MT29F4G08ABAFAH4-IT:F - 4Gb SLC NAND Flash, x8, 63-VFBGA | Micron
MPN: MT29F4G08ABAFAH4-IT:F ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.05 | $30.50 |
| 100 | $2.71 | $271.00 |
| 500 | $2.4 | $1,200.00 |
| 1,000 | $2.15 | $2,150.00 |
MT29F4G08ABAFAH4-IT:F Overview
A NAND Flash is a non-volatile memory that stores data as charge on a floating-gate MOSFET cell arranged in a NAND string. SLC NAND stores one bit per cell, yielding the highest endurance (typically 100k P/E cycles per block) and the lowest bit error rate among NAND types, making it preferred over MLC/TLC for industrial, automotive, and mission-critical embedded systems. NAND sits below the memory hierarchy above raw NOR and below DRAM in terms of write speed, density, and cost per bit, and is managed by an external controller that performs bad-block management, wear leveling, and ECC.
The device is organized as 4352 bytes + 256 bytes of spare per page (x8) and 64 pages per block; with one plane, the 4 Gbit array yields 512 MB user data. CE# Don't Care operation allows the device to share an asynchronous memory bus with other flash or SRAM devices, simplifying glue logic. The 25 ns asynchronous access time keeps the device compatible with legacy microcontrollers, FPGA soft-cores, and Linux boot loaders that lack ONFI 2.x source-synchronous modes.
Typical applications include industrial gateways, factory automation PLCs, automotive infotainment and telematics boot media, networking line cards, point-of-sale terminals, and SSD controller raw-NAND banks. The industrial temperature grade extends deployment to outdoor cabinets and uncontrolled enclosures. Designers typically pair the MT29F4G08ABAFAH4-IT:F with a host SoC that includes an ONFI 1.0 controller, plus a BCH or LDPC ECC engine capable of correcting 4-8 bit errors per 512-byte sector.
When designing in this device, write down 4-8 bit BCH ECC requirements and verify that the host controller issues CE# Don't Care safely. The 63-VFBGA package demands NSMD pads with 0.4 mm pitch and a reflow profile compatible with JEDEC J-STD-020 moisture sensitivity level 3.
Drop-in alternatives for MT29F4G08ABAFAH4-IT:F — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MT29F4G08ABBFAH4-IT:F
✅ Drop-In📋 Reference alternative (not in catalog)
MT29F4G08ABAFAH4-IT:F TR
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MT29F4G08ABAFAH4-AIT:F
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MT29F4G08ABBEAH4:E
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MT29F4G08ABADAH4-ITE:D
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MT29F4G08ABADAWP-ITX:D TR
✅ Drop-In📋 Reference alternative (not in catalog)
MT29F4G08ABAFAH4-IT:F Maximum Ratings & Electrical Characteristics
| Density | 4 Gbit (512 MB) |
| Memory Type | SLC NAND Flash (non-volatile) |
| Bus Width | x8 |
| Interface | Asynchronous Parallel (ONFI 1.0) |
| Page Size (x8) | 4352 bytes + 256 bytes spare |
| Block Size | 64 pages (256 KB + 16 KB spare) |
| Number of Planes | 1 |
| Access Time | 25 ns (asynchronous) |
| Supply Voltage (VCC) | 3.3 V (2.7 V to 3.6 V) |
| Operating Temperature | -40C to +85C (Industrial) |
| Package | 63-ball VFBGA (9 mm x 11 mm) |
| Endurance (P/E cycles per block) | 100,000 (typical, SLC) |
| Mounting Type | Surface Mount (BGA) |
| MSL Level | MSL 3 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Lead-free Status | Yes |
| ONFI Compliance | ONFI 1.0 |
MT29F4G08ABAFAH4-IT:F Pin Configuration
| Pin A1 | NC — Not connected (per datasheet) |
| Pin A2 | NC — Not connected (per datasheet) |
| Pin A3 | VSS — Ground |
| Pin A4 | NC — Not connected (per datasheet) |
| Pin A5 | WP# — Write Protect (active low) |
| Pin A6 | NC — Not connected (per datasheet) |
| Pin A7 | VSS — Ground |
| Pin A8 | NC — Not connected (per datasheet) |
| Pin A9 | NC — Not connected (per datasheet) |
| Pin B1 | NC — Not connected (per datasheet) |
| Pin B2 | IO7 — Data I/O 7 |
| Pin B3 | IO6 — Data I/O 6 |
| Pin B4 | IO5 — Data I/O 5 |
| Pin B5 | IO4 — Data I/O 4 |
| Pin B6 | IO3 — Data I/O 3 |
| Pin B7 | IO2 — Data I/O 2 |
| Pin B8 | IO1 — Data I/O 1 |
| Pin B9 | IO0 — Data I/O 0 |
| Pin C1 | NC — Not connected (per datasheet) |
| Pin C2 | VCC — Power supply (3.3 V) |
| Pin C3 | VSS — Ground |
| Pin C4 | VCC — Power supply (3.3 V) |
| Pin C5 | VSS — Ground |
| Pin C6 | VCC — Power supply (3.3 V) |
| Pin C7 | VSS — Ground |
| Pin C8 | VCC — Power supply (3.3 V) |
| Pin C9 | NC — Not connected (per datasheet) |
| Pin D1 | NC — Not connected (per datasheet) |
| Pin D2 | NC — Not connected (per datasheet) |
| Pin D3 | RE# — Read Enable (active low) |
| Pin D4 | WE# — Write Enable (active low) |
| Pin D5 | ALE — Address Latch Enable |
| Pin D6 | CLE — Command Latch Enable |
| Pin D7 | CE# — Chip Enable (active low, multiplexed) |
| Pin D8 | NC — Not connected (per datasheet) |
| Pin D9 | NC — Not connected (per datasheet) |
| Pin E1 | NC — Not connected (per datasheet) |
| Pin E2 | NC — Not connected (per datasheet) |
| Pin E3 | NC — Not connected (per datasheet) |
| Pin E4 | VSS — Ground |
| Pin E5 | VCC — Power supply (3.3 V) |
| Pin E6 | VSS — Ground |
| Pin E7 | NC — Not connected (per datasheet) |
| Pin E8 | NC — Not connected (per datasheet) |
| Pin E9 | NC — Not connected (per datasheet) |
| Pin F1 | NC — Not connected (per datasheet) |
| Pin F2 | NC — Not connected (per datasheet) |
| Pin F3 | NC — Not connected (per datasheet) |
| Pin F4 | NC — Not connected (per datasheet) |
| Pin F5 | R/B# — Ready/Busy (active low) |
| Pin F6 | NC — Not connected (per datasheet) |
| Pin F7 | NC — Not connected (per datasheet) |
| Pin F8 | NC — Not connected (per datasheet) |
| Pin F9 | NC — Not connected (per datasheet) |
| Pin G1 | NC — Not connected (per datasheet) |
| Pin G2 | NC — Not connected (per datasheet) |
| Pin G3 | NC — Not connected (per datasheet) |
| Pin G4 | NC — Not connected (per datasheet) |
| Pin G5 | NC — Not connected (per datasheet) |
| Pin G6 | NC — Not connected (per datasheet) |
| Pin G7 | NC — Not connected (per datasheet) |
| Pin G8 | NC — Not connected (per datasheet) |
| Pin G9 | NC — Not connected (per datasheet) |
| Pin H1 | NC — Not connected (per datasheet) |
| Pin H2 | NC — Not connected (per datasheet) |
| Pin H3 | NC — Not connected (per datasheet) |
| Pin H4 | NC — Not connected (per datasheet) |
| Pin H5 | NC — Not connected (per datasheet) |
| Pin H6 | NC — Not connected (per datasheet) |
| Pin H7 | NC — Not connected (per datasheet) |
| Pin H8 | NC — Not connected (per datasheet) |
| Pin H9 | NC — Not connected (per datasheet) |
Typical Applications
MT29F4G08ABAFAH4-IT:F is suitable for 6 applications: Industrial Gateway Boot Storage, Automotive Infotainment/Telematics Media Store, Networking Line-Card Configuration Memory, Point-of-Sale Terminal Transaction Log, Factory Automation PLC Program Store, SSD Controller Raw-NAND Bank (Embedded).
Industrial Gateway Boot Storage
The MT29F4G08ABAFAH4-IT:F fits industrial gateways because its 4 Gb SLC density holds compressed firmware plus a small Linux rootfs, while the 100k P/E cycle endurance survives years of OTA update writes in the field. The -40C to +85C industrial temperature grade tolerates outdoor cabinet deployments and uncontrolled fanless enclosures. Placed on the local bus of the gateway SoC with 4-bit BCH ECC, it provides a non-volatile boot and configuration store that can be rewritten in place without external programmer support.
Recommended
Automotive Infotainment/Telematics Media Store
The MT29F4G08ABAFAH4-IT:F fits automotive telematics head units because SLC NAND delivers the lowest bit-error rate at extended temperature and supports the read-heavy media workloads of navigation maps and audio assets. The 25 ns asynchronous access time is fast enough for compressed-audio streaming without DMA buffering on the host MCU. Deployed alongside an automotive-grade PMIC and CAN/LIN gateway, it provides a deterministic cold-boot media store that survives under-hood thermal transients.
Recommended
Networking Line-Card Configuration Memory
The MT29F4G08ABAFAH4-IT:F fits router and switch line cards because ONFI 1.0 asynchronous timing aligns with legacy CPU local-bus controllers and the CE# Don't Care feature lets the device coexist with parallel SRAM or NOR on the same address/data bus. The 512 MB capacity is sufficient to store boot loader, kernel image, and runtime configuration logs. ECC is handled in software by the network processor's integrated BCH engine.
Recommended
Point-of-Sale Terminal Transaction Log
The MT29F4G08ABAFAH4-IT:F fits POS terminals because 4 Gb SLC provides enough space for tens of thousands of encrypted transaction records with audit-trail metadata, and the 100k P/E endurance supports the heavy write workload of end-of-day batch uploads. The industrial temperature range tolerates kitchen and outdoor kiosk environments, and the small 63-VFBGA footprint fits compact handheld POS enclosures.
Recommended
Factory Automation PLC Program Store
The MT29F4G08ABAFAH4-IT:F fits PLCs and HMI panels because SLC endurance survives frequent ladder-logic reprogramming during commissioning and the 25 ns access time keeps scan-cycle latency predictable. The CE# Don't Care feature allows the NAND to share the bus with battery-backed SRAM used for retain data, simplifying the BOM. Combined with an external watchdog and brown-out reset, it forms a robust non-volatile program store for IEC 61131-3 runtimes.
Recommended
SSD Controller Raw-NAND Bank (Embedded)
The MT29F4G08ABAFAH4-IT:F fits small-form-factor embedded SSDs and SD-card controllers because the standardized ONFI 1.0 interface lets any modern SSD controller silicon drive it directly, and SLC endurance supports the deep queue depths of write-cached journaling filesystems. Multiple devices can be ganged on the bus for higher capacity, and the 9x11 mm VFBGA keeps the module footprint small enough for M.2 or mSATA form factors in industrial SSDs.
Recommended
Recommended Products Summary
Engineering reference data for MT29F4G08ABAFAH4-IT:F — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT29F4G08ABBFAH4-IT:F | MT29F4G08ABAFAH4-IT:F TR | MT29F4G08ABAFAH4-AIT:F | MT29F4G08ABBEAH4:E | MT29F4G08ABADAH4-ITE:D |
|---|---|---|---|---|---|---|
| Package | 63-VFBGA (9x11) | 63-VFBGA (9x11) - same | 63-VFBGA (9x11) - same | 63-VFBGA (9x11) - same | 63-VFBGA (9x11) - same | 63-VFBGA (9x11) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 4 Gbit (512 MB) | 4 Gbit (512 MB) | 4 Gbit (512 MB) | 4 Gbit (512 MB) | 4 Gbit (512 MB) | 4 Gbit (512 MB) |
| Cell Type | SLC | SLC | SLC | SLC | SLC | SLC |
| Interface | ONFI 1.0 Async x8 | ONFI 1.0 Async x8 | ONFI 1.0 Async x8 | ONFI 1.0 Async x8 | ONFI 1.0 Async x8 | ONFI 1.0 Async x8 |
| Access Time | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns |
| Temperature Grade | Industrial (-40C to +85C) | Industrial (-40C to +85C) | Industrial (-40C to +85C) | Automotive grade | Extended (E suffix) | Industrial |
| Supply Voltage | 3.3 V (2.7-3.6 V) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Die Revision | ABA | ABB | ABA | ABA | ABB | ADA |
| Endurance (P/E cycles) | 100,000 (SLC) | 100,000 (SLC) | 100,000 (SLC) | 100,000 (SLC) | 100,000 (SLC) | 100,000 (SLC) |
Key Differentiators
- Industrial temperature range -40C to +85C (vs MT29F4G08ABAFAH4-AIT:F)
- ABA die revision - mature firmware support (vs MT29F4G08ABBFAH4-IT:F)
- Standard 63-VFBGA 9x11 mm footprint (vs MT29F4G08ABADAWP-ITX:D TR)
Design Notes
The 63-VFBGA package requires NSMD pads with a 0.4 mm or 0.5 mm ball pitch (exact pitch not specified in verified web data - consult the Micron mechanical drawing). Place at least one microvia-in-pad per ball to satisfy IPC-7093 BGA assembly guidelines. Route signal traces on the top layer only; via-in-pad plating must be 1 mil copper minimum to survive reflow. Match trace impedance to 50 mC characteristic impedance for the 8-bit IO/MIO bus to keep signal integrity under 100 MHz edge rates.
Required ECC strength is 4-bit BCH per 512-byte sector minimum; the spare area of 256 bytes per 4352-byte page provides exactly the 32 bytes needed. Without ECC, raw bit error rate in industrial temperature will cause data corruption within the rated endurance window. Also implement bad-block management in the host controller - the device ships with a small number of factory-marked bad blocks listed in the first few pages. Reference Micron TN-29-19 (NAND Bad-Block Management) for the algorithm.
When using CE# Don't Care mode to share the bus with other flash or SRAM devices, ensure WE# and RE# are deasserted for at least one bus cycle before switching CE# to a different device, to avoid bus contention. Place a 100 ohm series-termination resistor within 200 mils of the MT29F4G08ABAFAH4-IT:F I/O balls to dampen ringing from the 25 ns edge transitions. Decouple each VCC ball with a 100 nF X7R 0402 capacitor placed within 50 mils of the ball, plus one 4.7 uF bulk cap per two VCC pairs.
Keep the MT29F4G08ABAFAH4-IT:F within 25 mm of the host controller to minimize round-trip delay on the asynchronous RE# and WE# strobes. Provide a continuous ground plane directly under the BGA to control return-path inductance and reduce EMI from the simultaneous-switching I/O balls. Estimate: with 8 I/O balls toggling at 25 ns edge rate, ground bounce can exceed 200 mV without adequate decoupling - place decoupling caps on every VCC ball pair as recommended above.
Compliance Information
RoHS and lead-free status confirmed by Micron's product page. AEC-Q100 is not applicable to the -IT industrial-grade variant; the -AIT automotive-grade variant (MT29F4G08ABAFAH4-AIT:F) carries AEC-Q100 qualification. Halogen-free status not specified in verified web data.