R1RW0416DSB-2LR#D0 - 4Mbit Async SRAM 12ns TSOP-II | Renesas
MPN: R1RW0416DSB-2LR#D0 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.85 | $5.85 |
| 10 | $5.32 | $53.20 |
| 100 | $4.62 | $462.00 |
| 500 | $4.1 | $2,050.00 |
| 1,000 | $3.65 | $3,650.00 |
R1RW0416DSB-2LR#D0 Overview
An asynchronous SRAM (Static Random Access Memory) is a type of volatile memory that uses bistable flip-flop memory cells, retaining stored data as long as power is applied without the need for periodic refresh. Within the broader semiconductor hierarchy, asynchronous SRAM falls under SRAM, then volatile memory, then memory ICs. Asynchronous SRAMs (also called "async SRAM" or "fast SRAM") are widely used in routers, industrial controllers, automotive subsystems, and networking line cards where deterministic low-latency random access is more important than density.
Key specifications include a maximum access time of 12 ns, a wide data bus width of 16 bits for high throughput, and operation over the full 3.0 V to 3.6 V commercial range. The -2LR suffix denotes the L grade (wide temperature range, -20C to +70C), 12 ns access, and TSOP-II packaging. The package is 44-pin TSOP-II (400-mil, 44P3W-H), making the part straightforward to route on multilayer PCBs that already host SDRAM or NOR-flash footprints.
The R1RW0416DSB-2LR#D0 is fabricated on a 0.18-micron-class CMOS process using Renesas' proven 6T cell architecture, which gives excellent soft-error immunity and read/write reliability. The 16-bit-wide data bus and 256 K x 16 organization enable a 64 Kbyte storage block with simple external address and chip-select decoding, making it a drop-in candidate for legacy systems originally designed around discrete FIFO or dual-port memory subsystems.
Typical applications include router/switch lookup tables, industrial PLC work memory, automotive infotainment/ADAS buffers, network processor local stores, and cache memory for embedded processors and DSPs. The 12 ns access time is well-matched to mid-range microcontrollers and ASIC engines that require single-cycle local memory access without the complexity of a synchronous controller.
When designing with this device, ensure that the 3.3 V supply rail is properly decoupled (0.1 uF ceramic close to each VCC/VSS pair) and respect the chip enable (/CE1, CE2) timing constraints. The wide-temperature L-grade variant is preferred for industrial and outdoor installations where ambient temperatures may exceed 70C. This page synthesizes Renesas datasheet specifications, distributor pricing, and drop-in pin-compatible 44-pin TSOP-II SRAM alternatives not always surfaced on manufacturer pages.
Drop-in alternatives for R1RW0416DSB-2LR#D0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
R1RW0416DSB-2LR#D1
✅ Drop-In📋 Reference alternative (not in catalog)
R1RW0416DSB-2PR#D0
✅ Drop-In📋 Reference alternative (not in catalog)
R1RW0416DSB-0PR#D0
✅ Drop-In📋 Reference alternative (not in catalog)
CY7C1041DV33-12ZSXI
✅ Drop-In📋 Reference alternative (not in catalog)
IS61WV25616FALL-12TLI
✅ Drop-In📋 Reference alternative (not in catalog)
R1RW0416DSB-2LR#D0 Maximum Ratings & Electrical Characteristics
| Memory Type | Asynchronous Fast SRAM (Async SRAM) |
| Memory Organization | 256 kword x 16-bit |
| Memory Density | 4 Mbit (512 Kbyte) |
| Interface | Parallel asynchronous (no clock) |
| Memory Cell Architecture | CMOS, 6-transistor (6T) cell |
| Access Time (tAA) | 12 ns (max) |
| Supply Voltage (VCC) | 3.0 V to 3.6 V |
| Operating Temperature Range | -20 C to +70 C (L grade, wide temperature) |
| Package | 44-pin TSOP-II (400-mil, 44P3W-H) |
| Mounting Type | Surface Mount |
| Output Enable Pin | Yes (/OE) |
| Chip Enable Pins | /CE1 (active low) and CE2 (active high) |
| Write Enable Pin | Yes (/WE) |
| Write Enable Control | Byte control: /LB, /UB |
| Data Bus Width | 16 bits |
| RoHS Status | Compliant |
| Lead-Free / Pb-Free | Yes |
| MSL Level | MSL3 (per JEDEC J-STD-020) |
R1RW0416DSB-2LR#D0 Pin Configuration
| Pin 1 | NC — Not connected (per datasheet pinout, Rev 2.00) |
| Pin 2 | A0 — Address input bit 0 |
| Pin 3 | A1 — Address input bit 1 |
| Pin 4 | A2 — Address input bit 2 |
| Pin 5 | A3 — Address input bit 3 |
| Pin 6 | A4 — Address input bit 4 |
| Pin 7 | CE2 — Chip enable 2 (active high) |
| Pin 8 | NC — Not connected (per datasheet pinout) |
| Pin 9 | NC — Not connected (per datasheet pinout) |
| Pin 10 | A5 — Address input bit 5 |
| Pin 11 | A6 — Address input bit 6 |
| Pin 12 | A7 — Address input bit 7 |
| Pin 13 | A8 — Address input bit 8 |
| Pin 14 | A9 — Address input bit 9 |
| Pin 15 | A10 — Address input bit 10 |
| Pin 16 | A11 — Address input bit 11 |
| Pin 17 | A12 — Address input bit 12 |
| Pin 18 | A13 — Address input bit 13 |
| Pin 19 | A14 — Address input bit 14 |
| Pin 20 | A15 — Address input bit 15 |
| Pin 21 | A16 — Address input bit 16 |
| Pin 22 | /UB — Upper byte enable (active low, byte write control) |
| Pin 23 | /LB — Lower byte enable (active low, byte write control) |
| Pin 24 | VSS — Ground |
| Pin 25 | I/O0 — Data I/O bit 0 |
| Pin 26 | I/O1 — Data I/O bit 1 |
| Pin 27 | I/O2 — Data I/O bit 2 |
| Pin 28 | I/O3 — Data I/O bit 3 |
| Pin 29 | I/O4 — Data I/O bit 4 |
| Pin 30 | I/O5 — Data I/O bit 5 |
| Pin 31 | I/O6 — Data I/O bit 6 |
| Pin 32 | I/O7 — Data I/O bit 7 |
| Pin 33 | I/O8 — Data I/O bit 8 |
| Pin 34 | I/O9 — Data I/O bit 9 |
| Pin 35 | I/O10 — Data I/O bit 10 |
| Pin 36 | I/O11 — Data I/O bit 11 |
| Pin 37 | I/O12 — Data I/O bit 12 |
| Pin 38 | I/O13 — Data I/O bit 13 |
| Pin 39 | I/O14 — Data I/O bit 14 |
| Pin 40 | I/O15 — Data I/O bit 15 |
| Pin 41 | /OE — Output enable (active low) |
| Pin 42 | VSS — Ground |
| Pin 43 | A17 — Address input bit 17 (highest address) |
| Pin 44 | /WE, /CE1 — Write enable (active low, dual function with /CE1 active low chip enable in this position per Ren datasheet Rev 2.00 pinout - check datasheet) |
Typical Applications
R1RW0416DSB-2LR#D0 is suitable for 6 applications: Router and Switch Lookup-Table Memory, Industrial PLC and Controller Work Memory, Automotive Infotainment and ADAS Buffer Memory, DSP and Embedded-Processor Local Cache Memory, Networking Line-Card Packet Buffer Memory, Medical Instrument Data-Logging Memory.
Router and Switch Lookup-Table Memory
The R1RW0416DSB-2LR#D0's 12 ns access time and 256K x 16 organization make it an ideal local lookup-table memory for fixed-configuration routers, switches, and firewalls. At 12 ns tAA, it can sustain single-cycle reads on an 80 MHz local bus without wait states, and its 16-bit-wide data path matches the bus width of typical NPUs and ASICs. Place the device on the address/data bus with /CE1 driven by chip-select decode logic and /OE timed by the read strobe; unlike SDRAM, no refresh controller or PLL training sequence is required, simplifying firmware and layout. The L-grade -20C to +70C range covers outdoor telecom cabinets.
Recommended
Industrial PLC and Controller Work Memory
In industrial PLCs and process controllers, the R1RW0416DSB-2LR#D0 provides 512 Kbyte of deterministic low-latency work memory for ladder-logic interpreters and scan buffers. The asynchronous interface avoids the refresh and burst-protocol overhead of SDRAM, ideal for deterministic cycle-time design. It pairs naturally with 32-bit MCUs by using two chips in parallel to deliver a 32-bit-wide 1 MB code/data memory. The wide -20C to +70C L-grade window keeps it inside the spec on machine-room floors where ambient may rise above 70C in summer.
Recommended
Automotive Infotainment and ADAS Buffer Memory
The R1RW0416DSB-2LR#D0's wide-temperature L-grade operation and 3.3 V single-rail design suit non-safety-critical automotive buffers in infotainment head units, instrument clusters, and ADAS domain-controller pre-processors. Its 16-bit-wide bus maps cleanly into NXP S32K-style MCU EBI interfaces, allowing 1 MB of code/data storage with only two chips. Designers should confirm that the application requires only commercial-grade -20C to +70C operation - true AEC-Q100 automotive builds need qualified parts and the -2LR is not AEC-Q100 qualified (note in compliance_info).
Recommended
DSP and Embedded-Processor Local Cache Memory
When used as local L1 cache or scratchpad memory for DSPs and ASIC cores, the R1RW0416DSB-2LR#D0's 12 ns access time aligns with single-cycle zero-wait-state performance up to 80 MHz on the local memory bus. The 6T CMOS cell architecture provides excellent read-disturb immunity, eliminating the refresh burden typical of SDRAM at small footprint. Designers can connect /CE1 to the chip-select output of the memory controller and /WE to the write strobe; the /LB and /UB byte enables enable 8-bit access to both the upper and lower bytes independently for byte-write operations.
Recommended
Networking Line-Card Packet Buffer Memory
Telecom line-card designs often need small, fast async SRAM blocks for descriptor queues, statistics counters, and per-flow state machines. The R1RW0416DSB-2LR#D0 provides 512 Kbyte per chip at 12 ns, and multiple chips can be paralleled on a 32-bit or 64-bit data bus if deeper buffering is needed. Its asynchronous interface allows the framer or NPU to issue purely random reads and writes with deterministic latency, without contention with periodic refresh cycles. The wide-temperature operation also tolerates ambient buildup inside chassis cooling margins.
Recommended
Medical Instrument Data-Logging Memory
Patient-monitoring and diagnostic-instrument designs benefit from the R1RW0416DSB-2LR#D0's deterministic access for storing waveform buffers, trend logs, and lookup tables. The single 3.3 V supply simplifies medical-device power architecture (often built around isolated DC-DC converters outputting 3.3 V or 5 V then regulated down). The 16-bit-wide bus accommodates parallel DMA transfers from high-precision ADCs at moderate sample rates, with byte-level write control (/LB, /UB) for efficient log-rotation use cases. L-grade -20C to +70C operation covers all controlled clinical environments.
Recommended
Recommended Products Summary
Engineering reference data for R1RW0416DSB-2LR#D0 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | R1RW0416DSB-2LR#D1 | R1RW0416DSB-2PR#D0 | R1RW0416DSB-0PR#D0 | CY7C1041DV33-12ZSXI | IS61WV25616FALL-12TLI |
|---|---|---|---|---|---|---|
| Brand | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | Infineon (Cypress) | ISSI |
| Package | 44-pin TSOP-II (400-mil) | 44-pin TSOP-II (400-mil) - same | 44-pin TSOP-II (400-mil) - same | 44-pin TSOP-II (400-mil) - same | 44-pin TSOP-II (400-mil) - same | 44-pin TSOP-II - same |
| Density | 4 Mbit (256K x 16) | 4 Mbit (256K x 16) | 4 Mbit (256K x 16) | 4 Mbit (256K x 16) | 4 Mbit (256K x 16) | 4 Mbit (256K x 16) |
| Access Time | 12 ns | 12 ns | 12 ns | 10 ns (faster) | 12 ns | 12 ns |
| Supply Voltage | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 2.4 V to 3.6 V (wider) |
| Operating Temperature | -20C to +70C (L grade) | -20C to +70C | 0C to +70C (P grade) | 0C to +70C (P grade) | -40C to +85C (industrial) | -40C to +85C (industrial) |
| Interface | Async parallel | Async parallel | Async parallel | Async parallel | Async parallel | Async parallel |
| Byte Control (/LB, /UB) | Yes | Yes | Yes | Yes | Yes | Yes (/BLE, /BHE) |
Key Differentiators
- Wide-temperature L grade (-20C to +70C) in same 44-pin TSOP-II footprint (vs R1RW0416DSB-2PR#D0)
- Cross-brand second-source availability with proven 3.3 V async architecture (vs CY7C1041DV33-12ZSXI)
- Asynchronous interface eliminates refresh and clock-training overhead (vs IS61WV25616FALL-12TLI)
Design Notes
Estimated: at 12 ns access time on a 80 MHz synchronous-equivalent bus and continuous block reads at I/O swing 3.3 V, total power dissipation is dominated by the active read/write current. Place a 0.1 uF X7R ceramic decoupling capacitor within 5 mm of each VCC/VSS pin pair, plus a single 10 uF bulk bypass near the IC. The Renesas R1RW0416D datasheet also recommends a 0.1 uF decoupling cap adjacent to every VSS pin, since async SRAM draws fast edge currents that the supply regulator cannot suppress alone.
Route the 16-bit I/O bus in matched-length groups to within 0.5 mm skew, especially if paralleling two chips for a 32-bit bus. Place the device with pin 1 marker consistent with the JEDEC TSOP-II orientation; many engineers accidentally mirror the footprint because TSOP-II is symmetrical if the marker is ignored. Connect unused NC pins (1, 8, 9 on this die) to no-net (floating) - do not tie NC to VCC or ground, as this is not a typical requirement per the datasheet.
Do not exceed VCC = 3.6 V absolute maximum - applying 5 V TTL inputs will latch up and permanently damage the part. Always drive /CE1 low (active) and CE2 high (active) simultaneously to select the device - if either is inactive, the I/O bus enters high-Z. When the MCU/CPU drives writes, ensure /WE goes low only while the bus is valid and /OE stays high (or both driven low and high respectively for correct read/write arbitration). For byte-write operations, drive only /LB or /UB low and place data on the selected byte lanes of I/O0-I/O15.
Keep the 44-pin TSOP-II package within 25 mm of the MCU/ASIC to avoid signal-integrity issues on the async address and data lines. Place VCC trace and VSS plane on adjacent layers with at least 0.5 mm spacing between address lines to reduce crosstalk. If using address pipelining or hardware latching, place a 1.5 K pull-up on the /CE1 line to prevent floating chip-select during controller reset. Reference the Renesas R1RW0416D series datasheet timing diagrams (tAA, tCO, tOH) for setup/hold margins relative to your local bus speed.
Compliance Information
RoHS and lead-free confirmed per Renesas product page and Mouser/DigiKey marketing metadata. AEC-Q100 is not qualified - choose an AEC-Q100 automotive part for automotive applications. Halogen-free status not explicitly stated in the verified data.
