes (RC2) | Yes (RC2) | No (discrete IGBT) |
| VCE(sat) typ (V) | 2.0 | 2.0 | 1.95 | 1.5 |
| Technology | RC2 (Reverse Conducting) | RC2 | RC2 | Standard IGBT |
Key Differentiators
- Monolithically integrated freewheeling diode (RC2 technology) (vs IKD15N60RFATMA1)
- Surface-mount SOT-223 package for automated assembly (vs IKW06N60RC2 (TO-247 through-hole))
- 600 V rating with 100 V margin for 400 V rectified bus (vs 500V-class IGBTs)
Design Notes
Estimated: At 8 A continuous collector current with 2.0 V VCE(sat), conduction loss is approximately 16 W worst case, exceeding the 7.2 W Ptot rating. In practice, the device must be operated well below 8 A continuous at typical switching frequencies, or with a significant PCB copper heatsink. The PG-SOT223-3 tab must be soldered to at least 1 square inch of 2 oz copper to achieve the rated thermal performance. Use thermal vias to inner layers to spread heat. For continuous operation above 4 A, consider forced-air cooling or a discrete IGBT in DPAK/TO-220.
The PG-SOT223-3 tab serves as the collector terminal AND the primary thermal path. The exposed pad must be soldered to a copper pour on the PCB top layer, with thermal vias connecting to inner copper planes for additional heat spreading. The gate trace should be kept short and routed away from the switching node (collector) to minimize parasitic gate-drive inductance. A 10 ohm gate resistor is typical to control switching speed and limit ringing; reduce to 4.7 ohm for higher efficiency at the cost of higher EMI.
Do not use the IKN06N60RC2ATMA1 in zero-voltage-switching (ZVS) or zero-current-switching (ZCS) resonant topologies - the integrated RC2 diode is optimized for hard switching, not resonant recovery. Exceeding the 600 V Vces rating (e.g., during turn-off transients in unclamped inductive switching) will permanently damage the device; always include adequate snubbing or TVS clamping on the switching node. The gate drive voltage should be 15V +/-10%; under-driving the gate (e.g., 12V) will increase VCE(sat) and conduction losses significantly.
Minimize the high-current loop area between the DC bus capacitors, the IGBT collector-emitter, and the load. The integrated diode is inside the IGBT die, so the external commutation loop is just the IGBT-to-capacitor-to-load path. Place the gate driver physically close to the IGBT gate pin (within 5-10 mm) to minimize gate-loop inductance. For half-bridge configurations, place the high-side and low-side IGBTs as close as possible to minimize commutation loop inductance and limit turn-off voltage spikes.
Compliance Information
RoHS and REACH compliant per Infineon product declaration. Not AEC-Q100 qualified; not intended for automotive applications. Halogen-free per JEDEC JS709A. ATMA1 suffix denotes tape-and-reel packaging per Infineon ordering code convention.
