MRF6S27085HSR5 - 20W 2.66GHz RF Power LDMOS | NXP
MPN: MRF6S27085HSR5 ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $87.5 | $875.00 |
| 50 | $79.2 | $3,960.00 |
| 100 | $72.8 | $7,280.00 |
| 500 | $64.5 | $32,250.00 |
MRF6S27085HSR5 Overview
An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor FET optimized for high-power radio-frequency amplification. LDMOS technology is the dominant building block of modern wireless infrastructure base stations, occupying the role: RF power transistor -> discrete RF semiconductor -> power amplifier device -> wireless infrastructure component. Compared to bipolar and GaAs alternatives, LDMOS offers the best balance of power density, efficiency, cost, and ruggedness for sub-3 GHz cellular bands.
Key features of the MRF6S27085HSR5 include 15.5 dB typical gain, 28V VDD operation, 68V drain-source voltage rating, 900 mA quiescent bias current, and Class AB/Class C compatibility for both WLL and multicarrier amplifier topologies. The device is also characterized for WiMAX and WiBro service profiles, giving designers a single part that covers several OFDM-based waveforms in the 2.6 GHz band.
Architecturally, the MRF6S27085HSR5 uses NXP's HV6 LDMOS process, which provides high breakdown voltage for 28V operation and integrated ESD protection. The NI-780S ceramic package with flanged leads is optimized for direct bolt-down to a copper or aluminum heatsink, minimizing thermal resistance from junction to case and enabling CW and pulsed modes without external cooling in well-engineered thermal designs.
Typical applications include 2.6 GHz CDMA/WCDMA base station power amplifiers, WiMAX and WiBro macro-cell transmitters, multicarrier amplifier modules for LTE band 38/41, and 2.7 GHz industrial/scientific RF links. Designers select this part when they need a proven, mature 28V LDMOS in a rugged flanged ceramic package for outdoor or remote radio head deployments.
Design consideration: bias sequencing must gate the drain voltage with the gate bias to avoid destructive turn-on transients; follow NXP's HV6 family application note for the recommended sequencing and over-voltage protection circuitry. Thermal design must also account for Pdiss of roughly (VDD - V knee) * I, with adequate bolt-down torque on the flange to maintain the datasheet thermal resistance.
This page synthesizes distributor pricing, drop-in alternatives, parametric comparisons, and practical RF amplifier design notes that are not consolidated in any single manufacturer datasheet, accelerating part selection and PCB-to-PCB thermal planning for 2.6 GHz infrastructure designers.
Drop-in alternatives for MRF6S27085HSR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF6S27085NBR1
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF6S27085HSR1
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF6S27085NR1
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
AFT27S010NR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
BLF7G27L-100P
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6S27085HSR5 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors |
| Transistor Type | LDMOS (RF Power FET) |
| Frequency | 2.66 GHz (2600-2700 MHz) |
| Gain | 15.5 dB (typical at 2.66 GHz) |
| Output Power (Pout) | 20 W average |
| Drain Voltage (VDD) | 28 V |
| Drain-Source Voltage Rating | 68 V |
| Quiescent Current (IDQ) | 900 mA |
| Test Current | 900 mA |
| Test Voltage | 28 V |
| Package / Case | NI-780S |
| Supplier Device Package | NI-780S |
| Mounting Type | Chassis / Flange Mount |
| Technology | HV6 LDMOS |
| Application Band | CDMA / WiMAX / WiBro / Multicarrier |
| Operating Class | Class AB / Class C |
| Channel | N-Channel |
| Part Status | Obsolete |
MRF6S27085HSR5 ni-780s Pin Configuration Guide
Pin configuration for MRF6S27085HSR5 (ni-780s package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for MRF6S27085HSR5.
Refer to the datasheet for full pin configuration.
Safe Operating Area (DC) - MRF6S27085HSR5
Typical Applications
MRF6S27085HSR5 is suitable for 6 applications: CDMA Base Station Power Amplifier (2600-2700 MHz), WiMAX / WiBro Multicarrier Transmitter, LTE Band 38/41 Macro-Cell PA Module, WLL (Wireless Local Loop) Class C PA, Industrial / Scientific 2.7 GHz RF Link, Public-Safety / Private LTE Repeater.
CDMA Base Station Power Amplifier (2600-2700 MHz)
The MRF6S27085HSR5 is the canonical final-stage LDMOS for 2.6 GHz CDMA base station power amplifiers, delivering 20W output with 15.5 dB gain under IS-95 N-CDMA test conditions per the datasheet. Its 28V VDD operation matches standard BTS PA supply rails, while the NI-780S ceramic flange enables direct bolt-down to a copper spreader for thermal management. Designers use this part in Class AB linear mode with 900 mA quiescent current to meet the ACPR and EVM requirements of CDMA pilots and traffic channels. Compared to switching PAs, the LDMOS linearity at 20W remains high enough for multicarrier operation without excessive digital predistortion.
Recommended
WiMAX / WiBro Multicarrier Transmitter
The MRF6S27085HSR5 supports WiMAX and WiBro multicarrier amplifier (MCA) applications in the 2.5-2.7 GHz band, where OFDM signals demand high linearity and the datasheet characterizes the device explicitly under these waveforms. Its 15.5 dB gain at 2.66 GHz and 20W average output make it well suited as a final-stage PA or as a driver for higher-power LDMOS in a Doherty chain. The 900 mA quiescent bias point keeps the device in linear Class AB operation, preserving the low EVM that WiMAX/MC-CDMA links require. The HV6 LDMOS process also handles the high peak-to-average ratio of OFDM without compression-induced spectral regrowth.
Recommended
LTE Band 38/41 Macro-Cell PA Module
For 4G LTE deployments in TDD bands 38 (2570-2620 MHz) and 41 (2496-2690 MHz), the MRF6S27085HSR5 is a drop-in final-stage LDMOS in macro-cell remote radio heads. Its 20W output matches typical 4x4x4 MIMO RRH power-per-antenna requirements, while the NI-780S flange handles the continuous thermal load of TDD downlink bursts at elevated ambient. Designers can use this part in a symmetric Doherty configuration with a peaking amplifier from the same NXP family to boost efficiency into the 40%+ range. The 28V bias point is standard across macro BTS designs, simplifying power supply design.
Recommended
WLL (Wireless Local Loop) Class C PA
The MRF6S27085HSR5 is rated for Class C operation in WLL applications, where constant-envelope signals allow the device to be biased below pinch-off for maximum drain efficiency. At 2.66 GHz with 28V VDD, the part delivers high DC-to-RF efficiency suitable for subscriber station transmitters serving rural or fixed-wireless customers. The NI-780S package's low thermal resistance keeps junction temperature within safe limits even at continuous CW operation in Class C. Designers benefit from the part's 68V drain breakdown voltage, which provides comfortable margin for Class C supply rail transients.
Recommended
Industrial / Scientific 2.7 GHz RF Link
The 2.6-2.7 GHz band hosts several industrial-scientific-medical (ISM-adjacent) RF links, and the MRF6S27085HSR5 serves as a 20W final stage for long-range telemetry, SCADA backhaul, and point-to-point industrial wireless links. Its CDMA-characterized ruggedness provides tolerance to high VSWR mismatches typical of long cable feeds in industrial environments. The flanged ceramic package simplifies integration into sealed outdoor enclosures with conductive-cooling heatsinks. Designers pair it with circulator-isolator load protection to survive antenna fault conditions.
Recommended
Public-Safety / Private LTE Repeater
Private LTE and public-safety networks (FirstNet, ESN) operating in 2.6 GHz spectrum benefit from the MRF6S27085HSR5 as a final PA in vehicle-mounted and fixed repeater amplifiers. The part's proven HV6 LDMOS reliability and 20W continuous-duty rating are well matched to the high-talk-time demands of public-safety dispatch channels. Its 15.5 dB gain chain simplifies the drive-stage design, while the NI-780S flange allows bolt-down to aluminum chassis for vibration-tolerant mobile installations. The part's 68V breakdown provides headroom against load-pulled VSWR peaks in vehicular antennas.
Recommended
Recommended Products Summary
Engineering reference data for MRF6S27085HSR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF6S27085NBR1 | MRF6S27085HSR1 | MRF6S27085NR1 | AFT27S010NR5 | BLF7G27L-100P |
|---|---|---|---|---|---|---|
| Package | NI-780S | NI-780S (same) | NI-780S (same) | NI-780S (same) | NI-780S-2 family (same flange footprint) | SOT502A flange (same NI family) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Frequency | 2.66 GHz (2600-2700 MHz) | 2.66 GHz | 2.66 GHz | 2.66 GHz | 2.7 GHz | 2.6-2.7 GHz |
| Output Power | 20 W avg | 20 W avg | 20 W avg | 20 W avg | 10 W (Doherty-optimized) | 100 W |
| Gain | 15.5 dB | 15.5 dB | 15.5 dB | 15.5 dB | 14 dB (Doherty) | 16 dB |
| VDD | 28 V | 28 V | 28 V | 28 V | 32-50 V (Doherty) | 28 V |
| Drain-Source Voltage Rating | 68 V | 68 V | 68 V | 68 V | 100 V | 65 V |
| Lifecycle Status | Obsolete | Active | Obsolete | Active | Active | Active |
Key Differentiators
- Mature, datasheet-rich 28V HV6 LDMOS with extensive CDMA/WiMAX characterization (vs AFT27S010NR5)
- Same NI-780S flange package as the active MRF6S27085NBR1, enabling PCB reuse (vs BLF7G27L-100P)
- Class AB/Class C flexibility at the same 28V/900mA bias (vs AFT27S010NR5)
Design Notes
Estimated: at 20W RF output with PAE ~33% the MRF6S27085HSR5 dissipates roughly 40W DC in the NI-780S flange. Junction-to-case thermal resistance is typically under 1 C/W per the HV6 family datasheet, so a well-bolted heatsink with thermal compound is mandatory. Apply the datasheet-recommended mounting torque to keep thermal interface resistance at its rated minimum and avoid thermal runaway at high VSWR.
Do not exceed 68V drain-source voltage; always gate the drain supply with the gate bias during turn-on/off to avoid destructive dv/dt transients. For Class AB operation, hold gate bias before applying VDD and remove VDD before gate bias per NXP's HV6 family application note. Neglecting sequencing is the most common cause of LDMOS field failures.
The NI-780S package mounts via bolted flange to the heatsink; the PCB carries only gate and drain matching networks. Use a low-loss substrate such as Rogers RO4350B or RO4003C for the 2.6 GHz matching network. Keep gate and drain traces short and use 50-ohm coplanar waveguide with ground for the input/output transitions. Place bypass capacitors within 2 mm of the gate and drain leads.
Maintain 50-ohm impedance at the device leads; the NI-780S lead dimensions are specified for microstrip or stripline launch. Use multiple ground vias stitching the coplanar ground to the bottom ground plane to suppress parallel-plate modes. Isolate the input and output matching networks with a metal or printed shield wall to prevent feedback oscillation.
The MRF6S27085HSR5 is unconditionally stable in 50-ohm source/load but can oscillate under high-VSWR conditions if the matching network has poor out-of-band rejection. Add a small resistor (1-3 ohms) in series with the gate lead, or a parallel RC snubber, to damp sub-1 GHz resonances. Monitor for spurious output with a spectrum analyzer during bring-up.
Compliance Information
RoHS / REACH compliance status not present in the verified web data for this obsolete NXP part. AEC-Q100 not applicable (this is a discrete RF power transistor, not an automotive-qualified IC). Confirm compliance with NXP environmental documentation before designing into RoHS-restricted products.
