STD15N60M2 - 600V 15A N-Channel Power MOSFET | STMicroelectronics
MPN: STD15N60M2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.25 | $1.25 |
| 10 | $1.12 | $11.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.85 | $425.00 |
| 1,000 | $0.72 | $720.00 |
Drop-in alternatives for STD15N60M2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPD15N60S3
β Drop-Inπ Reference alternative (not in catalog)
FDP15N60
β Drop-Inπ Reference alternative (not in catalog)
AOT15N60
β Drop-Inπ Reference alternative (not in catalog)
STD15N60M2 Maximum Ratings & Electrical Characteristics
| Technology | MDmesh M2 |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 15 A |
| Continuous Drain Current (ID) at 100Β°C | 9.5 A |
| Pulsed Drain Current (IDM) | 60 A |
| Gate-Source Voltage (VGS) | Β±25 V |
| On-Resistance (RDS(on)) typical | 0.29 ohm |
| On-Resistance (RDS(on)) max | 0.34 ohm |
| Total Gate Charge (Qg) | 28 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 80 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Power Dissipation (PD) at 25Β°C | 110 W |
| Operating Temperature Range | -55Β°C to +150Β°C |
| Package | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Halogen Free | Yes |
STD15N60M2 Pin Configuration
| Pin 1 | Gate β Gate drive input |
| Pin 2 | Drain β Drain connection (tab) |
| Pin 3 | Source β Source connection |
Safe Operating Area
Typical Applications
STD15N60M2 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Motor Control, Solar Inverters, Uninterruptible Power Supplies (UPS).
Switch-Mode Power Supplies (SMPS)
The STD15N60M2 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance. In a typical flyback or forward converter, the MOSFET switches at high frequency, and its low gate charge (28 nC) reduces switching losses. The low RDS(on) of 0.29 ohm minimizes conduction losses, improving overall efficiency. The DPAK package allows compact designs with adequate thermal management. For a 100W SMPS operating from 380V DC, the MOSFET can handle the voltage stress and current with proper heatsinking. The fast switching speed enables higher frequency operation, reducing transformer size. Designers should ensure proper gate drive voltage (10V) and snubber circuits to manage voltage spikes.
Recommended
Power Factor Correction (PFC)
In PFC circuits, the STD15N60M2 operates as a boost switch to shape the input current waveform. Its 600V rating is sufficient for universal input (85-265V AC) applications. The low on-resistance reduces conduction losses, and the low gate charge enables high-frequency operation (up to 100 kHz) to reduce inductor size. The device's fast switching minimizes EMI, simplifying filter design. For a 300W PFC stage, the MOSFET dissipates approximately 5W, requiring a heatsink or adequate PCB copper. The MDmesh M2 technology provides a good trade-off between RDS(on) and Qg, making it suitable for continuous conduction mode (CCM) PFC. Designers should use a dedicated PFC controller like the L6562A and ensure proper gate drive.
Recommended
LED Lighting Drivers
The STD15N60M2 is used in LED drivers for high-voltage applications, such as street lighting and industrial lighting. In a flyback LED driver, the MOSFET switches the primary side of the transformer, and its 600V rating handles the reflected voltage. The low on-resistance reduces losses, improving efficiency and reducing heat. The DPAK package is suitable for compact LED driver designs. For a 50W LED driver, the MOSFET operates at 65 kHz, and its low gate charge allows efficient switching. The device's robustness against avalanche ensures reliability in inductive load conditions. Designers should use a suitable LED driver IC like the HV9910 and ensure proper thermal management.
Recommended
Motor Control
In motor control applications, the STD15N60M2 is used in the inverter stage of variable frequency drives (VFDs) for three-phase motors. Its 600V rating is suitable for 230V AC motor drives. The low on-resistance minimizes conduction losses, and the fast switching reduces switching losses, improving efficiency. The device can handle the inductive load currents with proper freewheeling diodes. For a 1kW motor drive, the MOSFETs are used in a three-phase bridge, and each device dissipates about 10W, requiring heatsinks. The MDmesh M2 technology provides ruggedness for harsh industrial environments. Designers should use gate drivers like the IR2110 and ensure proper dead-time control.
Recommended
Solar Inverters
The STD15N60M2 is used in solar inverters for DC-AC conversion. Its 600V rating is suitable for photovoltaic systems with up to 400V DC input. The low on-resistance reduces conduction losses, improving the overall efficiency of the inverter. The device's fast switching enables high-frequency PWM, reducing the size of magnetic components. For a 2kW solar inverter, the MOSFETs are used in a full-bridge topology, and each device dissipates about 15W, requiring adequate cooling. The MDmesh M2 technology ensures high reliability in outdoor environments. Designers should use a suitable inverter controller and ensure proper gate drive and protection circuits.
Recommended
Uninterruptible Power Supplies (UPS)
In UPS systems, the STD15N60M2 is used in the inverter and battery charger stages. Its 600V rating is suitable for 230V AC output. The low on-resistance reduces losses, improving efficiency and battery life. The device's fast switching enables high-frequency operation, reducing transformer size. For a 1kVA UPS, the MOSFETs are used in a half-bridge inverter, and each device dissipates about 12W, requiring heatsinks. The MDmesh M2 technology provides robustness for continuous operation. Designers should use a UPS controller and ensure proper thermal management.
Recommended
Recommended Products Summary
Engineering reference data for STD15N60M2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STD15N60M2-1 | STF15N60M2 | IPD15N60S3 | FDP15N60 |
|---|---|---|---|---|---|
| Package | DPAK (TO-252) | IPAK (TO-251) | TO-220FP | DPAK (TO-252) | DPAK (TO-252) |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 15 A | 15 A | 15 A | 15 A | 15 A |
| On-Resistance (RDS(on)) typical | 0.29 ohm | 0.29 ohm | 0.29 ohm | 0.29 ohm | 0.32 ohm |
| Total Gate Charge (Qg) | 28 nC | 28 nC | 28 nC | 30 nC | 35 nC |
| Power Dissipation (PD) at 25Β°C | 110 W | 110 W | 40 W | 110 W | 110 W |
| Operating Temperature Range | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C |
Key Differentiators
- Low on-resistance (0.29 ohm) reduces conduction losses (vs FDP15N60)
- Low gate charge (28 nC) enables high-frequency operation (vs IPD15N60S3)
- MDmesh M2 technology provides a good trade-off between RDS(on) and Qg (vs FDP15N60)
Design Notes
The STD15N60M2 has a maximum power dissipation of 110W at 25Β°C case temperature. In a typical SMPS application with 100W output, the MOSFET may dissipate 5-10W. Ensure adequate heatsinking or PCB copper area to keep the junction temperature below 150Β°C. The junction-to-case thermal resistance is 2.5Β°C/W, so a heatsink with a thermal resistance of 10Β°C/W or better is recommended for continuous operation.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-22 ohm) to control switching speed and reduce EMI. The source pin should be connected directly to the ground plane with a short, wide trace to minimize common-source inductance. For the drain, use a wide copper pour to aid heat dissipation.
Do not exceed the maximum gate-source voltage of Β±25V. Use a gate driver with proper voltage clamping if necessary. Ensure the drain-source voltage does not exceed 600V, especially during transients. Add a snubber circuit or use avalanche-rated devices to handle inductive spikes. Also, consider the reverse recovery of the body diode in bridge topologies.
Compliance Information
RoHS compliant and halogen-free per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 parts.
