IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon
MPN: IKD15N60RFATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.47 | $24.70 |
| 100 | $1.98 | $198.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.35 | $1,350.00 |
IKD15N60RFATMA1 Overview
An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor that combines the high input impedance of a MOSFET gate with the low conduction (saturation) loss of a bipolar junction transistor. Within the broader taxonomy, IGBTs sit between power MOSFETs (better for low-voltage/high-frequency) and thyristors (better for very high voltage/current), making them the dominant switch for 400 V to 1200 V motor drives, UPS systems, and induction-heating converters. The TRENCHSTOP IGBT3 generation specifically optimizes the VCE(sat)/Eoff trade-off curve compared with the older IGBT2 generation, yielding lower switching losses in hard-switched 600 V bridge topologies.
Key features include a 600 V collector-emitter breakdown voltage (VCES), 30 A continuous collector current (IC at TC = 25 C), a typical VCE(sat) of around 1.5 V at nominal current, and a maximum operating junction temperature of 175 C. The integrated emitter-controlled diode supports reverse-conduction operation in half-bridge and full-bridge inverters, removing the need for a separate ultrafast rectifier across the IGBT. The DPAK (TO-252-3) package is qualified for high-volume surface-mount manufacturing and offers a tab that doubles as the collector terminal, simplifying PCB layout and thermal sinking to a copper pad.
In typical application, the IKD15N60RF is used in a 3-phase IGBT inverter stage supplied by a rectified 230 VAC or 310 VDC bus, switching at 4 kHz to 20 kHz to drive a 3-phase induction or BLDC motor. The integrated anti-parallel diode simplifies the bridge layout and reduces dead-time requirements. Compared with discrete IGBT + diode solutions, the co-pack version reduces component count by 33% in a 3-phase bridge and improves thermal coupling between the IGBT and its diode, enabling smaller heatsinks in cost-sensitive consumer appliances.
When designing with this part, ensure that the gate drive voltage reaches at least 15 V during turn-on (VGE(th) is typically 5.5 V; full enhancement requires 15 V) and that the layout keeps the gate loop inductance below 30 nH. The tab is electrically connected to the collector, so a thermal interface material or solder-filled thermal via under the tab is required to keep Tj below 150 C at full 15 A load. Avoid paralleling these parts without external gate-source balancing resistors, as the VCE(sat) tolerance can cause current imbalance.
This page synthesizes distributor pricing, pin-compatible drop-in alternatives (same Infineon family, then cross-brand options), and practical thermal and gate-drive design notes not found in the manufacturer datasheet, with a focus on the consumer appliance motor-drive market segment that this IKD15N60RF was developed to serve.
Drop-in alternatives for IKD15N60RFATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IKD15N60RFATMA1 (same form factor and footprint) β differing in Operating Junction Temperature, Package, Integrated Diode, Maximum Power Dissipation (Ptot).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IKD15N60RATMA1
β Drop-Inβ In Stock
$1.22 / Unit
View Datasheet βIGD06N60TATMA1
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βNGB15N60S
β Drop-Inπ Reference alternative (not in catalog)
STGF15NC60SD
β Drop-Inπ Reference alternative (not in catalog)
IKU15N60RBKMA1
β Drop-Inπ Reference alternative (not in catalog)
IKD15N60RFATMA1 Maximum Ratings & Electrical Characteristics
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC at TC=25C) | 30 A |
| Continuous Collector Current (IC at TC=100C) | 15 A |
| Gate-Emitter Voltage (VGES) | +/-20 V |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) |
| Maximum Power Dissipation (Ptot) | 250 W |
| Operating Junction Temperature | -40C to +175C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) |
| Package | PG-TO252-3 (DPAK), 3 pins (2 + tab) |
| Mounting Type | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) |
| RoHS Compliance | Compliant |
IKD15N60RFATMA1 Pin Configuration
| Pin 1 | Gate (G) β Gate control input; drive with 15 V ON and -5 V to -8 V OFF for optimal switching |
| Pin 2 | Collector (C) β Main current terminal; electrically connected to the metal tab |
| Pin 3 | Emitter (E) β Current return terminal and anti-parallel diode anode |
| Pin Tab | Collector (C) β Collector terminal exposed as the metal tab; provides thermal path and must be soldered to a copper pad |
Safe Operating Area (Forward-Bias, DC)
Typical Applications
IKD15N60RFATMA1 is suitable for 6 applications: Washing Machine Direct-Drive Inverter, Refrigerator Compressor Drive, Ceiling Fan and HVAC Fan Motor Drive, Small Industrial Motor Drive (Sub-2 kW), Uninterruptible Power Supply (UPS) Inverter Stage, Induction Cooking and Induction Heater Power Stage.
Washing Machine Direct-Drive Inverter
The IKD15N60RFATMA1 is the recommended IGBT for direct-drive washing-machine 3-phase inverters where a 230 VAC rectified bus (310 VDC) powers a 1-2 kW BLDC motor. Its 600 V VCES comfortably handles rectified line transients up to 440 V, while the 15 A continuous rating at TC=100 C matches the motor's RMS current. The integrated co-pack diode reduces the BOM by 33% versus a discrete IGBT-plus-diode bridge, and the TRENCHSTOP IGBT3 conduction loss (~1.5 V VCE(sat)) keeps steady-state dissipation around 22 W, allowing a small aluminum heatsink in the consumer enclosure.
Recommended
Refrigerator Compressor Drive
Refrigerator compressor inverters need a compact, reliable IGBT that can switch at 4-10 kHz and handle the high inrush of a single-phase induction compressor. The IKD15N60RFATMA1's hard-switching RC-Drives Fast speed class is specifically optimized for this load profile, providing a clean trade-off between VCE(sat) and Eoff that limits heatsink size. The TO-252-3 (DPAK) surface-mount package is fully compatible with the high-volume SMT lines used by appliance OEMs, eliminating the through-hole mounting step required by older TO-220 or TO-247 IGBTs.
Recommended
Ceiling Fan and HVAC Fan Motor Drive
Variable-speed ceiling fans and HVAC blower motors benefit from the IKD15N60RFATMA1's 600 V / 15 A ratings and small DPAK footprint. The integrated anti-parallel diode allows a half-bridge or full-bridge topology without discrete rectifiers, and the 250 W power dissipation rating supports the short-duration current spikes during motor start-up. Compared with a discrete MOSFET-based inverter, the IGBT's lower conduction loss at the rectified 310 VDC bus results in cooler operation and longer bearing life in the fan motor itself.
Recommended
Small Industrial Motor Drive (Sub-2 kW)
Light-industrial applications such as small pumps, conveyor belts, and machine-tool spindles below 2 kW can use the IKD15N60RFATMA1 in a 3-phase IGBT inverter stage. The 15 A continuous rating covers most sub-1.5 kW 3-phase induction motors, and the 600 V VCES handles a 400 V industrial bus. The co-pack diode simplifies the bridge layout for designers transitioning from older discrete IGBT-plus-diode designs, and the TRENCHSTOP IGBT3 technology provides adequate switching loss performance at the 8-16 kHz switching frequencies common in industrial VFDs.
Recommended
Uninterruptible Power Supply (UPS) Inverter Stage
Low-power line-interactive and online UPS systems in the 1-2 kVA range use the IKD15N60RFATMA1 in the inverter stage that converts 48 VDC battery voltage to 230 VAC via a low-frequency transformer. The 600 V VCES provides the necessary headroom for the 320 VDC battery bus plus the reflected transformer primary voltage, while the 15 A continuous rating covers the 1 kVA power level. The integrated co-pack diode handles the freewheeling current during the dead-time intervals, simplifying the gate-driver layout.
Recommended
Induction Cooking and Induction Heater Power Stage
Single-burner induction cookers and small induction heaters operate at 20-100 kHz on a rectified 230 VAC bus, and the IKD15N60RFATMA1's hard-switching RC-Drives Fast class is well-matched to the resonant tank topology. The 600 V VCES handles the resonant voltage overshoot above the DC bus, and the co-pack diode provides the freewheeling path during the zero-voltage switching (ZVS) transition. Although 600 V IGBTs are at the upper end for high-frequency induction heating, this part's competitive price point keeps it attractive for low-cost consumer induction products.
Recommended
Recommended Products Summary
Engineering reference data for IKD15N60RFATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKD15N60R | IGD06N60TATMA1 | NGB15N60S | STGF15NC60SD | IKU15N60RBKMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | STMicroelectronics | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| VCES (Collector-Emitter Voltage) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous IC at TC=100C | 15 A | 15 A | 6 A | 15 A | 16 A | 15 A |
| VCE(sat) at IC=15A, VGE=15V (typical) | 1.5 V | 1.5 V | 1.5 V (at 6 A) | 1.7 V | 1.6 V | 1.5 V |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast) | Yes | Yes | Yes | Yes | Yes |
| Maximum Power Dissipation | 250 W | 250 W | 125 W | 200 W | 250 W | 250 W |
| Technology Generation | TRENCHSTOP IGBT3 (Field-Stop) | TRENCHSTOP IGBT3 | TRENCHSTOP IGBT3 | Non-Trench PT-IGBT | PowerMESH IGBT | TRENCHSTOP IGBT3 |
| Target Application Class | Consumer drives, hard-switching | Consumer drives | Low-power consumer | Consumer / industrial | Consumer / industrial | Consumer drives |
Key Differentiators
- TRENCHSTOP IGBT3 generation with optimized VCE(sat)/Eoff trade-off (vs STGF15NC60SD (PowerMESH IGBT))
- Integrated co-pack RC-Drives Fast anti-parallel diode (vs NGB15N60S (onsemi))
- Cost-optimized 600 V / 15 A position for the consumer appliance market (vs IKW15N60H3 (high-speed variant))
Design Notes
Estimated: at IC=15 A, VCE(sat)=1.5 V, the steady-state conduction loss is 22.5 W, which must be subtracted from the 250 W Ptot budget. The DPAK (TO-252-3) package has a typical theta_JA of around 50 C/W on a 1 sq-inch copper pad, so junction temperature rise is approximately 22.5 W x 50 C/W = 1125 C/W, which would far exceed the 175 C Tj limit. In practice, the IKD15N60RF is designed to operate at switching losses significantly higher than conduction loss; the application is the consumer drive market with a heatsink giving around 5-10 C/W, keeping Tj below 150 C at full 15 A load.
Keep the gate-drive loop inductance below 30 nH by routing the gate and emitter return traces directly above each other on adjacent PCB layers. The collector tab in the DPAK package is electrically live, so the heatsink (if used) must be electrically isolated with a thermal interface material rated for 600 V. Place a 10 kohm gate-source resistor directly across the gate and emitter pins to prevent parasitic turn-on from Miller-effect dv/dt during hard-switching transitions.
Do not parallel IKD15N60RF devices without external gate-source balancing resistors; the VCE(sat) production tolerance can cause current imbalance in parallel operation. Do not drive the gate at less than 12 V or the IGBT will operate in the linear region with high conduction loss and risk of thermal runaway. Do not connect the metal tab to a grounded heatsink without an insulating thermal pad, as the tab is internally connected to the collector.
The DPAK land pattern should use a minimum 50 mm^2 copper pour for the tab to achieve the rated thermal performance, with thermal vias to the inner copper plane for additional heat spreading. Use a snubber capacitor (typically 100-470 pF) across the collector-emitter of each IGBT in a hard-switched bridge to limit dv/dt-induced voltage overshoot below 600 V, especially in 400 V industrial bus applications. The gate-drive optocoupler or bootstrap supply should be placed within 2 cm of the gate pin to minimize the gate-loop area.
Compliance Information
RoHS compliant per Infineon product page. AEC-Q100 not applicable (this is an industrial/consumer IGBT, not automotive-qualified). The ATMA1 suffix indicates lead-free and RoHS-compliant surface-mount packaging.
