STD5N52K3 - 5A, 525V N-Channel Power MOSFET | STMicroelectronics
MPN: STD5N52K3 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.76 | $7.60 |
| 100 | $0.68 | $68.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.55 | $550.00 |
Drop-in alternatives for STD5N52K3 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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Request AlternativesSTD5N52K3 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 525 V |
| Continuous Drain Current (ID) at 25°C | 5 A |
| Continuous Drain Current (ID) at 100°C | 3.2 A |
| Pulsed Drain Current (IDM) | 20 A |
| On-Resistance (RDS(on)) | 1.4 Ω typical |
| Gate-Source Voltage (VGS) | ±30 V |
| Gate Threshold Voltage (VGS(th)) | 3 V to 5 V |
| Gate Charge (Qg) | 15 nC typical |
| Input Capacitance (Ciss) | 450 pF typical |
| Output Capacitance (Coss) | 45 pF typical |
| Reverse Transfer Capacitance (Crss) | 8 pF typical |
| Power Dissipation (PD) at 25°C | 70 W |
| Operating Temperature Range | -55°C to +150°C |
| Package | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
STD5N52K3 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Drain connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Drain (tab) — Drain connection (exposed pad) |
Safe Operating Area
Typical Applications
STD5N52K3 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Motor Control, DC-DC Converters, Battery Chargers.
Switch-Mode Power Supplies (SMPS)
The STD5N52K3 is used as the main switching element in flyback and forward converters. Its 525V VDS rating allows it to handle high input voltages, while the low RDS(on) of 1.4Ω minimizes conduction losses, improving overall efficiency. In a typical SMPS, the MOSFET is driven by a PWM controller, switching at frequencies up to 100kHz. The low gate charge (15nC) enables fast switching, reducing switching losses. Proper snubber circuits are recommended to manage voltage spikes.
Recommended
Power Factor Correction (PFC)
In active PFC circuits, the STD5N52K3 operates in boost converter topology to shape the input current waveform. Its high voltage rating (525V) is essential for handling the boosted output voltage (typically 400V). The low on-resistance reduces conduction losses, and the fast switching capability (low Qg) improves efficiency. The device is often used in conjunction with a PFC controller like the L6562A.
Recommended
LED Lighting Drivers
The STD5N52K3 is suitable for LED drivers, particularly in offline applications where high voltage is present. It can be used in buck or flyback topologies to regulate LED current. The device's high VDS rating ensures reliability in 230V AC applications. Its low RDS(on) helps maintain efficiency, and the DPAK package allows for compact PCB designs. Thermal management is critical, as LED drivers often operate in enclosed fixtures.
Recommended
Motor Control
In motor control applications, the STD5N52K3 can be used in the inverter stage of variable frequency drives (VFDs) for small motors. Its 525V rating is suitable for 230V AC motor drives. The low on-resistance reduces power dissipation, and the fast switching enables PWM control at frequencies up to 20kHz. The device is often paired with gate drivers like the IR2110. For higher current motors, multiple devices can be paralleled.
Recommended
DC-DC Converters
The STD5N52K3 is used in isolated and non-isolated DC-DC converters, particularly in telecom and industrial applications where input voltages can be up to 400V. Its high VDS rating provides ample margin, and the low RDS(on) ensures high efficiency. The device can operate at switching frequencies up to 200kHz, thanks to its low gate charge. Proper gate drive and snubber circuits are essential for reliable operation.
Recommended
Battery Chargers
In battery chargers, the STD5N52K3 can be used in the power stage of a flyback converter to charge batteries from AC mains. Its 525V rating is suitable for universal input (85-265V AC). The low on-resistance reduces heat generation, and the DPAK package allows for compact charger designs. The device is often controlled by a charger IC like the UC3842 or a microcontroller.
Recommended
Recommended Products Summary
Engineering reference data for STD5N52K3 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STP5N52K3 | STD5N52K3-1 | FDP5N50 | IRF520 |
|---|---|---|---|---|---|
| Package | DPAK (TO-252) | TO-220 | IPAK (TO-251) | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | onsemi | Infineon |
| Drain-Source Voltage (VDS) | 525 V | 525 V | 525 V | 500 V | 100 V |
| Continuous Drain Current (ID) | 5 A | 5 A | 5 A | 5 A | 9.2 A |
| On-Resistance (RDS(on)) | 1.4 Ω | 1.4 Ω | 1.4 Ω | 1.4 Ω | 0.27 Ω |
| Gate Charge (Qg) | 15 nC | 15 nC | 15 nC | 15 nC | 16 nC |
| Power Dissipation (PD) | 70 W | 70 W | 70 W | 70 W | 60 W |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +175°C |
Key Differentiators
- High voltage rating of 525V (vs IRF520)
- Low on-resistance of 1.4Ω (vs FDP5N50)
- Surface-mount DPAK package (vs STP5N52K3)
Design Notes
The STD5N52K3 has a maximum power dissipation of 70W at 25°C case temperature. In a typical SMPS application with 100V input and 5A output, power dissipation can be significant. Ensure adequate heat sinking, such as a copper area on the PCB or an external heatsink, to keep the junction temperature below 150°C. The DPAK package has a junction-to-ambient thermal resistance of 100°C/W, so for high-power applications, consider using the TO-220 version (STP5N52K3) for better thermal performance.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10Ω) to dampen ringing. Ensure the source pin has a low-impedance path to the ground plane. For high-voltage applications, maintain proper creepage and clearance distances on the PCB to prevent arcing. Use a snubber circuit across the drain-source to suppress voltage spikes during switching.
Do not exceed the maximum VDS of 525V, as this can cause avalanche breakdown and damage the device. Ensure the gate-source voltage does not exceed ±30V, as this can damage the gate oxide. When paralleling multiple MOSFETs, use individual gate resistors to ensure equal current sharing. Also, be aware of the body diode's reverse recovery characteristics, which can cause additional losses in bridge topologies.
Compliance Information
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 qualified parts.
