BSC021N08NS5ATMA1 vs BSC030N08NS5ATMA1 Comparação
Comparação detalhada lado a lado de BSC021N08NS5ATMA1 por Infineon e BSC030N08NS5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSC021N08NS5ATMA1 | BSC030N08NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,81 | $0,55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC021N08NS5ATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 5 |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tc=25°C) | 226 A | — |
| Continuous Drain Current (I_D, Tc=100°C) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΩ | — |
| Gate-Source Voltage V_GS max | ±20 V | — |
| Power Dissipation P_D (Tc=25°C) | 214 W | — |
| Temperatura de junção de operação | -55 °C to +175 °C | — |
| Encapsulamento | SuperSO8 5x6 (PG-TSON-8-3) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | — |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | — |
| Status RoHS | Compliant (Pb-free) | Compliant |
| Nível MSL | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Delivery Form | Tape & Reel (T&R) | — |
| Product Type | — | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (ID,pulse) | — | 161 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| RDS(on) max at VGS=10 V | — | 3.0 mOhm |
| RDS(on) max at VGS=7 V | — | [DATA_NEEDED: RDS(on) at VGS=7V] |
| Power Dissipation (Ta=25C, 1.5mm FR4) | — | 2.5 W |
| Power Dissipation (TC=25C) | — | 139 W |
| Operating Temperature Range (TJ) | — | -55C to +150C |
| Livre de halogênio | — | Yes |
| Lead-Free | — | Yes |
| Gate Drive Logic | — | Standard 10V, compatible with 12V drive |
| Optimized Application | — | Synchronous Rectification |