BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
N.º da peça: BSC019N04LSTATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.18 | $21,80 |
| 100 | $1.85 | $185,00 |
| 500 | $1.62 | $810,00 |
| 1.000 | $1.42 | $1.420,00 |
| 5.000 | $1.21 | $6.050,00 |
BSC019N04LSTATMA1 Visão geral
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel MOSFETs such as the BSC019N04LSTATMA1 are the workhorses of modern synchronous buck converters, where two MOSFETs (a control FET and a sync FET) alternate to step down a higher DC rail to a lower voltage. OptiMOS 5 is Infineon's fifth-generation 40 V trench MOSFET platform, designed to deliver the industry's lowest Figure of Merit (FOM = RDS(on) x Qg) at this voltage class for highest efficiency at high switching frequencies.
Key features include 1.9 mOhm maximum RDS(on) at VGS = 10 V, a 40 V VDS rating that provides ample margin above nominal 12 V or 24 V rails, and avalanche-rated ruggedness with a 94 W power dissipation capability (Tc). The logic-level-compatible gate threshold (typ. 1.7 V) allows direct drive from standard 3.3 V or 5 V PWM controllers, eliminating the need for a gate-driver bootstrap in some low-side topologies. The SuperSO8 footprint also offers an exposed thermal pad with theta_JA in the low-40s C/W range, enabling compact designs without a discrete heatsink at moderate loads.
Typical applications include synchronous rectification on the secondary side of isolated DC-DC bricks, point-of-load (POL) buck converters in telecom and server motherboards, hot-swap and OR-ing controllers, and low-side switches for motor-control H-bridges. At 12 V input the part can deliver tens of amps continuously with negligible conduction loss.
When designing with this device, pay close attention to gate-drive voltage and dv/dt. Although logic-level compatible, a 10 V drive maximizes RDS(on) margin; at 4.5 V the on-resistance roughly doubles. Always place the gate resistor and local bypass capacitor within 5 mm of the gate pin to suppress parasitic turn-on.
This page synthesizes distributor pricing, drop-in OptiMOS 5 and competitive alternatives, and practical layout notes not found in the manufacturer datasheet alone.
Alternativas drop-in para BSC019N04LSTATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com BSC019N04LSTATMA1 (mesmo formato e footprint) — diferindo em Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
BSC019N04LS
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
BSC028N06NSTATMA1
✅ Drop-In✓ Em estoque
$0.4 / unidade
Ver ficha técnica →BSC014NE2LSIATMA1
✅ Drop-In✓ Em estoque
$0.48 / unidade
Ver ficha técnica →BSC0921NDIATMA1
✅ Drop-In✓ Em estoque
$0.68 / unidade
Ver ficha técnica →ISC015N06NM5ATMA1
✅ Drop-In✓ Em estoque
$0.62 / unidade
Ver ficha técnica →NTMFS4C03N
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSC019N04LSTATMA1 Classificações máximas e características elétricas
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A |
| Continuous Drain Current (ID, Ta=25C) | 28 A |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | 1.7 V |
| Total Gate Charge Qg typ | 85 nC |
| Power Dissipation PD (Tc=25C) | 94 W |
| Faixa de temperatura de operação | -55 C to +150 C |
| Encapsulamento | TDSON-8 (SuperSO8) 5x6 mm |
| Tipo de montagem | Surface Mount |
| Nível MSL | 1 (unlimited) |
| Status RoHS | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| Avalanche Rated | Yes |
Configuração de pinos do BSC019N04LSTATMA1
| Pino 1 | Source — Source terminal (connected to pins 1-3 internally) |
| Pino 2 | Source — Source terminal |
| Pino 3 | Source — Source terminal |
| Pino 4 | Gate — Gate drive input |
| Pino 5 | Drain — Drain terminal (exposed pad beneath package) |
| Pino 6 | Drain — Drain terminal (exposed pad area) |
| Pino 7 | Source — Source terminal |
| Pino 8 | Source — Source terminal |
Área de Operação Segura (DC, Tc=25C)
Aplicações típicas
BSC019N04LSTATMA1 é adequado para 6 aplicaçãos: Synchronous Rectification in 12 V Buck Converters, Server and Telecom DC-DC Brick Converters, Hot-Swap and OR-ing Controllers, Low-Side Switch in Motor Drive H-Bridges, Battery Management and Protection FETs, USB-PD and Fast-Charge Power Stages.
Synchronous Rectification in 12 V Buck Converters
BSC019N04LSTATMA1 serves as the low-side sync FET in 12 V-to-1.x V point-of-load buck converters where its 1.9 mOhm RDS(on) at 10 V VGS minimizes conduction loss at high output currents. The 85 nC typical gate charge keeps switching loss low at 300-500 kHz, supporting > 95 % peak efficiency in 25-40 A server POL designs. Compared with a Schottky diode the MOSFET halves rectifier loss but requires careful dead-time control to prevent shoot-through. Source: Infineon OptiMOS 5 datasheet typical application circuit.
Recomendado
Server and Telecom DC-DC Brick Converters
In isolated 48 V-to-12 V intermediate bus converters and 12 V-to-1 V VRM stages, BSC019N04LSTATMA1 provides the low-side switch in synchronous-rectified full-bridge or hard-switched buck topologies. The 40 V VDS gives safe margin above 12 V outputs with inductive ringing, and the 161 A pulsed rating handles transient load steps typical in server CPU power delivery. The TDSON-8 footprint enables a compact 25 A/inch^2 power-density layout. Source: Infineon OptiMOS 5 product family reference designs.
Recomendado
Hot-Swap and OR-ing Controllers
BSC019N04LSTATMA1 is well suited as the pass element in 12 V hot-swap and OR-ing controllers where its low RDS(on) limits steady-state I^2R dissipation and its 94 W power rating absorbs inrush transients. The logic-level-compatible threshold allows direct PWM control for inrush current profiling. Use a TVS or snubber to clamp inductive transients during connector mating. Recommended for -48 V telecom distribution and 12 V server backplanes.
Recomendado
Low-Side Switch in Motor Drive H-Bridges
BSC019N04LSTATMA1 functions as the low-side FET in 12-24 V brushed-DC and small BLDC motor H-bridges for robotics, e-mobility, and industrial automation. Its 1.9 mOhm RDS(on) minimizes conduction loss during PWM at 20-50 kHz, and the 40 V VDS tolerates inductive flyback when paired with a flyback diode. Use the IR2104STRPBF half-bridge driver for safe gate control. Avoid continuous operation above 50 A without active cooling.
Recomendado
Battery Management and Protection FETs
In 4S-6S Li-ion battery packs (nominal 14.4-21.6 V), BSC019N04LSTATMA1 acts as the discharge or charge protection FET where its 40 V VDS provides margin above the fully-charged 25.2 V stack and its 1.9 mOhm RDS(on) minimizes loss during continuous 20-30 A discharge. The exposed-pad TDSON-8 enables direct PCB heatsinking for thermal management. Pair with a battery monitor such as the TLE9015 for cell balancing and overcurrent protection.
Recomendado
USB-PD and Fast-Charge Power Stages
BSC019N04LSTATMA1 supports the synchronous buck stage of USB Power Delivery 3.1 chargers delivering 100-140 W at 20 V output. Its 40 V VDS handles USB-PD Extended Power Range (EPR) outputs to 28 V, and 1.9 mOhm RDS(on) keeps full-load efficiency above 96 %. The TDSON-8 footprint supports compact 1-2 cu-in charger designs. Use a digital PFC + LLC front end and the BSC019N04LSTATMA1 in the secondary-side sync-rectifier position.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para BSC019N04LSTATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | BSC028N06NSTATMA1 | BSC0921NDIATMA1 | ISC015N06NM5ATMA1 | NTMFS4C03N |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | TDSON-8 (SuperSO8) 5x6 mm | TDSON-8 (SuperSO8) 5x6 mm - same | TDSON-8 (SuperSO8) 5x6 mm - same | TDSON-8 (SuperSO8) 5x6 mm - same | TDSON-8 (SO-8FL) 5x6 mm - same |
| Drain-Source Voltage VDS max | 40 V | 60 V | 25 V | 60 V | 40 V |
| On-Resistance RDS(on) max @ 10V | 1.9 mOhm | 2.8 mOhm | 9.2 mOhm | 1.5 mOhm | 2.0 mOhm |
| Continuous Drain Current (Tc=25C) | 161 A | 100 A | 48 A | 176 A | 140 A |
| Power Dissipation PD (Tc=25C) | 94 W | 78 W | 44 W | 104 W | 83 W |
| Gate Threshold VGS(th) typ | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.6 V |
| Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi PowerTrench |
| Approx Unit Price @ 1000 (USD, as of 2026-09-14) | $1.42 | $1.25 | $0.95 | $1.55 | $1.30 |
Principais diferenciais
- Industry-leading FOM at 40 V in TDSON-8 (vs BSC0921NDIATMA1)
- Higher VDS rating than 25 V Infineon alternatives (vs BSC014NE2LSIATMA1)
- Cross-brand footprint compatibility with onsemi SO-8FL parts (vs NTMFS4C03N)
Notas de projeto
Estimated: At continuous 30 A with RDS(on) = 1.9 mOhm, conduction loss is I^2 * R = 30^2 * 0.0019 = 1.71 W. The TDSON-8 with 1 oz copper on a 2-layer board has theta_JA roughly 50 C/W (per JEDEC EIA/JESD51), giving a 86 C temperature rise above ambient. At 30 C ambient the junction reaches 116 C - within the 150 C rating but with limited margin. Use 4-layer board with 2 oz copper on top side or a small heatsink pad for > 20 A continuous operation.
Place the gate-drive loop (gate resistor, gate driver output, and FET gate) within 5 mm of the gate pin to minimize parasitic inductance. The source connection (pins 1-3, 7-8) must be a continuous copper pour to the ground plane, with at least 4 vias stitching the top-side source copper to internal ground planes. The exposed drain pad (pin 5-6) needs a thermal via array (typically 9-16 vias in a 3x3 to 4x4 pattern) to spread heat into the inner copper layers.
Do not drive BSC019N04LSTATMA1 directly from a 3.3 V microcontroller GPIO. Although VGS(th) is 1.7 V, at 3.3 V VGS the RDS(on) doubles to ~3.8 mOhm, doubling conduction loss and risking thermal runaway at high current. Use a dedicated gate driver such as Infineon 1EDN71x or 2ED2106S06F that supplies 8-10 V to the gate. Also, do not exceed 40 V VDS - inductive kickback in motor/relay applications commonly spikes above 30 V and requires a TVS clamp.
Informações de conformidade
RoHS and REACH compliant per Infineon product declaration. Lead-free reflow-compatible (MSL1, 245 C peak per JEDEC J-STD-020). Not AEC-Q100 qualified; for automotive designs use Infineon's automotive-grade OptiMOS part with -Q suffix.
