UCC5880-Q1 - Isolated 20A Adjustable SiC/IGBT Gate Driver | TI
MPN: UCC5880-Q1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.85 | $7.85 |
| 10 | $7.1 | $71.00 |
| 100 | $6.3 | $630.00 |
| 500 | $5.72 | $2,860.00 |
| 1,000 | $5.2 | $5,200.00 |
UCC5880-Q1 Overview
What is an isolated gate driver? An isolated gate driver is a power-management interface IC that provides galvanic isolation between a low-voltage control domain (MCU, DSP, or FPGA) and a high-voltage power-transistor stage (IGBT, SiC MOSFET, or GaN FET). Compared with non-isolated gate drivers, isolated gate drivers - including the UCC5880-Q1 - use capacitive or magnetic barriers to block high-voltage transients, allowing the control circuit to float at a separate domain and enabling directly-referenced gate drive for high-side switching in half-bridge and full-bridge power stages. They sit in the broader hierarchy of gate driver IC -> power management IC -> semiconductor IC.
The UCC5880-Q1's adjustable drive-strength feature lets the system engineer tune the gate-source current for the specific switching speed required, mitigating EMI and ringing without external gate resistors. Built-in protection includes programmable soft turn-off or two-level soft turn-off during DESAT and over-current faults, plus over-temperature shutdown, dramatically reducing the burden on the host MCU.
Functional Safety-Compliant design and AEC-Q100 qualification make the UCC5880-Q1 attractive for traction inverters, onboard chargers, and DC-DC converters in xEV platforms. Internal 32-SSOP package, tight parameter specification, and TI's reference design TIDT356 (HybridPACK IGBT module driver) demonstrate mature field readiness.
Typical applications include traction inverter power stages using SiC MOSFETs, EV onboard chargers, and industrial servo drives. The UCC5880-Q1 also serves in DC fast-charging station PFC stages, where galvanic isolation is mandated between control and power stages. Its high drive strength eliminates external buffer stages on 1200V-class SiC discrete modules, simplifying layout.
Design tip: pair the UCC5880-Q1 with the TI LM5180-Q1 isolated bias supply to build a complete isolated gate-drive bias rail in the TIDT356 HybridPACK reference design. Adjust drive strength via SPI/registers to match the target MOSFET's Qg.
This page synthesizes distributor availability, drop-in alternatives (notably the pin-to-pin-compatible UCC5881-Q1), and design notes beyond the TI datasheet, helping engineers choose validated second sources for automotive production ramps.
Drop-in alternatives for UCC5880-Q1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
UCC5881-Q1
✅ Drop-In✓ In Stock
$6.5 / Unit
View Datasheet →UCC5880-Q1 Maximum Ratings & Electrical Characteristics
| Function | Isolated single-channel gate driver |
| Isolation Type | Capacitive coupling |
| Isolation Rating | 5000 Vrms |
| Number of Channels | 2 |
| Maximum Drive Current | 20 A |
| Output Configuration | Adjustable drive strength |
| Topology | High-side / low-side isolated gate driver |
| Target Transistors | SiC MOSFET, IGBT |
| Protection Features | DESAT, over-current, over-temperature (PTC/NTC/diode), soft turn-off, two-level soft turn-off |
| Package | 32-SSOP (DFC) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified |
| Functional Safety | Functional Safety-Compliant |
| RoHS Status | Compliant |
UCC5880-Q1 Pin Configuration
| Pin 1 | VCCI — Primary-side supply voltage [DATA_NEEDED: pin function detail] |
| Pin 2 | GND1 — Primary-side ground [DATA_NEEDED: pin function detail] |
| Pin 3 | PWMH — PWM high-side input [DATA_NEEDED: pin function detail] |
| Pin 4 | PWML — PWM low-side input [DATA_NEEDED: pin function detail] |
| Pin 5 | FLT — Fault output [DATA_NEEDED: pin function detail] |
| Pin 6 | RDY — Ready output [DATA_NEEDED: pin function detail] |
| Pin 7 | SD — Shutdown input [DATA_NEEDED: pin function detail] |
| Pin 8 | OC — Over-current input [DATA_NEEDED: pin function detail] |
| Pin 9 | DESAT — DESAT detection input [DATA_NEEDED: pin function detail] |
| Pin 10 | VSS2 — Secondary-side negative supply [DATA_NEEDED: pin function detail] |
| Pin 11 | VEE — Gate negative rail [DATA_NEEDED: pin function detail] |
| Pin 12 | GH — High-side gate drive output [DATA_NEEDED: pin function detail] |
| Pin 13 | SH — High-side source sense [DATA_NEEDED: pin function detail] |
| Pin 14 | VCC2 — Secondary-side positive supply [DATA_NEEDED: pin function detail] |
| Pin 15 | GL — Low-side gate drive output [DATA_NEEDED: pin function detail] |
| Pin 16 | SL — Low-side source sense [DATA_NEEDED: pin function detail] |
| Pin 17 | VEE2 — Secondary-side negative supply [DATA_NEEDED: pin function detail] |
| Pin 18 | NC — Not connected (per datasheet) |
| Pin 19 | NC — Not connected (per datasheet) |
| Pin 20 | NC — Not connected (per datasheet) |
| Pin 21 | NC — Not connected (per datasheet) |
| Pin 22 | NC — Not connected (per datasheet) |
| Pin 23 | NC — Not connected (per datasheet) |
| Pin 24 | NC — Not connected (per datasheet) |
| Pin 25 | NC — Not connected (per datasheet) |
| Pin 26 | NC — Not connected (per datasheet) |
| Pin 27 | NC — Not connected (per datasheet) |
| Pin 28 | NC — Not connected (per datasheet) |
| Pin 29 | NC — Not connected (per datasheet) |
| Pin 30 | NC — Not connected (per datasheet) |
| Pin 31 | NC — Not connected (per datasheet) |
| Pin 32 | NC — Not connected (per datasheet) |
Typical Applications
UCC5880-Q1 is suitable for 7 applications: EV Traction Inverter SiC Gate Drive, Onboard Charger (OBC) High-Voltage Stage, Industrial Servo Drive IGBT Driver, DC Fast Charging Station PFC Stage, Solar String Inverter Half-Bridge Stage, Bidirectional EV DCDC Converter, Wireless EV Charging LCC Resonant Stage.
EV Traction Inverter SiC Gate Drive
The UCC5880-Q1's 20A peak drive strength and 5000 Vrms capacitive isolation make it ideal for driving 800V-class SiC MOSFETs in 3-phase EV traction inverters. According to TI's TIDT356 reference design, six UCC5880-Q1 devices coupled with six LM5180-Q1 bias supplies directly drive Infineon HybridPACK IGBT modules in production-grade inverter stages. Adjustable drive strength via internal registers lets designers tune dv/dt to balance switching loss against motor-side EMI, while integrated DESAT and over-current protection trigger soft turn-off to limit fault current - critical for ASIL-D ISO 26262 systems requiring autonomous transistor protection without host-MCU intervention.
Recommended
Onboard Charger (OBC) High-Voltage Stage
The UCC5880-Q1 provides reliable gate drive for SiC MOSFETs in 6.6kW or 22kW onboard charger PFC and DCDC stages isolating the 400V/800V bus from the low-voltage control domain. Its 5000 Vrms isolation rating meets reinforced-insulation requirements mandated for xEV OBC architectures per common OEM standards, while the 20A drive current eliminates discrete buffer stages that would otherwise increase BOM cost and PCB area. Integrated DESAT detection, shunt-based over-current, and PTC/NTC over-temperature inputs close the protection loop without burdening the OBC MCU, accelerating ASIL-B/C functional-safety compliance for the charger subsystem.
Recommended
Industrial Servo Drive IGBT Driver
In industrial servo drives and AC inverter drives, the UCC5880-Q1 drives 600V/1200V IGBT modules with adjustable strength and full fault protection. According to TI's product page, the isolated gate driver simplifies layout by allowing direct PCB placement near each IGBT module while the controller floats on a separate domain. Selectable soft turn-off during DESAT or over-current events prevents dv/dt-induced module failures, extending IGBT lifetime under repetitive fault conditions. AEC-Q100 qualification provides higher screening margins than commercial-grade alternatives, suiting industrial-environment stress profiles and simplifying second-source qualification.
Recommended
DC Fast Charging Station PFC Stage
In DC fast-charging station modules delivering 50kW to 350kW, the UCC5880-Q1's 20A drive and reinforced isolation drive totem-pole PFC SiC stages that require fast switching and minimal dead-time loss. The 5000 Vrms isolation ensures safe isolation across the bridgeless PFC topology's high-side/low-side transitions, while integrated DESAT detection protects SiC MOSFETs during grid-side transients or load steps. Adjustable drive strength via serial interface enables tuning for the chosen SiC device's Qg, optimizing efficiency at partial load where many fast-charging systems spend most operating hours.
Recommended
Solar String Inverter Half-Bridge Stage
In three-phase solar string inverters, the UCC5880-Q1 drives SiC MOSFET half-bridge and full-bridge legs requiring 1500V PV-input isolation from the grid-connected side. The device's adjustable drive strength lets inverter designers optimize switching loss versus EMI compliance margins - critical for passing conducted-emissions tests without expensive filter stages. Combined with PTC/NTC over-temperature monitoring, the UCC5880-Q1 supports outdoor enclosure operation across wide temperature ranges, while the 5000 Vrms isolation rating satisfies IEC 62109 reinforced-insulation requirements for PV inverter safety compliance.
Recommended
Bidirectional EV DCDC Converter
For 400V to 800V bidirectional DCDC converters used in 800V-platform EVs, the UCC5880-Q1 drives both the high-side and low-side SiC MOSFETs of the dual-active-bridge (DAB) or resonant CLLC stages with 5000 Vrms isolation between primary and secondary sides. The 20A peak drive current supports the high-di/dt transitions characteristic of these high-power-density converters, while integrated DESAT and over-current protection trigger two-level soft turn-off to limit fault energy in low-impedance battery-fed faults. Functional-Safety-Compliant development simplifies ISO 26262 qualification of the entire V2X energy-transfer subsystem.
Recommended
Wireless EV Charging LCC Resonant Stage
In 11kW to 22kW wireless EV charging transmitters, the UCC5880-Q1 isolates and drives SiC MOSFETs in the LCC resonant inverter that energizes the primary coil at 85kHz. Galvanic isolation between the grid-tied controller and the high-voltage resonant tank is mandated by safety standards - the 5000 Vrms isolation rating of the UCC5880-Q1 satisfies IEC 61980 reinforced-insulation requirements. Adjustable drive strength is critical at 85kHz to fine-tune zero-voltage-switching (ZVS) behavior across the coil-coupling range, while integrated DESAT protection rapidly responds to detuning-induced hard-switching events that would otherwise stress the SiC devices.
Recommended
Recommended Products Summary
Engineering reference data for UCC5880-Q1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | UCC5881-Q1 |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Package | 32-SSOP (DFC) | 32-SSOP (DFC) - same |
| Maximum Drive Current | 20 A | 20 A |
| Isolation Rating | 5000 Vrms | 5000 Vrms |
| Isolation Type | Capacitive coupling | Capacitive coupling |
| Number of Channels | 2 | 2 |
| AEC-Q100 Qualified | Yes | Yes |
| Functional Safety | Functional Safety-Compliant | Functional Safety-Compliant |
| Target Transistors | SiC MOSFET / IGBT | SiC MOSFET / IGBT |
| Adjustable Drive Strength | Yes | Yes |
Key Differentiators
- 20A adjustable drive strength for SiC MOSFET gate drive (vs UCC5881-Q1)
- Functional Safety-Compliant development (vs Discrete optocoupler + buffer solutions)
- 5000 Vrms capacitive isolation in 32-SSOP (vs Magnetic-isolation gate drivers)
Design Notes
Always pair the UCC5880-Q1 with an isolated bias supply such as the TI LM5180-Q1 to provide the secondary-side VCC2/VEE2 rails; the device does not include an internal isolated DC-DC. Decoupling the secondary-side VCC2/VEE2 with 1uF X7R ceramic capacitors placed within 2mm of the IC pins prevents gate-driver latch-up under high dv/dt. Estimated: at 85 kHz PWM with 20A peak gate drive, total gate charge for a 1 nC-class SiC MOSFET creates peak bias currents near 100mA that the bias supply must source - undersized bias regulation causes VCC2 collapse and gate-drive droop.
Although the 32-SSOP package's thermal performance is acceptable for typical 20A pulsed gate drive (peak currents last microseconds), continuous high-repetition-rate operation can raise junction temperature. Estimated: at 100kHz with 20A peak and 100ns pulse width, average power dissipation in the output stage approaches 0.5W; this is well within SSOP ratings with proper PCB copper. Increase copper area on VCC2/VEE2 land patterns to spread heat and lower theta_JA, especially in traction-inverter designs where ambient temperatures exceed 85C.
Place the UCC5880-Q1 as close as physically possible to the SiC MOSFET or IGBT module to minimize gate-loop inductance; long gate traces cause ringing that may exceed the transistor's Vgs rating. Use a Kelvin source connection tied to the SL/SH pins to prevent ground-shift-induced false DESAT triggering during high di/dt. The DESAT pin's blanking capacitor must be sized to mask the Miller plateau duration; undersized blanking causes nuisance DESAT trips, while oversized blanking delays actual fault detection.
Route the primary-side PWMH/PWML lines away from the secondary-side gate-drive outputs to avoid capacitive coupling through the SSOP substrate; place a guard ground between them where possible. The PWM inputs typically accept 3.3V or 5V logic directly, simplifying interface to MCUs without level shifters. For noise-sensitive applications, add a small RC filter (~100 ohm, 100pF) on PWM inputs adjacent to the IC to slow fast transients from long MCU traces.
Compliance Information
AEC-Q100 qualified and Functional Safety-Compliant per TI datasheet SLUSF39A. RoHS compliant per TI product page. Halogen-free status and conflict-mineral declarations not explicitly stated in provided data - set to unknown per data-authenticity rules.
