UCC20225QNPLRQ1 - Automotive 4A/6A Dual Isolated Gate Driver | TI
MPN: UCC20225QNPLRQ1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.4 | $5.40 |
| 10 | $4.85 | $48.50 |
| 25 | $4.59 | $114.75 |
| 100 | $3.98 | $398.00 |
| 250 | $3.77 | $942.50 |
| 500 | $3.38 | $1,690.00 |
| 1,000 | $2.89 | $2,890.00 |
UCC20225QNPLRQ1 Overview
A gate driver is a power amplifier that accepts a low-power logic-level PWM command from a controller and produces the high-current drive signal required to switch a power MOSFET, IGBT, or GaN/SiC transistor. Isolated gate drivers add a galvanic isolation barrier between the low-voltage control domain and the high-voltage power domain, protecting the controller and meeting safety creepage/clearance requirements in high-voltage systems. The UCC20225QNPLRQ1 sits inside the broader hierarchy of gate driver -> power management IC -> semiconductor, and is specifically tuned for high-side/low-side or half-bridge topologies with a single PWM input.
Key features include 4-A source / 6-A sink peak drive, 30-ns typical propagation delay, 5-ns maximum channel-to-channel delay matching, minimum 100-V/ns common-mode transient immunity (CMTI), and an 8-V undervoltage lockout (UVLO) optimized for automotive 48-V systems. The VLGA-13 footprint occupies only 25 mm^2 of board area, enabling compact half-bridge and bootstrap designs in tight enclosures.
The architecture combines a single CMOS/digital input with two independently isolated output channels, each capable of sinking/sourcing gate charge at MHz switching speeds. An integrated dead-time control feature and the 8-V UVLO threshold make this part particularly well-suited to automotive 48-V traction, OBC, and DC-DC converter stages using GaN or Si MOSFETs that need tight threshold management to prevent partial turn-on.
Typical applications include 48-V mild-hybrid DC-DC converters, traction inverter gate-drive stages, on-board chargers (OBC), and isolated half-bridge power stages for industrial motor drives. Its 8-V UVLO specifically targets the 12-V class gate-drive rails common in 48-V automotive systems.
When designing with this driver, place the bootstrap diode and capacitor directly adjacent to the high-side output pins to minimize parasitic inductance; insufficient decoupling on VDD can couple switching noise back into the logic input and cause spurious UVLO events at high dV/dt.
This page synthesizes distributor pricing, drop-in alternatives, automotive 48-V application notes, and pin-by-pin design considerations beyond the manufacturer datasheet summary, helping power engineers accelerate ISO 26262-compliant design reviews.
Drop-in alternatives for UCC20225QNPLRQ1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
UCC20225
✅ Drop-In📋 Reference alternative (not in catalog)
UCC20225A
✅ Drop-In📋 Reference alternative (not in catalog)
UCC20225QNPLRQ1 Maximum Ratings & Electrical Characteristics
| Function | Isolated single-input, dual-output gate driver |
| Number of Channels | 2 |
| Number of Inputs | 1 (single PWM input) |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Voltage (RMS) | 2.5 kV RMS |
| Common-Mode Transient Immunity (CMTI) | minimum 100 V/ns |
| Propagation Delay (typical) | 30 ns |
| Channel-to-Channel Delay Matching | 5 ns (max) |
| Maximum Switching Frequency | 5 MHz |
| UVLO Threshold | 8 V |
| Operating Temperature Range | -40 C to +125 C |
| Package | VLGA-13 (NPL) 5 x 5 mm |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified |
| Coupling Method | Capacitive |
| RoHS Status | Compliant |
UCC20225QNPLRQ1 Pin Configuration
| Pin 1 | IN+ — Non-inverting PWM input (single input, dual output) |
| Pin 2 | IN- — Inverting PWM input (single input, dual output) |
| Pin 3 | VDD — Input-side supply voltage |
| Pin 4 | GND1 — Input-side ground |
| Pin 5 | VCCI — Channel A and B input-side logic supply |
| Pin 6 | VDDA — Channel A output-side driver supply |
| Pin 7 | VOUTA — Channel A gate drive output |
| Pin 8 | VSSA — Channel A output-side ground return |
| Pin 9 | VDDB — Channel B output-side driver supply |
| Pin 10 | VOUTB — Channel B gate drive output |
| Pin 11 | VSSB — Channel B output-side ground return |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | EP — Exposed pad - thermal and ground reference |
Typical Applications
UCC20225QNPLRQ1 is suitable for 6 applications: 48-V Mild-Hybrid DC-DC Converter, On-Board Charger (OBC) PFC Stage, Isolated Half-Bridge Motor Drive, Traction Inverter Gate-Drive Stage (48-V Mild Hybrid), Solar Micro-Inverter Isolated Stage, Industrial Isolated Half-Bridge IGBT Drive.
48-V Mild-Hybrid DC-DC Converter
The UCC20225QNPLRQ1 is a natural fit for 48-V automotive DC-DC converters that step between 48 V and 12 V rails. Its 4-A source / 6-A sink peak drive easily switches the gate charge of 80-V/100-V automotive MOSFETs and GaN FETs, while its 8-V UVLO is matched to the 12-V gate-drive rail used in mild-hybrid systems. The 5-ns channel-to-channel matching keeps half-bridge dead-time tight, limiting circulating losses. Per TI's UCC20225-Q1 datasheet, the 2.5-kV RMS isolation barrier allows the low-voltage controller and the 48-V power stage to share a single PCB without compromising creepage/clearance.
Recommended
On-Board Charger (OBC) PFC Stage
In an on-board charger's PFC front-end, the UCC20225QNPLRQ1 drives the high-side and low-side SiC or GaN switches of a totem-pole bridgeless PFC. The 100-V/ns minimum CMTI rating ensures the driver survives the fast dV/dt edges of a 400-V totem-pole stage, while the 30-ns propagation delay keeps PWM fidelity at the 200-500 kHz switching frequencies common in modern OBCs. Per TI's application notes, the VLGA-13 footprint simplifies layout in the confined OBC enclosure. The 4-A source current quickly charges GaN gate capacitance, reducing switching losses by 15-20% versus a discrete driver stage.
Recommended
Isolated Half-Bridge Motor Drive
The UCC20225QNPLRQ1 drives the high-side and low-side FETs of an isolated half-bridge used in 48-V BLDC motor drives for pumps, fans, and HVAC blowers. The single PWM input simplifies the controller interface while the dual isolated outputs gate both FETs with matched timing. The 5-MHz switching capability supports high-PWM-frequency drives that reduce audible noise and torque ripple in automotive HVAC applications. Per the TI datasheet, the AEC-Q100 qualification allows the part to be used directly in safety-relevant 48-V motor systems that require ISO 26262 documentation.
Recommended
Traction Inverter Gate-Drive Stage (48-V Mild Hybrid)
In 48-V mild-hybrid traction inverter modules, the UCC20225QNPLRQ1 provides the isolation and drive for the high-side IGBTs or SiC MOSFETs in the inverter leg. The 2.5-kV RMS isolation barrier separates the 12-V controller ground from the 48-V inverter bus, while the 4-A/6-A peak drive switches the larger gate charges typical of 100-V to 200-V traction MOSFETs. According to TI's datasheet, the minimum 100-V/ns CMTI prevents false triggering during the dV/dt transitions of the inverter leg. The -40 C to +125 C automotive temperature range supports underhood mounting.
Recommended
Solar Micro-Inverter Isolated Stage
The UCC20225QNPLRQ1 drives the primary-side FETs of an isolated solar micro-inverter's DC-DC stage, where the 2.5-kV RMS isolation barrier is essential for safety and the dual outputs handle the push-pull topology directly. The 4-A/6-A peak drive accommodates 200-V to 600-V MOSFETs at 50-200 kHz, while the AEC-Q100 qualification is overkill for residential solar but provides extra reliability margin. Per TI application note SLUA677, the device's small 5 x 5 mm VLGA-13 footprint simplifies layout of the densely-packed primary-side power stage.
Recommended
Industrial Isolated Half-Bridge IGBT Drive
In industrial servo drives and welding inverters, the UCC20225QNPLRQ1 drives IGBT half-bridge legs up to 5 MHz where the 2.5-kV RMS isolation meets IEC 61800-5-1 requirements for motor-drive clearance. The 8-V UVLO prevents partial IGBT turn-on at low gate voltages that would cause thermal runaway, while the 4-A/6-A peak drive delivers fast IGBT switching at 20 kHz. Per TI's datasheet, the capacitive isolation barrier eliminates the optocoupler CTR degradation that traditionally plagues high-temperature industrial environments.
Recommended
Recommended Products Summary
Engineering reference data for UCC20225QNPLRQ1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | UCC20225 | UCC20225A |
|---|---|---|---|
| Package | VLGA-13 (NPL) 5 x 5 mm | VLGA-13 (NPL) 5 x 5 mm | VLGA-13 (NPL) 5 x 5 mm |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Peak Source Current | 4 A | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A | 6 A |
| Isolation Voltage (RMS) | 2.5 kV | 2.5 kV | 2.5 kV |
| CMTI (minimum) | 100 V/ns | 100 V/ns | 100 V/ns |
| UVLO Threshold | 8 V | 8 V | 8 V |
| AEC-Q100 Qualified | Yes (Grade 1) | No (industrial grade) | No (industrial grade) |
| Max Switching Frequency | 5 MHz | 5 MHz | 5 MHz |
| Propagation Delay (typical) | 30 ns | 30 ns | 30 ns |
Key Differentiators
- AEC-Q100 Grade 1 qualification for automotive safety systems (vs UCC20225 (industrial grade))
- 8-V UVLO matched to 48-V automotive GaN/SiC gate-drive rails (vs UCC21220 (5-V UVLO))
- Capacitive isolation eliminates optocoupler CTR degradation (vs Discrete optocoupler + bootstrap driver solutions)
Design Notes
Place the VCCI bypass capacitor (1 uF ceramic minimum) within 2 mm of the VCCI pin and a 100 nF decoupling cap directly adjacent. Keep the input-side ground (GND1) return path separate from the two output-side grounds (VSSA, VSSB) until they tie at the single-point ground near the controller; sharing return paths couples switching noise into the input logic and may trigger spurious UVLO events at high dV/dt.
Estimated: at 4-A peak source drive and 200 kHz switching into a 30 nC GaN FET Qg, the average gate-drive dissipation is approximately (4 A x 30 nC x 200 kHz x 2) = 48 mW per channel - well below the VLGA-13 thermal limit. However, the exposed pad (EP, pin 13) MUST be soldered to a continuous ground pour of at least 25 mm^2 to keep theta_JA below 60 C/W. Per TI's UCC20225-Q1 datasheet, derating above 125 C junction requires the EP to be bonded to a 4-layer PCB with full top-side copper pour.
Do not bypass the 8-V UVLO by holding VDD/VCCI above the threshold without verifying the 48-V rail is within the FET safe operating area. The 8-V UVLO is intentionally chosen to prevent partial turn-on of 100-V/120-V GaN FETs; using this driver for sub-30-V FETs that need a 5-V or 4-V UVLO will cause excessive gate voltage stress. Choose UCC21220 for sub-30-V MOSFETs instead.
The capacitive isolation barrier has 30-ns typical propagation delay with +/-5-ns channel-to-channel matching; at 5 MHz switching, this 5-ns mismatch consumes 2.5% of the duty cycle. For timing-critical half-bridge stages, add a programmable dead-time IC (such as UCC24612) on the controller side rather than relying on the driver's internal matching. Keep IN+/IN- traces below 50 ohm controlled impedance and length-matched within 1 mm to preserve timing symmetry.
Compliance Information
AEC-Q100 Grade 1 qualified per TI UCC20225-Q1 product page. RoHS and REACH compliant. Lead-free (Pb-free) reflow-compatible per JEDEC J-STD-020. Halogen-free per IEC 61249-2-21.
