TPS7H6200-SEP - 52A Rad-Tolerant GaN Half-Bridge | Texas Instruments
MPN: TPS7H6200-SEP ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $132.5 | $1,325.00 |
| 100 | $119.75 | $11,975.00 |
| 500 | $108.2 | $54,100.00 |
| 1,000 | $98.6 | $98,600.00 |
TPS7H6200-SEP Overview
A GaN half-bridge power stage is a highly integrated building block that packages the high-side and low-side switches of a synchronous buck converter together with their gate drivers, eliminating the parasitic inductance that limits switching performance in discrete buck designs. By integrating the GaN FETs onto a single die and co-packaging the driver, the TPS7H6200-SEP achieves faster switching edges, lower dead-time losses, and a much smaller PCB footprint than equivalent discrete silicon implementations. It belongs to the broader category of power management integrated circuits and is positioned at the high-performance tier of point-of-load (POL) regulators for satellite, aerospace, and defense power-conversion systems.
Key features include 52 A continuous per half-bridge output capability, integrated low-side current sensing for telemetry and cycle-by-cycle protection, tri-state PWM input compatible with standard controller ICs, built-in overtemperature and overcurrent protection, and radiation-tolerant construction for low-earth-orbit and geostationary missions. The co-packaged GaN die minimizes loop inductance between high-side and low-side devices, which directly improves switching efficiency at high di/dt.
Typical applications include radiation-tolerant point-of-load converters for space-grade FPGA core rails, satellite command-and-data-handling subsystems, distributed 12 V intermediate bus converters, and high-current synchronous-buck POL stages for processors and ASICs. Two TPS7H6200-SEP devices can be paralleled with the TPS7H5101-SEP controller to scale to 80 A, with additional phases for 160 A and beyond.
When laying out this device, keep the input decoupling loop as small as possible and follow the land pattern and thermal via array shown in the manufacturer datasheet. The low-side current-sense output is referenced to the source of the low-side FET and must be conditioned externally before being fed back to the controller.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet with engineering-oriented context for power-stage selection in space-grade and high-reliability POL designs.
Drop-in alternatives for TPS7H6200-SEP — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
TPS7H6200-SEP
✅ Drop-In✓ In Stock
$98.6 / Unit
View Datasheet →LMG2100R044
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
TPS7H5101-SEP
✅ Drop-In📋 Reference alternative (not in catalog)
LMP7704MA
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
TPS7H6200-SEP Maximum Ratings & Electrical Characteristics
| Product Type | GaN half-bridge power stage |
| Topology | Synchronous half-bridge (high-side + low-side) |
| Drain-Source Voltage (VDS) | 15 V |
| Continuous Output Current | 52 A |
| Switch Technology | e-mode GaN FET with integrated gate driver |
| PWM Input | Tri-state PWM compatible |
| Current Sense | Integrated low-side current sense |
| Protection Features | Overtemperature protection, overcurrent protection |
| Radiation Hardness | Radiation-tolerant (space-grade) |
| Mounting Type | Surface Mount |
TPS7H6200-SEP standard Pin Configuration Guide
Pin configuration for TPS7H6200-SEP (standard package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for TPS7H6200-SEP.
Refer to the datasheet for full pin configuration.
Safe Operating Area (GaN half-bridge power stage)
Typical Applications
TPS7H6200-SEP is suitable for 6 applications: Space-Grade FPGA Point-of-Load Converter, Satellite Command and Data Handling (C&DH) Subsystem, 12 V Intermediate Bus Point-of-Load Stage, Defense and Aerospace Avionics Power Supply, High-Current Radiation-Tolerant ASIC Power Rail, Ground-Based Radiation-Test Reference Design.
Space-Grade FPGA Point-of-Load Converter
The TPS7H6200-SEP delivers clean, sub-1 V core rails to space-grade FPGAs by stepping a 12 V intermediate bus down through a synchronous-buck topology. The integrated GaN half-bridge with co-packaged driver keeps the high-side to low-side switching loop inductance low, which directly improves switching efficiency at the 50+ A currents demanded by modern FPGA cores. According to TI's E2E FAQ, the TPS7H5101-SEP controller + TPS7H6200-SEP power stage scales from a single 40 A phase to 80 A (two phases) up to 160 A for high-density processing payloads. Radiation tolerance makes the part suitable for low-earth-orbit and geostationary missions where total ionizing dose and single-event effects would degrade commercial GaN solutions.
Recommended
Satellite Command and Data Handling (C&DH) Subsystem
The TPS7H6200-SEP fits satellite C&DH power-distribution networks that need radiation-tolerant POL conversion for onboard computers, telemetry processors, and memory banks. The integrated low-side current-sense output enables telemetry of each POL rail's load current, which is essential for in-orbit health monitoring and fault isolation. Built-in overtemperature and overcurrent protection events can be latched and reported through the controller for mission-critical fault management. The 52 A continuous capability per device supports most C&DH processor loads with margin, while parallel operation extends the architecture to high-power payloads.
Recommended
12 V Intermediate Bus Point-of-Load Stage
In distributed 12 V intermediate-bus architectures, the TPS7H6200-SEP sits downstream of the main bus converter (typically an isolated 100 V+ GaN or silicon stage) and provides the final sub-1 V step-down to the load. The GaN switching characteristics — combined with the integrated driver — yield efficiency well above what discrete silicon half-bridges achieve at the same switching frequency, reducing thermal stress in sealed space-qualified enclosures. Tri-state PWM compatibility lets the device accept standard controller waveforms with no interface logic. The small PCB footprint of the co-packaged GaN + driver enables dense POL arrays under BGA processors and ASICs.
Recommended
Defense and Aerospace Avionics Power Supply
Military and aerospace avionics platforms benefit from the TPS7H6200-SEP's combination of high current density, thermal robustness, and TI's radiation-tolerant qualification flow. The device powers mission-computing, electronic-countermeasures, and sensor-processing ASICs that demand tightly regulated sub-1 V rails from a 28 V (down-converted) or 12 V intermediate bus. Integrated current sense and protection features lower BOM count and remove the need for discrete shunt resistors and external op-amps. According to the TI product page, the part's qualification flow supports defense procurement programs that require extended documentation, RHA reports, and traceability.
Recommended
High-Current Radiation-Tolerant ASIC Power Rail
Space-grade ASICs such as RF front-ends, signal-processing accelerators, and AI inference engines draw tens of amps at sub-1 V core voltages. The TPS7H6200-SEP's 52 A capability and parallel scalability (via additional TPS7H6200-SEP devices on the same phase) deliver the higher currents such ASICs need. The integrated GaN die minimizes dead-time, which directly cuts conduction loss at the high di/dt transitions of 160 A-class loads. Tri-state PWM, current sense, and built-in protection reduce external component count and shrink the overall POL footprint to fit under dense BGA ASIC packages.
Recommended
Ground-Based Radiation-Test Reference Design
Beyond flight hardware, the TPS7H6200-SEP is used in radiation-test reference designs where engineers characterize total ionizing dose (TID), single-event effect (SEE), and single-event burnout (SEB) behavior of GaN power stages. TI's space-grade GaN portfolio documentation references the TPS7H6200-SEP in test fixtures that sweep proton and heavy-ion exposure. Using the same device across flight and test hardware shortens design cycles and ensures the qualification evidence corresponds one-to-one with the production hardware.
Recommended
Recommended Products Summary
Engineering reference data for TPS7H6200-SEP — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | TPS7H6200-SEP | LMG2100R044 | TPS7H5101-SEP |
|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Type | GaN half-bridge power stage | GaN half-bridge power stage | GaN half-bridge power stage | PWM controller |
| Switch Technology | e-mode GaN FET + integrated driver | e-mode GaN FET + integrated driver | e-mode GaN FET + integrated driver | Silicon controller (drives external FETs) |
| Radiation Tolerance | Radiation-tolerant (SEP) | Radiation-tolerant (SEP) | Commercial (no radiation pedigree) | Radiation-tolerant (SEP) |
| PWM Compatibility | Tri-state PWM | Tri-state PWM | Tri-state PWM | PWM (tri-state capable) |
| PWM Controller | External (e.g. TPS7H5101-SEP) | External (e.g. TPS7H5101-SEP) | External (e.g. UCD3138 or TPS53681) | Self (controller IC) |
Key Differentiators
- Integrated driver plus GaN FET on one substrate (vs Discrete GaN half-bridge)
- Radiation-tolerant qualification (vs LMG2100R044 (commercial GaN half-bridge))
- Integrated low-side current sense (vs TPS7H5101-SEP)
Design Notes
The TPS7H6200-SEP's high-side drain is exposed for direct PCB cooling. To meet the full 52 A rating continuously, the manufacturer's datasheet recommends a thermal via array under the exposed GaN pad, with at least 1 oz copper on inner layers and 2 oz copper on outer layers. Estimated: at 15 V input to 1.0 V output at 52 A, switching loss and conduction loss combined typically yield 3-4 W dissipated inside the package; a properly stitched thermal via farm keeps junction-to-ambient thermal resistance in the single-digit C/W range needed for space-grade derating margins.
Place the input ceramic bypass capacitors as close as possible to the TPS7H6200-SEP's input pin to minimize the high-frequency switching loop. The high-side to low-side GaN loop must be kept symmetric and short — the datasheet recommends matching trace lengths on both branches to avoid imbalance that can over-stress one side of the half-bridge. A solid ground plane on the layer directly under the device reduces EMI and improves thermal spreading.
Do not connect the TPS7H6200-SEP's low-side current-sense output directly to a microcontroller ADC. The sense signal is referenced to the low-side GaN source (which is switching), so it must be conditioned with an external differential amplifier and low-pass filter before being used for telemetry or protection. Also verify the tri-state PWM input timing — the device expects a precise tDEAD specification from the controller that, if violated, can shoot-through the high-side and low-side GaN FETs.
For parallel operation of multiple TPS7H6200-SEP devices on a single phase (160 A and above), gate-drive traces and current-sense traces must be individually routed with matched impedance. TI's E2E FAQ on space-grade FPGA core rail design recommends a star-ground layout at the controller's PGND pin with separate analog and power grounds, plus dedicated Kelvin-sense connections to each device's low-side source for accurate current sharing.
Compliance Information
The TPS7H6200-SEP is a SEP-class radiation-tolerant part, not AEC-Q100 automotive. RoHS, REACH, lead-free, and halogen-free status not stated in the verified web data and marked as unknown.
