BSC021N08NS5ATMA1 vs BSC030N08NS5ATMA1 비교

다음의 상세 나란히 비교: BSC021N08NS5ATMA1 제조: Infineon 및 BSC030N08NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ 활성

사양 비교

파라미터 BSC021N08NS5ATMA1 BSC030N08NS5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.81 $0.55
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC021N08NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench) OptiMOS 5
Drain-Source Voltage (V_DS max) 80 V —
Continuous Drain Current (I_D, Tc=25°C) 226 A —
Continuous Drain Current (I_D, Tc=100°C) 100 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max (V_GS=10 V) 2.1 mΩ —
Gate-Source Voltage V_GS max ±20 V —
Power Dissipation P_D (Tc=25°C) 214 W —
동작 접합 온도 -55 °C to +175 °C —
패키지 SuperSO8 5x6 (PG-TSON-8-3) PG-TDSON-8-7 (SuperSO8 5x6 mm)
실장 유형 Surface Mount Surface Mount
Total Gate Charge Q_G typ [DATA_NEEDED: total gate charge] —
R_thJC thermal resistance max [DATA_NEEDED: R_thJC] —
RoHS 상태 Compliant (Pb-free) Compliant
MSL 레벨 MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Avalanche Energy Rated Yes (single-pulse) —
Delivery Form Tape & Reel (T&R) —
Product Type — N-Channel Power MOSFET
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (ID,pulse) — 161 A
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max at VGS=10 V — 3.0 mOhm
RDS(on) max at VGS=7 V — [DATA_NEEDED: RDS(on) at VGS=7V]
Power Dissipation (Ta=25C, 1.5mm FR4) — 2.5 W
Power Dissipation (TC=25C) — 139 W
Operating Temperature Range (TJ) — -55C to +150C
할로겐 프리 — Yes
Lead-Free — Yes
Gate Drive Logic — Standard 10V, compatible with 12V drive
Optimized Application — Synchronous Rectification

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