BSC097N06NSATMA1 vs BSZ017NE2LS5IATMA1 Comparação
Comparação detalhada lado a lado de BSC097N06NSATMA1 por Infineon e BSZ017NE2LS5IATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSC097N06NSATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,38 | $0,64 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | — |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| Temperatura de junção de operação | -55C to +150C | -55°C to +150°C |
| Encapsulamento / Caixa | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 (Unlimited) | — |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (TA) | — | 27 A |
| Continuous Drain Current (TC) | — | 40 A |
| On-Resistance RDS(on) @ VGS=10V | — | 1.7 mΩ |
| On-Resistance Test Current | — | 20 A |
| Gate-Source Voltage (VGS) Rating | — | ±16 V |
| Gate Threshold Voltage VGS(th) | — | 2 V @ 250 µA |
| Total Gate Charge Qg | — | 30 nC @ VGS=10V |
| Input Capacitance Ciss | — | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 50 W |
| Encapsulamento | — | PG-TSDSON-8-FL (8-PowerTDFN) |
| Series / Family | — | OptiMOS 5 25V |