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Micron Technology

MT65B12G16080A00QG-92:A - 24GB HBM3E 2.3GHz X1088 WFPGA | Micron

MPN: MT65B12G16080A00QG-92:A ✓ Active
In Stock Ships in 1-3 business days
WFPGA (wafer-level stacked package) Package HBM3E (High Bandwidth Memory 3E) Memory
From $1495 USD / Unit
MOQ: 1 |
Price updated: 2026-10-04
Volume Pricing
Qty Unit Price Extended
1 $1850 $1,850.00
10 $1720 $17,200.00
100 $1620 $162,000.00
500 $1550 $775,000.00
1,000 $1495 $1,495,000.00
ℹ️ All prices are in USD

MT65B12G16080A00QG-92:A Overview

The Micron MT65B12G16080A00QG-92:A is a 24 GB HBM3E (High Bandwidth Memory 3E) stacked DRAM device organized as X1088 with a 2.3 GHz data-rate specification, supplied in a WFPGA package. It is the latest generation of Micron's HBM family targeted at AI accelerators, GPU compute dies, and high-performance computing SoCs that require terabyte-per-second aggregate bandwidth from a compact, vertically stacked memory sub-system.

HBM (High Bandwidth Memory) is a JEDEC-standardized 3D-stacked DRAM architecture that places multiple DRAM dies atop a base logic die through TSV (Through-Silicon Via) interconnects. It belongs to the wider hierarchy: stacked DRAM -> graphics DRAM -> volatile memory -> semiconductor memory. Compared with conventional GDDR, HBM uses a wide 1024-bit per stack interface and a 3D package to deliver far higher bandwidth at lower power-per-bit, making it the preferred memory for AI training and inference engines.

Key specifications for this part include a 24 GB density per stack, an X1088 channel organization, a 2.3 GHz effective data rate, a wide I/O interface, and operation over the standard HBM3E voltage range. The WFPGA package integrates the stacked die and the base logic die into a single customer-facing footprint that mates to a host accelerator or GPU silicon through a fine-pitch BGA-style interconnect.

Architecturally, HBM3E increases per-pin data rates and tightens timing margins over HBM3, while keeping the same 1024-bit interface per stack and the same channel/row-bank structure. The device is used in multi-stack configurations (typically 4H, 6H, 8H, or 12H) to scale bandwidth up to roughly 1 TB/s and beyond, with independent channels allowing concurrent read/write across multiple processing units.

Typical applications include AI/ML training accelerators (NVIDIA H200-class GPUs, custom ASICs), high-end inference platforms, HPC simulation, and advanced graphics. The 24 GB density per stack enables very large model weights to be co-located with compute, reducing off-chip traffic. When designing with this device, follow JEDEC HBM3E thermal and signal-integrity guidelines, including controlled-impedance routing, decoupling, and a heatsink or cold-plate to manage the high sustained bandwidth power profile.

Drop-in alternatives for MT65B12G16080A00QG-92:A — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

MT65B12G16080A00QG-92:A.TR

✅ Drop-In
📦 WFPGA
same 24GB HBM3E X1088 2.3GHz die in WFPGA; reel/traceability suffix only

📋 Reference alternative (not in catalog)

MT65B12G16080A00QG-92:B

✅ Drop-In
📦 WFPGA
same 24GB HBM3E X1088 2.3GHz WFPGA; silicon revision B vs A (no parametric change)

📋 Reference alternative (not in catalog)

MT65B12G16080A00QG-60:A

✅ Drop-In
📦 WFPGA
same 24GB X1088 WFPGA, data rate 1.5GHz vs 2.3GHz (-35%); same JEDEC HBM3E bus

📋 Reference alternative (not in catalog)

MT65B12G16080A00QG-60:B

✅ Drop-In
📦 WFPGA
same 24GB X1088 WFPGA, 1.5GHz data rate, silicon revision B

📋 Reference alternative (not in catalog)

MT65B12G16080A00QG-92:A Maximum Ratings & Electrical Characteristics

Memory Type HBM3E (High Bandwidth Memory 3E)
Density per Stack 24 GB
Organization X1088
Data Rate 2.3 GHz
Interface Width per Stack 1024-bit (HBM3E standard)
Number of Channels per Stack 16 channels (HBM3E standard)
Package WFPGA (wafer-level stacked package)
3D Stack Architecture Multi-die DRAM stack with TSV on base logic die
JEDEC Standard JEDEC HBM3E
RoHS Status Compliant (per Micron product page)
Lead-Free Yes
Mounting Type Surface Mount (interposer / BGA attach)
Application AI/ML training & inference, HPC, GPU memory

MT65B12G16080A00QG-92:A wfpga (wafer-level stacked package) Pin Configuration Guide

Pin configuration for MT65B12G16080A00QG-92:A (wfpga (wafer-level stacked package) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

wfpga (wafer-level stacked package) package pinout diagram for MT65B12G16080A00QG-92:A

No detailed pinout data available for MT65B12G16080A00QG-92:A.

Refer to the datasheet for full pin configuration.

Typical Applications

MT65B12G16080A00QG-92:A is suitable for 6 applications: AI Training Accelerator Memory, GPU and Discrete Graphics Memory, High-Performance Computing (HPC) Nodes, Large Language Model Inference Platforms, AI Inference Edge Servers, Datacenter Memory Tier for Custom ASICs.

🖥️

AI Training Accelerator Memory

The MT65B12G16080A00QG-92:A fits AI training accelerators as the primary stacked DRAM, where its 24 GB density and 2.3 GHz HBM3E data rate deliver the per-stack bandwidth needed to feed large parameter-server updates without off-chip traffic. Compared to GDDR6X, the 1024-bit interface and 3D-stacked WFPGA package lower power-per-bit and shorten on-chip routing. Designers typically deploy 4H to 8H stacks to reach 1+ TB/s aggregate bandwidth for transformer training.

📺

GPU and Discrete Graphics Memory

In high-end GPU and discrete graphics designs, the MT65B12G16080A00QG-92:A acts as the framebuffer-equivalent HBM3E stack. The 24 GB capacity supports high-resolution textures and large ray-tracing BVH structures, while the 2.3 GHz rate over 16 channels maintains frame throughput at 4K/8K. The WFPGA package mounts via silicon interposer to the GPU die, minimizing PHY-to-memory distance and reducing signal-integrity challenges.

🏭

High-Performance Computing (HPC) Nodes

HPC nodes for simulation, scientific computing, and large-model serving deploy the MT65B12G16080A00QG-92:A to deliver sustained memory bandwidth for sparse-matrix and stencil kernels. The JEDEC HBM3E compliance and 1024-bit interface per stack simplify host ASIC integration, while the 24 GB capacity enables larger working sets per node. Thermal design must account for the bandwidth-dependent power envelope; cold-plate cooling is standard at the 2.3 GHz bin.

🧩

Large Language Model Inference Platforms

LLM inference platforms benefit from the MT65B12G16080A00QG-92:A's 24 GB capacity, which holds substantial slices of multi-billion-parameter models in a single stack and reduces DRAM-to-compute hops. The 2.3 GHz HBM3E data rate sustains token-generation throughput at low latency. Multi-stack configurations (6H, 8H) scale capacity and bandwidth proportionally, fitting into accelerator ASICs validated against Micron's HBM3E PHY.

🌐

AI Inference Edge Servers

For edge-server AI inference, the MT65B12G16080A00QG-92:A offers a 24 GB HBM3E stack in WFPGA that pairs with inference ASICs needing more bandwidth than LPDDR5X can deliver. Designers may choose the lower-speed 1.5 GHz bin for power-constrained edge SKUs and still benefit from the JEDEC HBM3E wide interface. Mechanical integration follows standard HBM3E interposer guidelines from Micron's HBM3E datasheet.

⚡

Datacenter Memory Tier for Custom ASICs

Custom AI ASICs in datacenter deployments adopt the MT65B12G16080A00QG-92:A as their main memory tier, leveraging the 2.3 GHz HBM3E bandwidth to feed thousands of MAC units per cycle. The WFPGA package integrates cleanly into 2.5D silicon-interposer substrates alongside the host die, while the JEDEC-compliant interface shortens validation cycles. Stack counts of 4H to 12H tune aggregate bandwidth and capacity to the ASIC's target workload.

Recommended Products Summary

MT65B12G16080A00QG-60:A Lower-speed 1.5GHz HBM3E alternative stack Used in: AI Training Accelerator Memory, GPU and Discrete Graphics Memory, AI Inference Edge Servers MT65B12G16080A00QG-92:B Silicon-rev B variant of same 2.3GHz stack Used in: AI Training Accelerator Memory, Large Language Model Inference Platforms MT65B12G16080A00QG-92:A.TR Same 2.3GHz stack, reel packaging variant Used in: High-Performance Computing (HPC) Nodes MT65B12G16080A00QG-60:B Rev B 1.5GHz variant for second source Used in: Datacenter Memory Tier for Custom ASICs
What is the MT65B12G16080A00QG-92:A?
The MT65B12G16080A00QG-92:A is a Micron 24 GB HBM3E stacked DRAM device organized as X1088 at a 2.3 GHz data rate, supplied in a WFPGA package. According to Micron's HBM3E part catalog, it is targeted at AI accelerators, GPUs, and HPC platforms requiring terabyte-per-second memory bandwidth.
What is the density and data rate of MT65B12G16080A00QG-92:A?
Per Micron's HBM3E catalog entry, the MT65B12G16080A00QG-92:A provides 24 GB of HBM3E capacity per stack at a 2.3 GHz effective data rate. The X1088 organization denotes the channel/IO configuration; the wide 1024-bit interface per stack is the standard HBM3E bus width defined by JEDEC.
What package does MT65B12G16080A00QG-92:A use?
The MT65B12G16080A00QG-92:A ships in a WFPGA wafer-level stacked package that integrates the DRAM dies and base logic die. The package mounts via a fine-pitch BGA-style interconnect to the host accelerator or GPU interposer, not via standard PCB-only soldering.
Where can I download the MT65B12G16080A00QG-92:A datasheet PDF?
The official MT65B12G16080A00QG-92:A datasheet and product detail are available from Micron's HBM3E part catalog at micron.com/products/memory/hbm/hbm3e/part-catalog. Micron distributes the detailed specification under NDA; contact your Micron field representative for full access to the HBM3E datasheet PDF.
What is the pinout of MT65B12G16080A00QG-92:A?
The MT65B12G16080A00QG-92:A pinout is defined by the WFPGA BGA-style ball map and is documented in the Micron HBM3E datasheet. Because HBM is attached to a host ASIC/GPU through a silicon interposer or organic substrate, the customer-visible pinout is system-specific; consult the Micron datasheet and your ASIC/GPU vendor's integration guide for the exact ball map.
Is MT65B12G16080A00QG-92:A in stock and where can I buy it?
Distributor listings on Censtry, LoveChip, HSSL Technologies, and Avaq indicate the MT65B12G16080A00QG-92:A is currently offered with confirmed stock as of 2026-10-05. Pricing is quote-based at this density and speed grade; lead time is typically 6-12 weeks. Stock is limited because HBM3E is allocated primarily to Tier-1 accelerator and GPU programs.
What is the price of MT65B12G16080A00QG-92:A?
The MT65B12G16080A00QG-92:A is a quote-only HBM3E part with no public MSRP. As of 2026-10-05, distributor pages show indicative single-unit pricing in the high-hundreds to mid-thousands USD range; volume pricing requires an RFQ. HBM3E pricing is tier-sensitive and depends on customer allocation.
What is the lead time for MT65B12G16080A00QG-92:A?
Micron HBM3E parts including the MT65B12G16080A00QG-92:A typically carry 6-12 week lead times as of 2026-10-05. Lead times can extend during AI-driven demand peaks; confirmed lead time should be obtained via RFQ from an authorized Micron distributor or your Micron sales representative.
What is the difference between MT65B12G16080A00QG-92:A and the -60 variant?
Both variants are 24 GB X1088 HBM3E stacks in WFPGA; the -92 variant specifies a 2.3 GHz data rate, while the -60 variant is the lower-speed 1.5 GHz grade listed by distributors. The -92 is the higher-bandwidth bin, the -60 is the lower-power/cost bin; they are not drop-in interchangeable at the system level because the host PHY must match the rated data rate.
Can SK Hynix or Samsung HBM3E replace MT65B12G16080A00QG-92:A?
No — Micron, SK Hynix, and Samsung HBM3E stacks are not drop-in compatible. Each vendor uses a proprietary base die, TSV pitch, and BGA ball map; even at the same JEDEC speed grade, the mechanical, thermal, and training sequences differ. Cross-vendor replacement requires host ASIC/GPU qualification with the specific vendor's HBM3E part number.
What is the best drop-in replacement for MT65B12G16080A00QG-92:A?
There is no drop-in pin-compatible alternative to the MT65B12G16080A00QG-92:A outside of Micron's own HBM3E family. Per Micron's part-catalog structure, only Micron MT65B-series parts share the WFPGA interface; cross-vendor SK Hynix/Samsung HBM3E parts require host-side re-qualification and are not drop-in substitutes.
MT65B12G16080A00QG-92:A vs MT65B12G16080A00QG-60:A — which is better for AI training?
For AI training workloads the MT65B12G16080A00QG-92:A is the better choice because its 2.3 GHz data rate delivers materially higher per-stack bandwidth than the 1.5 GHz -60 variant. Higher bandwidth reduces gradient-sync stalls and improves throughput on memory-bound transformer training; the -60 is preferable only for inference or cost-sensitive designs where the lower data rate is acceptable.
Is MT65B12G16080A00QG-92:A suitable for GPU memory in 2026 AI accelerators?
Yes — the MT65B12G16080A00QG-92:A is well suited to current-generation AI accelerators that integrate Micron HBM3E stacks at the 2.3 GHz speed grade. Its 24 GB per stack and JEDEC HBM3E compliance make it compatible with host ASICs/GPU designs specifically validated against Micron's HBM3E PHY. Verify your accelerator's Micron HBM3E qualification list before committing to volume.
When should I choose MT65B12G16080A00QG-92:A over HBM3 (non-E)?
Choose the MT65B12G16080A00QG-92:A (HBM3E) over HBM3 when you need the higher per-pin data rate and improved energy efficiency that HBM3E provides at the same 1024-bit interface. HBM3E typically delivers ~10-20% more bandwidth at similar stack densities, making it the preferred choice for new AI training and HPC designs in 2026.
What are the key specifications of MT65B12G16080A00QG-92:A that engineers should know?
The MT65B12G16080A00QG-92:A is a 24 GB HBM3E stacked DRAM in the X1088 organization with a 2.3 GHz data rate, supplied in a WFPGA package. It uses a 1024-bit interface per stack across 16 independent channels and complies with JEDEC HBM3E. Power dissipation is bandwidth-dependent and requires cold-plate or heatsink cooling in production accelerator designs.

Engineering reference data for MT65B12G16080A00QG-92:A — comparison, design guidance, and compliance information.

Selection Guide

Choose the MT65B12G16080A00QG-92:A when you need the highest per-stack HBM3E bandwidth from Micron in a 24 GB X1088 WFPGA and your host ASIC/GPU is qualified for the 2.3 GHz speed bin. Pick the -60:A or -60:B variant for cost-sensitive or power-constrained designs that can accept ~35% lower bandwidth. Use the .TR suffix for tape-and-reel assembly lines and the :B revision for second-source qualification. Cross-vendor SK Hynix or Samsung HBM3E parts are not drop-in — they require full host-side re-qualification.

Comparison with Alternatives

Parameter This Product MT65B12G16080A00QG-92:A.TR MT65B12G16080A00QG-92:B MT65B12G16080A00QG-60:A MT65B12G16080A00QG-60:B
Brand Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Package WFPGA WFPGA - same WFPGA - same WFPGA - same WFPGA - same
Density per Stack 24 GB 24 GB 24 GB 24 GB 24 GB
Data Rate 2.3 GHz 2.3 GHz 2.3 GHz 1.5 GHz (-35%) 1.5 GHz (-35%)
Organization X1088 X1088 X1088 X1088 X1088
JEDEC Standard HBM3E HBM3E HBM3E HBM3E HBM3E
Silicon Revision A A B A B
Per-Stack Bandwidth Class High (2.3 GHz) High (2.3 GHz) High (2.3 GHz) Standard (1.5 GHz) Standard (1.5 GHz)

Key Differentiators

  • Higher per-stack data rate vs lower-speed HBM3E bin (vs MT65B12G16080A00QG-60:A)
  • Drop-in compatible 2.3 GHz HBM3E alternative (vs MT65B12G16080A00QG-92:B)
  • Traceability / packaging variant at same speed grade (vs MT65B12G16080A00QG-92:A.TR)

Design Notes

Estimated: at the 2.3 GHz HBM3E bin the MT65B12G16080A00QG-92:A sustains bandwidth-dependent power dissipation well above conventional DRAM. In a 4H configuration the HBM subsystem can draw 60-100 W under training workloads; specify a cold-plate or high-performance heatsink and ensure junction temperature stays within the datasheet envelope. Always use Micron's HBM3E thermal model in your system-level simulation.

The WFPGA package must be co-designed with the host ASIC/GPU on a silicon interposer or organic substrate; PCB-only fan-out is not supported at HBM3E speeds. Maintain controlled-impedance routing for the 1024-bit interface and follow Micron's HBM3E channel-mapping guide for proper byte-lane training. Place decoupling per Micron reference layout to limit supply noise on VDDC/VDDQ.

At 2.3 GHz the HBM3E interface is extremely sensitive to channel skew and reflections. Use Micron's IBIS models for the WFPGA package, simulate worst-case corners, and budget crosstalk across adjacent channels. The 16 independent channels must each complete training before host traffic begins; ensure your PHY supports Micron HBM3E training sequences.

Do not assume the -92 and -60 HBM3E speed bins are interchangeable on the same host design — the host PHY must be configured for the rated data rate and timing parameters. Mixing bins across a multi-stack configuration causes training failures and link instability. Also verify the silicon revision (A vs B) is on your accelerator's Micron HBM3E qualified-vendor list before committing to volume.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS compliance per Micron HBM3E product page; AEC-Q100 not applicable for stacked DRAM. REACH and halogen-free status not stated in the verified data — left as unknown.

Data verified on: 2026-10-05 — data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Micron Technology MT65B12G16080A00QG-92:A HBM3E High Bandwidth Memory stacked DRAM JEDEC HBM3E WFPGA 1024-bit interface X1088 organization through-silicon via (TSV) AI accelerator GPU memory HPC memory tier large language model inference datacenter memory silicon interposer RoHS 2.3 GHz data rate 24 GB density 16-channel HBM
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